Taiwan Semiconductor Corporation SFAF808GHC0G

Overview

SFAF808GHC0G from Taiwan Semiconductor is an AEC-Q101-qualified super fast rectifier diode in ITO-220AC package, rated for 600 V repetitive peak reverse voltage (V_RRM), 8 A average forward current (I_F), and 125 A non-repetitive surge current (I_FSM). It delivers 1.700 V forward voltage at 8 A and 25°C, with 35 ns reverse recovery time (t_rr) and 60 pF junction capacitance-optimized for high-efficiency DC/DC converters and freewheeling in automotive power systems.

For engineers reviewing the SFAF808GHC0G datasheet, SFAF808GHC0G pinout, SFAF808GHC0G application, or SFAF808GHC0G equivalent, key selection criteria include its 600 V V_RRM, AEC-Q101 qualification, 1.700 V V_F at 8 A, 35 ns t_rr, and ITO-220AC thermal performance (R_θJC = 4°C/W) for reliable operation in high-temp automotive switching circuits.

Technical Context

This device is a single-die, glass-passivated super fast recovery rectifier designed for minimal switching losses in high-frequency power conversion. Its 35 ns reverse recovery time and low 60 pF junction capacitance enable efficient operation above 100 kHz, while the 600 V V_RRM rating supports primary-side rectification in offline SMPS and boost PFC stages.

The ITO-220AC package provides direct heatsink mounting capability with 4°C/W junction-to-case thermal resistance, and matte tin-plated leads meet J-STD-002 solderability standards. Polarity is marked on the case, and the device complies with UL 94V-0, RoHS, and halogen-free (IEC 61249-2-21) requirements.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with electrically isolated tab, 1.70 g mass, UL 94V-0 molding compound, and matte tin-plated leads rated for J-STD-002 solderability. Mounting torque ≤0.56 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH8R06DJF and MUR860EG, the SFAF808GHC0G offers AEC-Q101 validation and tighter V_F spec (1.700 V max), making it uniquely suitable for automotive-grade 600 V rectification where reliability and parametric consistency are mandatory.

Availability

SFAF808GHC0G is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial switching mode power supplies, and EV onboard charger auxiliary supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for SFAF808GHC0G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, MOSFETs, and ICs for industrial and automotive markets.

The SFAF801G–SFAF808G family is engineered specifically for high-reliability, high-voltage rectification in automotive and industrial power conversion, emphasizing AEC-Q101 qualification, low V_F, and fast t_rr across the 50–600 V range.

FAQ

What is the maximum junction temperature rating for SFAF808GHC0G?

The SFAF808GHC0G has a maximum junction temperature (T_J) of +150°C, validated under AEC-Q101 stress testing. This rating allows operation in under-hood automotive environments and high-ambient industrial settings. Derating curves confirm 8 A I_F is sustainable up to 125°C case temperature. The SFAF808GHC0G must be thermally managed to maintain T_J ≤150°C under worst-case load and ambient conditions.

Does SFAF808GHC0G have AEC-Q101 qualification, and what does the 'H' suffix indicate?

Yes, SFAF808GHC0G is AEC-Q101 qualified-the 'H' in the ordering code explicitly denotes this automotive-grade qualification. The device underwent HTOL, temperature cycling, HTRB, and other stress tests per AEC-Q101 Rev D. This makes SFAF808GHC0G suitable for automotive powertrain and body electronics where reliability beyond commercial-grade components is mandated.

What is the reverse recovery time (t_rr) of SFAF808GHC0G, and how is it measured?

The SFAF808GHC0G has a typical reverse recovery time (t_rr) of 35 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. This value is confirmed in the official Taiwan Semiconductor datasheet (Version L2106, Page 2). The fast t_rr reduces switching loss and EMI in high-frequency converters, and the SFAF808GHC0G maintains this performance across its full operating temperature range.

How does the forward voltage (V_F) of SFAF808GHC0G compare to lower-voltage variants in the SFAF80xG family?

The SFAF808GHC0G specifies a maximum V_F of 1.700 V at 8 A and 25°C-higher than SFAF804G (0.950 V) due to its wider bandgap silicon design for 600 V blocking. This trade-off ensures robustness at high voltage while maintaining competitive conduction loss. All variants share identical ITO-220AC packaging and thermal performance, so the SFAF808GHC0G delivers predictable thermal behavior despite higher V_F.

Is the tab of SFAF808GHC0G electrically isolated, and what is its thermal role?

Yes, the tab of SFAF808GHC0G is electrically isolated and serves exclusively as a thermal interface. In the ITO-220AC package, the tab is insulated from both anode and cathode terminals, enabling direct mounting to a heatsink without dielectric isolation hardware. Its R_θJC of 4°C/W allows efficient heat transfer, and the SFAF808GHC0G relies on this path to maintain safe junction temperatures under sustained 8 A loads.