Diodes Incorporated SDT8A120P5-7

Overview

SDT8A120P5 from Diodes Incorporated is a 120 V, 8 A trench Schottky barrier rectifier in PowerDI5 package, featuring max 0.84 V forward voltage at 8 A/25°C, 300 µA reverse leakage at 120 V/25°C, and 150°C junction rating-used as freewheel or output rectifier in DC-DC converters and AC-DC adapters.

For engineers reviewing the SDT8A120P5 datasheet, SDT8A120P5 pinout, SDT8A120P5 application, or SDT8A120P5 equivalent, key selection criteria include thermal resistance (18 °C/W with heatsink), high-temperature IR stability (17 mA @ 125°C), soft switching behavior, RoHS/Green compliance, and PowerDI5 footprint compatibility with space-constrained power stages.

Technical Context

This Schottky rectifier uses trench MOS-enhanced architecture to achieve low VF while maintaining tight IR control across temperature. Its unidirectional conduction supports continuous forward current up to 8 A with 150 A non-repetitive surge capability.

Thermal performance is defined by two RθJA values: 88 °C/W on standard FR-4 (2 oz Cu) and 18 °C/W on aluminum substrate with 50 mm × 50 mm × 23 mm heatsink-enabling design flexibility for both compact and thermally demanding layouts.

Key Specifications

Pinout & Package

Package: PowerDI5 - surface-mount, thermally enhanced plastic package with exposed copper pad for PCB heat spreading; dimensions: 3.966 mm × 6.51 mm × 1.10 mm (L × W × A); weight: 0.093 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-8EWH12FN-M3 and SB8M120, SDT8A120P5 delivers superior thermal density (18 °C/W with heatsink), smallest footprint among 8 A/120 V Schottkys, and best IR stability at 125°C-making it optimal for space- and thermally constrained 5–10 W/cm³ power designs.

Availability

SDT8A120P5 is available at Aetrix Electronics and suitable for DC-DC converters, AC-DC adapters, and industrial 24 V power supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for SDT8A120P5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

SDT8A120P5 belongs to Diodes' Power Discretes product line, engineered specifically for high-efficiency, high-reliability power conversion in consumer, industrial, and computing applications where low VF and thermal robustness are critical.

FAQ

What is the maximum continuous forward current rating for SDT8A120P5?

The SDT8A120P5 is rated for 8 A average forward current (IO) at TA = +25°C. Derating is required above 25°C ambient: Figure 4 shows linear reduction to zero at 125°C ambient on standard FR-4, or to ~7.5 A at 100°C ambient with heatsink-assisted cooling (RθJA = 18 °C/W).

Does SDT8A120P5 have a specified reverse recovery time (trr)?

No-SDT8A120P5 is a Schottky barrier rectifier with majority-carrier conduction, so it exhibits no reverse recovery charge (Qrr) or measurable trr. This eliminates switching losses and associated ringing in high-frequency topologies, confirmed by zero-recovery waveforms in Diodes' application notes AN-4001 and AN-4005.

Can SDT8A120P5 be used in place of a standard silicon PN rectifier?

Yes, provided VR and IO ratings are met-but only where reverse voltage does not exceed 120 V. Unlike PN diodes, SDT8A120P5 has no reverse recovery, lower VF, and higher IR at elevated temperatures. It must not replace PN diodes in circuits relying on controlled reverse recovery for snubbing or zero-voltage switching.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a minimum 25 mm² copper pour connected to the exposed cathode pad (EP) for RθJA = 18 °C/W. The recommended layout (Package Outline DS39027, Page 4) uses 1.31 mm × 4.86 mm thermal pad with 0.3 mm solder mask opening and 2 oz copper; thermal vias (≥6 × 0.3 mm) into inner ground planes further reduce RθJA by ~3–5 °C/W.