Taiwan Semiconductor Corporation SFAF503G

Overview

SFAF503G from Taiwan Semiconductor is a 5A, 150V repetitive peak reverse voltage super fast rectifier diode in ITO-220AC package, featuring 35ns reverse recovery time, 0.975V max forward voltage at 5A/25°C, and AEC-Q101 qualification option (SFAF503GH). It serves as a freewheeling or output rectifier in DC-DC converters.

For engineers reviewing the SFAF503G datasheet, SFAF503G pinout, SFAF503G application, or SFAF503G equivalent, key selection criteria include V_RRM=150V, I_F=5A, t_rr=35ns, R_θJC=5°C/W, and ITO-220AC thermal/mechanical compatibility with high-surge switching power supplies.

Technical Context

The SFAF503G employs a glass-passivated silicon junction optimized for low conduction loss and fast recovery. Its 35ns t_rr enables operation in high-frequency switching topologies up to several hundred kHz, while maintaining low reverse leakage (≤10µA @ 25°C, ≤400µA @ 125°C) and stable junction capacitance (70pF @ 4V).

Designed for single-die configuration in ITO-220AC, it supports mounting torque up to 0.56 N·m and meets JESD201 Class 2 whisker resistance. The device operates across -55°C to +150°C junction temperature range with 5°C/W thermal resistance from junction to case.

Key Specifications

Pinout & Package

ITO-220AC package: 3-terminal, single-anode/single-cathode configuration with isolated metal tab (cathode-connected), matte tin-plated leads, UL 94V-0 molding compound, and polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH5L06D and MUR5150, the SFAF503G offers best-in-class V_F/t_rr trade-off for 150V applications, AEC-Q101 qualification path, and lower thermal resistance (5°C/W vs. typical 6.5°C/W in TO-220AC variants), enabling smaller heatsinks in space-constrained designs.

Availability

SFAF503G is available at Aetrix Electronics and suitable for DC-DC converter output rectification, switching mode inverter freewheeling, and automotive body control module power supplies requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant alternatives.

Supply support for SFAF503G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, automotive, and consumer markets since 1979.

The SFAF503G belongs to TSC's Super Fast Rectifier family, engineered specifically for high-efficiency, high-reliability power conversion in automotive-grade and industrial-grade switching power supplies where low V_F, fast t_rr, and robust thermal performance are critical.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for SFAF503G?

The SFAF503G has a V_RRM of 150 V, as confirmed in the Absolute Maximum Ratings table. This value is fixed per part number and distinct from other members of the SFAF501G–SFAF508G series (e.g., SFAF501G = 50 V, SFAF508G = 600 V). Designers must ensure reverse voltage transients remain below this limit with appropriate derating.

Does SFAF503G have AEC-Q101 qualification?

The base SFAF503G is not AEC-Q101 qualified; however, the variant SFAF503GH is explicitly listed as AEC-Q101 qualified in the Ordering Information section. Both share identical electrical and thermal specifications, differing only in qualification testing and marking ('H' suffix). Use SFAF503GH for automotive applications requiring AEC-Q101 compliance.

What is the forward voltage (V_F) of SFAF503G at rated current?

The SFAF503G exhibits a maximum forward voltage of 0.975 V at I_F = 5 A and T_J = 25°C, per the Electrical Specifications table. This value applies specifically to SFAF501G–SFAF504G variants; higher-voltage versions (SFAF505G–SFAF508G) show progressively higher V_F due to wider bandgap trade-offs.

What package type does SFAF503G use, and is the metal tab electrically active?

SFAF503G uses the ITO-220AC package, with the metal tab internally connected to the cathode terminal. This is confirmed in the Mechanical Data section and Marking Diagram. The tab must be electrically isolated from other circuit nodes unless intentionally tied to cathode potential, and serves as the primary thermal conduction path to the heatsink.

How does the reverse recovery time (t_rr) of SFAF503G impact switching loss in high-frequency designs?

The SFAF503G specifies t_rr = 35 ns under IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A conditions. At 300–500 kHz operation, this enables low reverse recovery charge (Q_rr ≈ 8.75 nC), reducing turn-off switching loss and EMI generation compared to standard fast rectifiers with t_rr > 70 ns. This directly improves efficiency in compact, high-density SMPS layouts.