Diodes Incorporated SDT10A100P5-13

Overview

SDT10A100P5 from Diodes Incorporated is a 10A, 100V trench Schottky barrier rectifier in PowerDI5 package, featuring VF ≤ 0.68 V at 10 A and 25°C, IR ≤ 100 µA at 100 V and 25°C, and TJ up to +150°C - deployed as freewheel or output rectifier in high-efficiency DC-DC converters and AC-DC adapters.

For engineers reviewing the SDT10A100P5 datasheet, SDT10A100P5 pinout, SDT10A100P5 application, or SDT10A100P5 equivalent, key selection criteria include forward voltage drop at full load, reverse leakage stability at elevated junction temperature, thermal resistance (RθJC = 3°C/W on 2″×2″ Al board), and PowerDI5 footprint compatibility with high-density PCB layouts.

Technical Context

This Schottky rectifier uses trench MOS structure to achieve low VF and soft switching behavior, minimizing EMI in high-frequency switching topologies. Its RθJC of 3°C/W enables high power dissipation in compact form factor, while stable IR <20 µA at 125°C supports reliable operation in thermally constrained environments.

The device exhibits VF = 0.64 V at 10 A and 125°C, confirming low conduction loss under real operating conditions. Junction capacitance CT = ~1000 pF at VR = 0 V (f = 1 MHz) and decreases to ~100 pF at VR = 50 V, supporting fast transient response in synchronous rectification and flyback snubber circuits.

Key Specifications

Pinout & Package

SDT10A100P5 is housed in PowerDI5 package: compact surface-mount outline with integrated thermal pad, molded green compound (UL 94V-0), and matte tin–annealed copper leadframe. Cathode terminal is electrically and thermally connected to the exposed bottom pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-10BQ100-M3/5BT and SB10100, SDT10A100P5 delivers lowest VF and best thermal performance in PowerDI5, making it optimal for space-constrained, high-efficiency DC-DC and adapter designs where junction temperature must stay below 130°C under full load.

Availability

SDT10A100P5 is available at Aetrix Electronics and suitable for DC-DC converters, AC-DC adapters, and industrial power supplies requiring stable component supply, consistent thermal performance, and RoHS-compliant green packaging.

Supply support for SDT10A100P5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for power management and signal integrity.

SDT10A100P5 belongs to Diodes' PowerDI® trench Schottky rectifier product line, engineered specifically for high-frequency, high-efficiency switching power supplies where low VF, soft recovery, and thermal robustness are essential.

FAQ

What is the maximum allowable case temperature for continuous 10 A operation?

Per Figure 4, SDT10A100P5 supports 10 A average output current up to TC = 110°C. At TC = 110°C, junction temperature remains within the +150°C limit assuming RθJC = 3°C/W - verified on 2″×2″ aluminum board per datasheet Note 7.

Is the PowerDI5 package lead-free and RoHS compliant?

Yes - SDT10A100P5 features matte tin–annealed terminals and green molding compound meeting RoHS 3 (2015/863/EU), with bromine/chlorine <900 ppm each and antimony <1000 ppm, certified per Diodes Incorporated's "Green" definition.

How does the device perform at elevated temperature?

VF drops to 0.64 V at 10 A and 125°C, while IR rises only to 20 µA at 100 V and 125°C - confirming stable conduction and blocking behavior across its full operating range, unlike conventional Schottky diodes that suffer rapid IR increase above 100°C.

Can SDT10A100P5 replace a standard silicon rectifier in an existing design?

Yes, provided the circuit operates below 100 V reverse bias and layout accommodates PowerDI5 footprint. Its lower VF reduces conduction loss and heat generation, but note: no reverse recovery time specification applies - Schottky devices have no minority-carrier storage, eliminating Qrr-related losses entirely.