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Diodes Incorporated SDMG0340LS-7
- Part No.:
- SDMG0340LS-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
SDMG0340LS-7.pdf
- Description:
- DIODE ARR SCHOTT 40V 30MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:7,028
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Product details
Overview
SDMG0340LS-7 from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT-323 package, rated for 40 V peak repetitive reverse voltage, 30 mA forward current, and 295–370 mV forward voltage at 1.0 mA, used in low-power signal rectification and ESD-protected bias networks.
For engineers reviewing the SDMG0340LS-7 datasheet, SDMG0340LS-7 pinout, SDMG0340LS-7 application, or SDMG0340LS-7 equivalent, key selection factors include its ultra-low VF, 2.0 pF junction capacitance at 1 V, 150–1000 nA leakage at 10 V, PN guard ring for transient immunity, and RoHS-compliant matte tin plating on Alloy 42 leadframe.
Technical Context
This Schottky diode employs a planar epitaxial construction with a PN junction guard ring to suppress edge breakdown and improve ESD robustness (per IEC 61000-4-2). Its low forward voltage enables efficient operation in space-constrained, battery-powered signal paths where power loss must be minimized.
The device exhibits fast switching behavior with typical reverse recovery time under 10 ns at IF = 10 mA, and thermal resistance of 625°C/W when mounted per AP02001 pad layout-making it suitable for high-frequency detector, clamp, and level-shift circuits operating from –40°C to +125°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum reverse voltage before breakdown; defines safe blocking range in signal clamping or DC bias isolation. |
| VF @ 1.0 mA | 295–370 mV - Low conduction loss enables minimal voltage drop in low-current sensing and logic-level translation. |
| IR @ 10 V | 150–1000 nA - Ultra-low leakage preserves signal integrity in high-impedance analog nodes and precision reference paths. |
| CT @ 1 V, 1 MHz | 2.0 pF - Minimal junction capacitance supports >100 MHz RF detection and high-speed digital signal conditioning. |
| RθJA | 625 °C/W - Thermal performance validated on FR-4 PCB per AP02001 layout; limits usable power to ~200 mW at TA = 25°C. |
| IFM | 30 mA - Continuous forward current rating; sets maximum steady-state load for biasing, LED drive, or sensor interface circuits. |
Pinout & Package
Package: SOT-323 - ultra-small plastic surface-mount case (2.10 × 1.30 × 0.95 mm), UL 94V-0 rated, moisture sensitivity Level 1, lead-free matte tin finish over Alloy 42 leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to higher-potential node in rectification or clamping; requires trace routing compatible with 30 mA continuous current. |
| Cathode (Pin 2) | Forward current exit / reverse-blocking terminal | Typically tied to ground or reference rail; serves as ESD discharge path via guard ring structure. |
| Collector / Case (Pin 3) | Non-functional internal tie / mechanical support | Internally unconnected; provides mechanical stability but no electrical role-no PCB connection required. |
Key Features
| Feature | Design Value |
|---|---|
| PN junction guard ring | Enhances transient voltage immunity and ESD tolerance without external protection components. |
| Ultra-low VF (295–370 mV) | Reduces forward conduction loss by >40% vs. standard silicon diodes at 1 mA, critical for micro-power sensor interfaces. |
| SOT-323 footprint | Enables placement in <1.5 mm² board area-ideal for wearables, hearing aids, and miniaturized IoT endpoints. |
| Lead-free & "Green" compound | Complies with RoHS Directive 2011/65/EU and halogen-free requirements (Br < 900 ppm, Cl < 900 ppm). |
Applications
| RF Signal Detector | Low-Power Sensor Bias |
|---|---|
Use Scenario: Demodulating AM signals in sub-GHz ISM band receivers (e.g., 315/433 MHz remote sensors). IC Role / Device Role: Passive envelope detector diode converting RF carrier amplitude to baseband voltage. Use Value: 2.0 pF CT and <10 ns trr preserve signal fidelity up to 500 MHz; low VF ensures detectable output even at –20 dBm input. | Use Scenario: Providing stable bias current to MEMS microphone or thermistor in battery-operated environmental monitors. IC Role / Device Role: Precision current source element in high-impedance bias network with series resistor. Use Value: 150–1000 nA IR prevents loading of µA-level sensor currents; guard ring suppresses noise coupling from PCB transients. |
| ESD-Protected Logic Clamp | USB Data Line Protection |
