Taiwan Semiconductor Corporation SFAF804GH

Overview

SFAF804GH from Taiwan Semiconductor is an AEC-Q101-qualified super fast rectifier diode in ITO-220AC package, rated for 200 V repetitive peak reverse voltage (V_RRM), 8 A average forward current (I_F), and 125 A non-repetitive surge current (I_FSM). It delivers low forward voltage drop (0.95 V at 8 A, 25°C) and ultra-fast reverse recovery (35 ns), making it suitable for high-frequency switching mode power supplies in automotive and industrial converters.

For engineers reviewing the SFAF804GH datasheet, SFAF804GH pinout, SFAF804GH application, or SFAF804GH equivalent, key selection criteria include its 200 V V_RRM, 4 °C/W junction-to-case thermal resistance, glass-passivated die construction, UL recognition (E-326243), and halogen-free compliance per IEC 61249-2-21.

Technical Context

This super fast rectifier employs a single-die silicon PN junction with glass passivation to ensure stable operation under high dv/dt and repetitive surge stress. Its 35 ns reverse recovery time (trr) and 90 pF junction capacitance (C_J) at 1 MHz/4 V support efficient high-frequency freewheeling and snubberless operation in DC–DC stages.

The device operates across –55°C to +150°C junction temperature range and features matte tin-plated leads compliant with J-STD-002 solderability. Thermal performance is defined by R_θJC = 4 °C/W, enabling reliable heat transfer when mounted on heatsinks with ≤0.56 N·m torque.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with electrically isolated tab (non-conductive backside), UL 94V-0 molding compound, and matte tin-plated leads. Mounting torque ≤0.56 N·m. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH8R02DJF and VS-8EWH02FN-M3, the SFAF804GH provides identical 200 V/8 A rating and 35 ns recovery but uniquely combines AEC-Q101 qualification, UL recognition, and 0.95 V forward voltage-making it optimal for thermally constrained automotive designs requiring certified reliability.

Availability

SFAF804GH is available at Aetrix Electronics and suitable for automotive DC–DC converters, industrial switch-mode power supplies, and UPS inverter output stages requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for SFAF804GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The SFAF801G–SFAF808G series was designed specifically for high-efficiency, high-reliability rectification in automotive-grade power conversion, emphasizing low V_F, fast t_rr, and robust thermal performance in ITO-220AC packaging.

FAQ

What is the maximum junction temperature rating for the SFAF804GH?

The SFAF804GH has a maximum junction temperature (T_J) of +150°C and a minimum of –55°C. This rating allows operation in under-hood automotive environments and high-ambient industrial enclosures. Derating curves in the datasheet define allowable I_F versus case temperature, with full 8 A current supported up to T_C = 110°C. Thermal design must respect R_θJC = 4 °C/W to avoid exceeding T_J limit.

Is the SFAF804GH pin-compatible with other devices in the SFAF801G–SFAF808G family?

Yes, all SFAF801G–SFAF808G variants-including the SFAF804GH-share identical ITO-220AC package dimensions, pinout (anode/cathode/tab), and mechanical mounting specifications. Voltage ratings differ across the family (50–600 V), but PCB layout, heatsink interface, and solder profile remain unchanged. No redesign is needed when substituting within the series for voltage optimization.

Does the SFAF804GH require a heatsink in typical 8 A operation?

Yes, the SFAF804GH requires a heatsink for continuous 8 A operation at ambient temperatures above ~45°C. With R_θJC = 4 °C/W and typical V_F = 0.95 V, power dissipation is ~7.6 W. Assuming 20 °C/W system thermal resistance (heatsink + interface), junction temperature rises ~152°C above ambient-exceeding the 150°C limit. A properly sized heatsink keeping T_C ≤ 110°C is mandatory for rated current.

What does the "H" suffix in SFAF804GH signify?

Per Taiwan Semiconductor's ordering information, the "H" suffix in SFAF804GH explicitly denotes AEC-Q101 qualification. This means the SFAF804GH has undergone rigorous stress testing-including temperature cycling, high-temperature reverse bias, and unbiased highly accelerated stress testing-to meet automotive electronic component reliability standards. Non-H variants (e.g., SFAF804G) lack this qualification.

How does the glass passivation in the SFAF804GH improve long-term reliability?

Glass passivation in the SFAF804GH forms a hermetic, chemically inert barrier over the silicon junction, preventing oxidation, ion migration, and moisture-induced leakage paths. This directly enhances long-term parameter stability-especially reverse leakage (I_R)-under thermal cycling and humid conditions. It also improves resistance to solder flux residues and cleaning solvents, supporting robust manufacturing yield and field lifetime in automotive and industrial deployments.