Diodes Incorporated SDT4U40EP3-7B

Overview

SDT4U40EP3-7B from Diodes Incorporated is a 40 V, 4.0 A trench Schottky barrier rectifier in a chip-scale package (X3-TSN1608-2), featuring 0.45 V typical forward voltage at 2.0 A, 150 µA max reverse leakage at 40 V, and 55 °C/W junction-to-ambient thermal resistance on 1-inch² copper pad. It serves as a low-loss blocking or reverse protection diode in space-constrained portable power rails.

For engineers reviewing the SDT4U40EP3-7B datasheet, SDT4U40EP3-7B pinout, SDT4U40EP3-7B application, or SDT4U40EP3-7B equivalent, key selection criteria include forward voltage drop at rated current, high-temperature leakage behavior, thermal resistance under defined PCB layout, and CSP solderability with NiAu bumps.

Technical Context

This Schottky rectifier uses trench MOS structure to reduce series resistance and enhance carrier injection efficiency, enabling lower VF than planar Schottky counterparts. Its 40 V VRRM rating targets 5 V–12 V input systems where fast switching and minimal conduction loss are critical.

The X3-TSN1608-2 package integrates bare-die silicon with NiAu solder bumps and electrically active side walls-requiring strict avoidance of solder/flux contact during reflow. Polarity is marked by cathode dot adjacent to Pin 1.

Key Specifications

Pinout & Package

Package: X3-TSN1608-2 - Chip-scale package with 2-terminal NiAu bump configuration, 1.60 mm × 0.80 mm footprint, 0.25 mm nominal height, and cathode dot marking. Side walls are electrically active bare silicon; flux/solder contact must be avoided.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SBM4040CT-13 and PSMN2R0-40YLC, SDT4U40EP3-7B delivers lowest system-level cost and smallest footprint for fixed-VF Schottky applications where 0.45 V conduction loss and 1.28 mm² area are decisive constraints.

Availability

SDT4U40EP3-7B is available at Aetrix Electronics and suitable for USB Power Delivery input protection, wireless charging transmit stages, wearable battery management, and industrial sensor node power path applications requiring stable component supply and long-term lifecycle support.

Supply support for SDT4U40EP3-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SDT4U40EP3 belongs to Diodes' Trench Schottky Rectifier product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and reverse protection in portable and battery-powered systems.

FAQ

What is the maximum operating temperature for SDT4U40EP3-7B?

The SDT4U40EP3-7B has an operating junction temperature range of –55°C to +150°C. At 4.0 A average current, thermal design must ensure TJ does not exceed 150°C-achievable with 55 °C/W RθJA on 1-inch² copper pad up to +105°C ambient. Derating applies above that ambient temperature.

Is SDT4U40EP3-7B suitable for automotive applications?

SDT4U40EP3-7B is not AEC-Q101 qualified. While its –55°C to +150°C operating range meets automotive ambient requirements, it lacks PPAP documentation, IATF 16949 manufacturing certification, and stress-test validation required for automotive use. Diodes offers AEC-Q101 variants under separate part numbers.

How should the electrically active side walls of X3-TSN1608-2 be handled during PCB assembly?

The side walls of the X3-TSN1608-2 package are bare silicon and electrically active. During stencil printing and reflow, solder paste and flux must not contact these surfaces-use precise aperture design and controlled placement to avoid bridging. Refer to Diodes' recommended pad layout (X2 = 1.622 mm, Y = 0.690 mm) to maintain clearance.

Does SDT4U40EP3-7B require a heatsink?

No external heatsink is required. With RθJA = 55 °C/W on a 1-inch² 2 oz. copper pad, SDT4U40EP3-7B dissipates 1.8 W at 4.0 A (VF ≈ 0.45 V) and stays within TJ ≤ 150°C up to +105°C ambient. Standard FR-4 with minimum recommended pad layout (per Diodes' outline) suffices for full-rated operation.