My Inquiry
My Account
Taiwan Semiconductor Corporation SFAF1004GH
- Part No.:
- SFAF1004GH
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
SFAF1004GH.pdf
- Description:
- 35NS, 10A, 200V, SUPER FAST RECO
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SFAF1004GH from Taiwan Semiconductor is a 10A, 200V AEC-Q101-qualified super fast rectifier in ITO-220AC package, featuring 0.975V forward voltage at 10A/25°C, 35ns reverse recovery time, and 170pF junction capacitance - deployed in automotive-grade DC-DC converters and switching inverters.
For engineers reviewing the SFAF1004GH datasheet, SFAF1004GH pinout, SFAF1004GH application, or SFAF1004GH equivalent, key selection criteria include its AEC-Q101 qualification, 200V VRRM, 150A IFSM, thermal resistance of 4°C/W, and ITO-220AC mounting compatibility with 0.56 N·m torque limit.
Technical Context
This single-die super fast rectifier uses glass passivated junction technology to achieve low conduction loss and rapid carrier recombination. Its 35ns trr and 0.975V VF at 10A enable high-frequency switching efficiency in hard-switched topologies.
The device operates across –55°C to +150°C junction temperature range with UL 94V-0 molding compound and matte tin-plated leads compliant with J-STD-002. It delivers 150A non-repetitive surge current under 8.3ms half-sine waveform.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive reverse blocking voltage for reliable operation in 200V-rated power rails |
| IF | 10 A - continuous average forward current rating at case temperature ≤75°C |
| IFSM | 150 A - peak non-repetitive surge current handling capability during startup or fault transients |
| VF | 0.975 V @ 10A, 25°C - low conduction loss enabling >95% efficiency in 12V–48V DC-DC stages |
| trr | 35 ns - fast reverse recovery minimizing switching losses in 100–500 kHz SMPS designs |
| RθJC | 4 °C/W - thermal resistance enabling 10A operation with ≤40°C temperature rise above heatsink |
| CJ | 170 pF @ 1MHz, 4V - low junction capacitance reducing capacitive turn-on loss in high-side configurations |
Pinout & Package
Package: ITO-220AC - insulated TO-220 variant with isolated collector tab, UL 94V-0 mold compound, matte tin-plated leads, and 1.70g mass. Mounting torque limited to 0.56 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Forward current entry point | Connected to input rail or switch node; requires low-inductance layout for fast recovery |
| Cathode (Tab) | Forward current exit / heat sink interface | Electrically active collector terminal; must be electrically isolated from chassis unless circuit design specifies common-cathode configuration |
| NC (Lead 2) | No connection | Unused lead; left unconnected per datasheet - not internally bonded |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics per stress test requirements including HTOL, TCT, and H3TRB |
| Glass passivated junction | Eliminates moisture-induced leakage degradation and enables stable IR < 10 µA up to 100°C |
| Super fast recovery (35 ns) | Reduces reverse recovery charge (Qrr) to < 25 nC, lowering EMI and diode switching loss in synchronous rectification |
| UL Recognized (E-326243) | Meets end-equipment safety compliance for industrial and automotive power supplies without additional isolation barriers |
| Halogen-free (IEC 61249-2-21) | Supports RoHS-compliant manufacturing and eliminates corrosive gas emission during PCB reflow or field failure |
Applications
| Automotive DC-DC Converters | Industrial Switching Inverters |
|---|---|
Use Scenario: 12V-to-48V bidirectional converter in 48V mild-hybrid vehicle architecture. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck-boost stage, conducting during low-side FET off-time. Use Value: 35ns trr prevents shoot-through risk with 100kHz gate drive; 0.975V VF limits conduction loss to < 9.75W at 10A. | Use Scenario: Output rectification in 3kW solar micro-inverter with SiC MOSFET half-bridge. IC Role / Device Role / Timing Role: High-speed output clamp and freewheel path during dead-time intervals. Use Value: 170pF CJ minimizes capacitive coupling into gate driver; 150A IFSM withstands grid-fault surges. |
| Server PSU Secondary Side | EV Onboard Charger (OBC) PFC Stage |
Use Scenario: Secondary-side synchronous rectification replacement in 80+ Titanium AC-DC power supply. IC Role / Device Role / Timing Role: Fast-recovery flyback output diode operating at 200kHz switching frequency. Use Value: 4°C/W RθJC allows direct heatsink mounting without thermal pad; 200V VRRM supports 12V/48V/54V output variants. | Use Scenario: Boost diode in two-stage OBC with 400V DC-link and 6.6kW output. IC Role / Device Role / Timing Role: High-voltage boost rectifier handling 200V reverse stress during zero-current switching transitions. Use Value: Glass passivation ensures < 10µA leakage at 100°C ambient, maintaining PFC efficiency over lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar super fast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10L06TV1 | 600V VRRM, 35ns trr, 0.95V VF - higher voltage rating but same speed and lower VF | Designed for 400–600V PFC stages; less optimal for 200V systems due to higher Qrr and cost | Select when system requires margin above 200V or future voltage scalability |
| ON Semi MUR1020CT | 200V VRRM, dual common-cathode configuration, 35ns trr, 1.05V VF - same voltage, higher VF, different package (TO-220AB) | Requires dual-diode layout; unsuitable for single-diode freewheeling where tab isolation is mandatory | Choose only if dual-diode topology and TO-220AB footprint are fixed in existing design |
Compared with STTH10L06TV1 and MUR1020CT, the SFAF1004GH offers optimal balance of 200V rating, AEC-Q101 qualification, ITO-220AC isolation, and lowest VF in its voltage class - making it preferred for space-constrained, thermally demanding automotive and industrial converters.
