Taiwan Semiconductor Corporation SFAF1007G

Overview

SFAF1007G from Taiwan Semiconductor is a single-die, AEC-Q101-qualified super fast rectifier in ITO-220AC package, rated for 10 A average forward current, 500 V repetitive peak reverse voltage (V_RRM), and 1.70 V typical forward voltage at 10 A and 25°C - deployed in high-efficiency DC-DC converters and switching inverters requiring low conduction loss and fast recovery.

For engineers reviewing the SFAF1007G datasheet, SFAF1007G pinout, SFAF1007G application, or SFAF1007G equivalent, key selection criteria include its 35 ns reverse recovery time, 140 pF junction capacitance at 1 MHz/4 V, 150 A surge capability, 4°C/W junction-to-case thermal resistance, and compatibility with automotive-grade reliability requirements per JESD201 Class 2 whisker testing.

Technical Context

The SFAF1007G is a unidirectional silicon rectifier optimized for high-frequency switching topologies. Its glass-passivated junction ensures stable operation up to 150°C junction temperature, while its 500 V V_RRM rating targets mid-voltage industrial and automotive power conversion stages where 400–600 V blocking is required.

With a typ. 1.70 V V_F at 10 A and 25°C, it balances conduction loss against recovery speed - delivering 35 ns trr and 140 pF C_J, making it suitable for hard-switched SMPS operating above 50 kHz where diode reverse recovery impacts efficiency and EMI.

Key Specifications

Pinout & Package

Package: ITO-220AC - insulated thermally enhanced outline with single anode/cathode configuration, matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH10R06DJF and VS-10EWH06-M3, the SFAF1007G offers optimal balance of 500 V rating, 1.70 V V_F, and AEC-Q101 qualification - making it preferred for cost-sensitive automotive and industrial designs where 600 V headroom is unnecessary and reliability under thermal cycling is prioritized.

Availability

SFAF1007G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and automotive onboard chargers requiring stable component supply, long-term lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for SFAF1007G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, automotive, and consumer markets since 1979.

The SFAF1007G belongs to TSC's AEC-Q101-qualified super fast rectifier family, engineered for high-efficiency, high-reliability power conversion in automotive electrification and industrial automation systems.

FAQ

What is the maximum junction temperature rating for the SFAF1007G?

The SFAF1007G has a maximum junction temperature (T_J) of +150°C, verified across its full operating range. This rating enables reliable operation in high-ambient environments such as engine bays or enclosed industrial enclosures when paired with appropriate heatsinking. Derating curves in the official datasheet define safe I_F limits above 25°C ambient, and the device maintains specified V_F and t_rr performance up to this limit. The SFAF1007G must not exceed 150°C at the die level during continuous operation.

Does the SFAF1007G have AEC-Q101 qualification?

Yes, the SFAF1007G is AEC-Q101 qualified - confirmed by Taiwan Semiconductor's documentation and UL Recognition File #E-326243. This qualification covers stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing. Note that only the "H" suffix variant (e.g., SFAF1007GH) carries formal AEC-Q101 certification; standard SFAF1007G shares identical die and construction but may lack full test documentation unless ordered with H-suffix. Always verify ordering code for qualification status.

What is the reverse recovery time (t_rr) specification for the SFAF1007G?

The SFAF1007G has a maximum reverse recovery time (t_rr) of 35 ns, measured under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A conditions. This value is consistent across the SFAF1005G–SFAF1008G series and reflects its super fast recovery performance. The 35 ns t_rr enables efficient operation in switching frequencies up to several hundred kHz, reducing switching losses and associated EMI compared to standard fast recovery diodes. The SFAF1007G's t_rr remains stable across its rated temperature range.

How does the forward voltage (V_F) of the SFAF1007G compare to lower-voltage variants in the same family?

The SFAF1007G exhibits a typical forward voltage of 1.70 V at 10 A and 25°C - higher than SFAF1001G–SFAF1004G (0.975 V) and SFAF1005G–SFAF1006G (1.300 V), reflecting the trade-off between blocking voltage and conduction loss. This increase results from higher doping resistance in the wider depletion region needed for 500 V operation. The SFAF1007G's V_F is optimized for efficiency in 400–500 V bus applications where its 500 V V_RRM provides necessary margin without over-specifying voltage rating.

What is the thermal resistance (R_θJC) of the SFAF1007G and how does it impact heatsink design?

The SFAF1007G has a typical junction-to-case thermal resistance (R_θJC) of 4°C/W, measured from die to the ITO-220AC metal tab. This low value enables effective heat transfer when mounted to a properly sized heatsink using recommended 0.56 N·m torque. For example, at 10 A continuous load with 1.70 V V_F, power dissipation is ~17 W; with R_θJC = 4°C/W and a 2°C/W heatsink, total rise is ~102°C - requiring case temperature control below 48°C to stay within the 150°C T_J limit. The SFAF1007G's R_θJC is identical across the SFAF1001G–SFAF1008G series.