Diodes Incorporated SDT40A60VCT

Overview

SDT40A60VCT from Diodes Incorporated is a 60 V, 40 A dual common-cathode Trench Schottky rectifier in TO220AB package, delivering 0.52 V forward voltage at 20 A and 25 °C, with 0.2 mA max reverse leakage at 60 V and 25 °C - optimized for high-efficiency DC-DC converters and AC-DC adapters.

For engineers reviewing the SDT40A60VCT datasheet, SDT40A60VCT pinout, SDT40A60VCT application, or SDT40A60VCT equivalent, key selection criteria include low VF stability across temperature, soft switching behavior, thermal resistance (RθJC = 2 °C/W), and RoHS-compliant matte tin terminations on copper leadframe.

Technical Context

This dual-leg Schottky rectifier integrates two independent 20 A per-leg diodes sharing a common cathode terminal, enabling synchronous rectification or dual-output DC-DC topologies. Its Trench MOS structure achieves lower VF and superior IR stability versus planar Schottky devices.

Thermal performance is defined by junction-to-case resistance of 2 °C/W (TO220AB), supporting continuous 40 A total output when mounted on a 2"×2" Al board with heatsink. Reverse recovery is inherently negligible due to majority-carrier conduction, eliminating switching losses in high-frequency operation.

Key Specifications

Pinout & Package

Package: TO220AB (Generic), molded plastic case with UL 94V-0 flammability rating; matte tin-plated copper leadframe; weight ≈1.85 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-40CPH06-M3 and MBR4060CT, SDT40A60VCT delivers the lowest VF and best high-temperature IR stability among TO220AB-packaged 60 V dual Schottky rectifiers, making it optimal for space- and thermal-constrained 48 V intermediate bus converters.

Availability

SDT40A60VCT is available at Aetrix Electronics and suitable for DC-DC converters, AC-DC adapters, and telecom power modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SDT40A60VCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Trench Schottky Rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial power supplies where low VF and thermal robustness are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The SDT40A60VCT supports continuous operation from –55 °C to +150 °C junction temperature. At rated 40 A total current and 2 °C/W RθJC, maintaining TJ ≤ 150 °C requires case temperature ≤ 70 °C with adequate heatsinking - verified per Figure 4 derating curve in DS41874 Rev. 3-2.

Is SDT40A60VCT suitable for surface-mount assembly?

No - SDT40A60VCT uses the through-hole TO220AB package with three leads designed for wave or hand soldering into plated-through holes. It is not compatible with reflow SMT processes due to thermal mass and leadform geometry; the ITO220AB variant (SDT40A60VCTFP) remains through-hole.

How does its soft switching behavior improve EMI performance?

As a majority-carrier Schottky device, SDT40A60VCT exhibits zero reverse recovery charge (Qrr), eliminating high di/dt-induced voltage spikes during turn-off. This removes a primary source of broadband conducted EMI, reducing filtering component count and easing compliance with EN 55032 Class B limits in compact power supplies.

Can it replace a single 40 A standard silicon rectifier in existing designs?

Yes - with identical TO220AB footprint and pinout, SDT40A60VCT provides lower VF (0.52 V vs. typical 0.9–1.1 V), reduced thermal rise, and faster switching. However, designers must verify that reverse voltage transients remain below 60 V, as Schottky devices have lower VRRM than equivalent Si rectifiers.