Availability
SFAF1004GH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and EV onboard charger PFC stages requiring stable component supply with AEC-Q101 assurance and long-term production continuity.
Supply support for SFAF1004GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.
The SFAF100xG series targets high-reliability power conversion systems requiring AEC-Q101 validation, fast recovery, and robust thermal performance - specifically engineered for next-generation 48V automotive subsystems and high-density industrial SMPS.
FAQ
What is the maximum junction temperature rating for SFAF1004GH?
The SFAF1004GH has a maximum junction temperature (TJ) of +150°C, verified across its full operating range from –55°C to +150°C. This rating is maintained under rated IF = 10A with proper heatsinking achieving ≤4°C/W junction-to-case thermal resistance. The device's glass passivated die ensures stable electrical parameters up to this limit without parameter drift or premature failure.
Is SFAF1004GH pin-compatible with standard TO-220AC packages?
Yes, the SFAF1004GH uses the ITO-220AC package - a mechanically identical outline to TO-220AC but with electrically isolated collector tab. Pin 1 is anode, tab is cathode, and Pin 2 is NC. Mounting hole spacing, lead pitch, and overall dimensions match TO-220AC, enabling drop-in replacement where isolation is required; however, thermal pad orientation and tab voltage assignment must be verified in layout.
Does SFAF1004GH meet automotive qualification standards?
Yes, the "H" suffix in SFAF1004GH explicitly denotes AEC-Q101 qualification. The device undergoes full stress testing including high-temperature operating life (HTOL), temperature cycling (TCT), and highly accelerated temperature-humidity bias (H3TRB), with zero failures reported in qualification lots. This makes SFAF1004GH suitable for under-hood and battery-management applications in passenger vehicles and commercial EVs.
What is the reverse leakage current specification for SFAF1004GH at elevated temperature?
At TJ = 100°C and rated VR = 200V, the SFAF1004GH exhibits a maximum reverse leakage current (IR) of 400 µA, measured under 30ms pulse conditions. At 25°C, leakage is ≤10 µA. This low, thermally stable leakage is enabled by glass passivation and ensures minimal standby power loss in high-temperature automotive environments.
How does the junction capacitance of SFAF1004GH affect high-frequency switching performance?
The SFAF1004GH has a typical junction capacitance (CJ) of 170 pF at 1 MHz and 4V reverse bias. This low value reduces displacement current during voltage transitions, minimizing EMI generation and gate-drive loading in high-frequency (≥100 kHz) topologies. When paired with SiC or GaN switches, it avoids resonant ringing and maintains clean dead-time behavior without requiring snubbers.
SFAF1004GH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 975 mV @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 35 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 200 V
- Capacitance @ Vr, F:
- 170pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
SFAF1004GH FAQ
1.How can I place an order for SFAF1004GH through Aetrix?
Please submit a Request for Quotation (RFQ) for SFAF1004GH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SFAF1004GH reliable?
The price and inventory of SFAF1004GH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SFAF1004GH is usually 5 days.
3.What payment methods are accepted for SFAF1004GH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SFAF1004GH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SFAF1004GH?
SFAF1004GH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SFAF1004GH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SFAF1004GH?
For technical support, including SFAF1004GH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SFAF1004GH requirements.
6.How does Aetrix verify that SFAF1004GH is sourced from the original manufacturer or authorized distributors?
All SFAF1004GH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SFAF1004GH meets industry standards.
7.What is the process for return or replacement of SFAF1004GH?
All SFAF1004GH units undergo pre-shipment inspection (PSI). If there is an issue with SFAF1004GH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SFAF1004GH part is unused and in its original packaging.
Return procedure for SFAF1004GH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SFAF1004GH Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
