Taiwan Semiconductor Corporation SFAF1004G

Overview

SFAF1004G from Taiwan Semiconductor is a single-die super fast rectifier diode in ITO-220AC package, rated for 200 V repetitive peak reverse voltage (V_RRM), 10 A average forward current (I_F), and 150 A non-repetitive surge current (I_FSM). It delivers 0.975 V forward voltage at 10 A and 25°C, with 35 ns reverse recovery time (t_rr) and 170 pF junction capacitance - optimized for high-frequency switching in DC/DC converters.

For engineers reviewing the SFAF1004G datasheet, SFAF1004G pinout, SFAF1004G application, or SFAF1004G equivalent, key selection criteria include its 200 V V_RRM, low VF at rated current, fast t_rr, thermal resistance of 4°C/W, and AEC-Q101 qualification option - critical for automotive-grade power conversion designs requiring reliability under thermal stress.

Technical Context

The SFAF1004G employs a glass-passivated silicon junction to achieve stable reverse blocking and low leakage (<10 µA at 25°C). Its super-fast recovery (35 ns) enables operation in high-frequency SMPS topologies where diode switching losses must be minimized.

Thermally, it features a low R_θJC of 4°C/W and operates up to 150°C junction temperature. The ITO-220AC package supports direct heatsink mounting with ≤0.56 N·m torque, and matte tin-plated leads ensure J-STD-002 solderability.

Key Specifications

Pinout & Package

Package: ITO-220AC - 3-terminal through-hole package with isolated tab (cathode-connected tab), matte tin-plated leads, UL 94V-0 molding compound, and polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH10R06DJF and VS-10EWH06-M3, the SFAF1004G offers optimal balance of 200 V rating, low 0.975 V forward drop, and AEC-Q101 availability - making it ideal for cost-sensitive, thermally constrained 12–24 V automotive and industrial converters where excessive voltage margin is unnecessary.

Availability

SFAF1004G is available at Aetrix Electronics and suitable for DC/DC converters, switching inverters, and automotive power supplies requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for SFAF1004G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS, and ESD protection components.

The SFAF1004G belongs to TSC's Super Fast Rectifier family, engineered for high-frequency switching power conversion in automotive, industrial, and telecom applications where low VF, fast t_rr, and robust thermal performance are essential.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the SFAF1004G?

The SFAF1004G has a V_RRM of 200 V, as confirmed in the Absolute Maximum Ratings table of the official datasheet. This value is specific to the SFAF1004G variant within the SFAF1001G–SFAF1008G series and is not interchangeable with other members (e.g., SFAF1005G = 300 V). Exceeding 200 V risks irreversible avalanche breakdown.

Is the SFAF1004G AEC-Q101 qualified?

The base SFAF1004G is not AEC-Q101 qualified; however, the AEC-Q101 variant is designated SFAF1004GH per the Ordering Information table. Both share identical electrical and thermal specifications, but only the 'H' suffix indicates automotive qualification testing per AEC-Q101 Rev D. Always verify the suffix on the reel label or packing slip.

What is the forward voltage (V_F) of the SFAF1004G under typical operating conditions?

The SFAF1004G exhibits a maximum forward voltage of 0.975 V at I_F = 10 A and T_J = 25°C, per the Electrical Specifications table. At elevated junction temperatures (e.g., 100°C), V_F decreases slightly due to negative temperature coefficient of silicon diodes - typically ~0.92 V at 10 A and 100°C.

Does the SFAF1004G have a thermally isolated package?

No - the ITO-220AC package used by the SFAF1004G features an electrically connected metal tab that serves as both the cathode terminal and primary thermal path. To achieve electrical isolation, a mica or polymer insulating washer and shoulder washer must be used between the tab and heatsink, while maintaining ≤0.56 N·m mounting torque.

What is the junction-to-case thermal resistance (R_θJC) of the SFAF1004G?

The SFAF1004G has a typical junction-to-case thermal resistance of 4°C/W, as specified in the Thermal Performance section. This value assumes proper mounting to a flat, smooth heatsink surface with thermal interface material and correct torque (≤0.56 N·m); actual system-level R_θJA depends on heatsink size, airflow, and ambient conditions.