Infineon Technologies SDP20S30

Overview

SDP20S30 from Infineon Technologies is a dual-leg silicon carbide (SiC) Schottky diode in P-TO220-3 package, rated for 300 V repetitive peak reverse voltage and 10 A continuous forward current per leg, with zero reverse recovery charge (Q_c = 23 nC), enabling high-frequency, high-efficiency PFC and DC-DC stages in industrial SMPS.

For engineers reviewing the SDP20S30 datasheet, SDP20S30 pinout, SDP20S30 application, or SDP20S30 equivalent, key selection criteria include its SiC-based zero-recovery switching, thermal stability up to 175 °C junction temperature, low 1.5–1.9 V forward voltage at 10 A, and 2.3 K/W junction-to-case thermal resistance - critical for compact, air-cooled power converters.

Technical Context

This dual-leg SiC Schottky diode operates without minority-carrier storage, eliminating reverse recovery time (t_rr = n.a.) and associated switching losses across temperature. Its capacitive charge (Q_c = 23 nC at 200 V, 150 °C) and low capacitance (40 pF at 300 V) enable fast, predictable turn-off under high di/dt conditions.

The device uses a planar SiC junction structure with metal–semiconductor contact, delivering stable forward voltage (V_F = 1.5 V typ. @ 10 A, 25 °C; 1.7 V @ 10 A, 150 °C) and reverse leakage (I_R = 20 µA max @ 300 V, 25 °C; 1000 µA @ 300 V, 150 °C), independent of switching frequency or thermal cycling.

Key Specifications

Pinout & Package

P-TO220-3 package with isolated mounting tab (pin 1 = anode leg 1, pin 2 = cathode common, pin 3 = anode leg 2); thermally enhanced plastic housing rated for 175 °C operating temperature and 2.3 K/W junction-to-case thermal resistance per diode leg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065A and SS12030, SDP20S30 uniquely delivers matched 300 V/10 A dual-leg performance in P-TO220-3 with industry-leading Q_c and thermal resistance - ideal for space-constrained, high-frequency PFC where dual-leg symmetry and thermal uniformity are critical.

Availability

SDP20S30 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, solar inverters, and EV onboard chargers requiring stable component supply, long-lifecycle availability, and traceable sourcing for production programs.

Supply support for SDP20S30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride power devices.

The SDP20S30 belongs to Infineon's thinQ!® SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial and renewable energy systems where zero-recovery behavior and thermal robustness are mandatory.

FAQ

What is the maximum junction temperature and how does it affect reliability?

The SDP20S30 has a rated junction temperature range of −55 °C to +175 °C. Operation at 175 °C is fully specified - forward voltage, leakage current, and Q_c are characterized up to this limit. Lifetime testing shows >100,000 hours MTTF at 150 °C junction under rated current, with no degradation mechanism acceleration beyond silicon limits.

Can SDP20S30 be used in place of a standard silicon diode without circuit redesign?

Yes - the SDP20S30 is a direct drop-in replacement for TO-220 silicon diodes in terms of footprint and pinout. However, its zero-recovery behavior eliminates snubber networks and reduces EMI filter requirements. Gate drive timing for synchronous FETs may need minor adjustment due to absence of reverse recovery tail current.

How is the dual-leg configuration wired in a bridge rectifier?

In a single-phase bridge, pins 1 and 3 serve as the two AC inputs (anodes), while pin 2 (common cathode) connects to the positive DC rail. The negative rail connects to the heatsink or chassis ground. Each leg conducts independently during alternate half-cycles, sharing thermal mass but electrically isolated.

What is the significance of Q_c = 23 nC in system-level design?

Q_c quantifies the stored charge that must be removed during turn-off. At 23 nC, the SDP20S30 reduces turn-off loss by ~70% versus a comparable silicon diode (Q_rr ≈ 75 nC). This directly lowers MOSFET/IGBT gate driver stress, reduces heat sink size by up to 30%, and enables higher switching frequencies without efficiency penalty.