Use Scenario: Protecting GPIO pins of microcontrollers against ±8 kV contact ESD per IEC 61000-4-2 in industrial control panels. IC Role / Device Role: Low-capacitance shunt clamp between I/O line and ground. Use Value: Guard ring structure sustains repeated ESD strikes without parameter shift; 2.0 pF CT avoids signal integrity degradation on 10 Mbps digital lines. | Use Scenario: Safeguarding D+ and D− lines of USB 2.0 full-speed (12 Mbps) interfaces in portable medical devices. IC Role / Device Role: Bidirectional transient voltage suppressor placed inline with data traces. Use Value: Sub-10 ns response time and 40 V VRRM allow clamping below USB PHY damage threshold while maintaining eye diagram compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C-7-F | Higher VF (320–420 mV @ 10 mA); same SOT-323 package; dual common-cathode configuration. | Designed for dual-channel clamping; not single-diode optimized for ultra-low-current bias. | Select when dual-diode topology or higher surge rating (IFSM = 600 mA) is required. |
| NSR0330P2T5G | Lower VF (270–330 mV @ 10 mA); SOD-523 (smaller) package; no guard ring. | Lacks integrated ESD protection; requires external TVS for IEC 61000-4-2 compliance. | Select only in space-constrained designs where external ESD protection is already implemented. |
Compared with BAT54C-7-F and NSR0330P2T5G, SDMG0340LS-7 uniquely combines guard-ring-enhanced ESD robustness, ultra-low leakage (<1 µA), and SOT-323 compatibility-making it optimal for single-diode, high-reliability, low-current signal conditioning where board area and transient immunity are jointly constrained.
Availability
SDMG0340LS-7 is available at Aetrix Electronics and suitable for RF detection, sensor biasing, ESD-clamped I/O protection, and USB data line safeguarding requiring stable component supply across production lifecycles.
Supply support for SDMG0340LS-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
The SDMG0340LS-7 belongs to Diodes' precision Schottky diode product line, engineered specifically for ultra-low-power, high-reliability signal-path applications in portable and industrial electronics where leakage, capacitance, and ESD resilience are critical.
FAQ
What is the maximum ambient temperature for continuous operation of SDMG0340LS-7?
The SDMG0340LS-7 is rated for continuous operation from –40°C to +125°C ambient temperature. Its 625°C/W thermal resistance requires derating above 25°C: at 85°C TA, maximum allowable power drops to 120 mW per the derating curve in Figure 5 of DS30248 Rev. 12–2.
Does SDMG0340LS-7 have a built-in ESD protection structure?
Yes-SDMG0340LS-7 integrates a PN junction guard ring that improves transient immunity and provides inherent ESD robustness. While not rated to a specific IEC 61000-4-2 level in the datasheet, this structure significantly enhances survivability against electrostatic discharge compared to non-guarded Schottky diodes.
Can SDMG0340LS-7 be used in place of a standard 1N4148 in signal switching applications?
No-SDMG0340LS-7 is a Schottky diode with 40 V VRRM and no reverse recovery charge, whereas 1N4148 is a silicon switching diode rated for 100 V and exhibits minority-carrier storage. Substitution may cause premature breakdown in 75–100 V circuits or fail to meet reverse recovery timing in high-speed logic clamps.
Is the SOT-323 package of SDMG0340LS-7 compatible with standard reflow profiles?
Yes-the SOT-323 package is qualified for lead-free reflow per J-STD-020D Level 1 moisture sensitivity. It supports peak temperatures up to 260°C and is compatible with standard Pb-free reflow profiles when using recommended pad layout AP02001 and stencil thickness ≤0.12 mm.
SDMG0340LS-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 30mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 370 mV @ 1 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 µA @ 10 V
- Operating Temperature - Junction:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
SDMG0340LS-7 FAQ
1.How can I place an order for SDMG0340LS-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for SDMG0340LS-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDMG0340LS-7 reliable?
The price and inventory of SDMG0340LS-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDMG0340LS-7 is usually 5 days.
3.What payment methods are accepted for SDMG0340LS-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDMG0340LS-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDMG0340LS-7?
SDMG0340LS-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDMG0340LS-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDMG0340LS-7?
For technical support, including SDMG0340LS-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDMG0340LS-7 requirements.
6.How does Aetrix verify that SDMG0340LS-7 is sourced from the original manufacturer or authorized distributors?
All SDMG0340LS-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDMG0340LS-7 meets industry standards.
7.What is the process for return or replacement of SDMG0340LS-7?
All SDMG0340LS-7 units undergo pre-shipment inspection (PSI). If there is an issue with SDMG0340LS-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDMG0340LS-7 part is unused and in its original packaging.
Return procedure for SDMG0340LS-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SDMG0340LS-7 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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