Taiwan Semiconductor Corporation SFAF508GH

Overview

SFAF508GH from Taiwan Semiconductor is a 5A, 600V super fast recovery rectifier diode in ITO-220AC package, featuring 1.700 V forward voltage at 5A/25°C, 35 ns reverse recovery time, 125 A surge capability, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the SFAF508GH datasheet, SFAF508GH pinout, SFAF508GH application, or SFAF508GH equivalent, key selection factors include its 600 V repetitive peak reverse voltage, low 5 °C/W junction-to-case thermal resistance, UL Recognized status (E-326243), RoHS/halogen-free compliance, and suitability for high-efficiency DC-DC and switching-mode power supplies.

Technical Context

This super fast rectifier uses a glass passivated silicon junction to achieve rapid carrier recombination, enabling trr ≤ 35 ns under IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A test conditions. Its single-die configuration and ITO-220AC thermally optimized package support continuous 5 A conduction with TJ up to +150 °C.

The device operates across –55 °C to +150 °C junction temperature range, exhibits only 10 µA max reverse leakage at 25 °C and rated VR, and maintains stable CJ = 70 pF at 1 MHz / 4.0 V reverse bias - critical for minimizing switching losses in high-frequency converters.

Key Specifications

Pinout & Package

ITO-220AC package: 3-terminal through-hole outline with isolated tab (cathode-connected), matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH5L06H and MUR560HE3/A, the SFAF508GH delivers best-in-class trr/VF tradeoff for 600 V superfast rectifiers - achieving 35 ns recovery with 1.700 V drop - making it optimal for high-frequency, high-efficiency automotive and industrial SMPS where thermal and switching loss budgets are tightly constrained.

Availability

SFAF508GH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and renewable energy charge controllers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SFAF508GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.

The SFAF501G–SFAF508G family targets high-reliability power conversion applications, with the SFAF508GH specifically engineered for 600 V automotive-grade rectification where fast recovery, thermal robustness, and qualification assurance are mandatory.

FAQ

What is the maximum junction temperature rating for SFAF508GH?

The SFAF508GH has a maximum junction temperature (TJ MAX) of +150 °C, verified per JEDEC JESD22-A108. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial settings. Derating begins above 100 °C case temperature, and the device maintains full 5 A current capability up to that point. The SFAF508GH's glass passivated junction and ITO-220AC package contribute to sustained performance at elevated temperatures.

Is SFAF508GH pin-compatible with standard TO-220AC rectifiers?

Yes, the SFAF508GH uses the ITO-220AC package, which shares identical mechanical dimensions, lead spacing, and mounting hole layout with industry-standard TO-220AC. Its anode, cathode, and tab terminals align with conventional TO-220AC rectifier pinout. However, the tab is cathode-connected - insulation must be used if mounted to a non-grounded heatsink. No PCB redesign is needed when replacing legacy TO-220AC rectifiers with the SFAF508GH.

What does the "H" suffix in SFAF508GH signify?

The "H" suffix in SFAF508GH explicitly denotes AEC-Q101 qualification, confirming that the device has passed all stress tests defined in the AEC-Q101 standard for discrete semiconductors, including HTGB, HTRB, uHAST, TC, and mechanical shock. This makes the SFAF508GH suitable for automotive powertrain, body electronics, and ADAS applications where component-level reliability validation is mandatory. Non-H variants (e.g., SFAF508G) lack this qualification.

How does the reverse recovery time of SFAF508GH impact EMI in high-frequency converters?

The SFAF508GH's trr of 35 ns reduces high-frequency ringing during diode turn-off, directly lowering broadband EMI generation in converters operating above 100 kHz. Fast, controlled recovery minimizes di/dt-induced voltage spikes across parasitic inductances, decreasing common-mode noise coupling into input filters and control circuitry. When paired with proper snubbing and layout, the SFAF508GH helps meet CISPR-25 Class 5 limits in automotive power modules without adding extra filtering components.

What is the typical forward voltage drop of SFAF508GH at elevated temperature?

At TJ = 125 °C and IF = 5 A, the SFAF508GH exhibits a forward voltage drop of approximately 1.45 V - lower than its 1.700 V value at 25 °C due to the negative temperature coefficient of silicon PN junctions. This behavior improves thermal stability in parallel configurations and reduces conduction loss under high-temperature operation. The SFAF508GH's VF remains well-controlled across its full –55 °C to +150 °C junction range, supporting predictable power budgeting in thermal simulations.