Taiwan Semiconductor Corporation SFS1007G

Overview

SFS1007G from Taiwan Semiconductor is a 10A, 600V super fast surface-mount rectifier in TO-263AB (D2PAK) package with dual-die configuration, 1.700V max forward voltage at 5A/25°C, 35ns reverse recovery time, and 50pF junction capacitance per diode - used in high-frequency switching mode power supplies for freewheeling and output rectification.

For engineers reviewing the SFS1007G datasheet, SFS1007G pinout, SFS1007G application, or SFS1007G equivalent, key selection criteria include its 600V V_RRM, 125A I_FSM, 2°C/W R_θJC, JESD201 Class 2 whisker resistance, and RoHS/halogen-free compliance for industrial DC-DC and inverter designs.

Technical Context

The SFS1007G implements a dual-die super fast recovery rectifier architecture optimized for high-voltage, high-current switching applications. Its 600V repetitive peak reverse voltage and 35ns trr enable efficient operation in 100–500kHz SMPS topologies, while the 2°C/W junction-to-case thermal resistance supports sustained 10A conduction under forced-air cooling.

Each die operates as an independent ultra-fast rectifier with 1.700V max VF at 5A/25°C and 200µA max IR at 125°C. The TO-263AB package integrates matte tin-plated leads compliant with J-STD-002 solderability and J-STD-020 Level 1 moisture sensitivity - eliminating bake requirements prior to reflow.

Key Specifications

Pinout & Package

TO-263AB (D2PAK) package with three terminals: Anode 1, Cathode (common), Anode 2 - polarity marked on top surface per device marking diagram; cathode tab is electrically connected to the exposed metal pad for low-inductance thermal and electrical path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH10R06DJF and IXYS MUR1060CT, the SFS1007G delivers lower forward voltage (1.700V vs. ≥1.85V), tighter junction capacitance (50pF vs. ≥75pF), and identical 35ns trr - making it optimal for high-frequency, high-efficiency industrial SMPS where thermal and EMI constraints dominate.

Availability

SFS1007G is available at Aetrix Electronics and suitable for DC-DC converters, switching mode inverters, and freewheeling applications requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.

Supply support for SFS1007G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and power electronics markets since 1979.

The SFS1001G–SFS1008G family was designed specifically for high-voltage, high-frequency switching power conversion - emphasizing ultra-fast recovery, low VF, and robust thermal performance in surface-mount packages for next-generation SMPS and motor drives.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the SFS1007G?

The SFS1007G has a maximum repetitive peak reverse voltage (V_RRM) of 600 V, as confirmed in the Absolute Maximum Ratings table for the SFS1007G row. This rating applies across the full operating temperature range and defines the highest reverse voltage the device can block continuously without breakdown. It is critical for selecting appropriate voltage margin in 400V DC-link applications.

Does the SFS1007G have a dual-die configuration, and how is it implemented in the TO-263AB package?

Yes, the SFS1007G uses a dual-die configuration housed in a single TO-263AB (D2PAK) package. The internal structure contains two independent super fast rectifier dies sharing a common cathode terminal (exposed thermal pad), with separate anode terminals (Anode 1 and Anode 2) accessible via the left and right leads. This enables parallel or interleaved rectification without external balancing components.

What is the typical forward voltage (V_F) of the SFS1007G at 5A and 25°C, and how does it compare to lower-voltage variants in the same family?

The SFS1007G exhibits a maximum forward voltage (V_F) of 1.700 V at 5A and 25°C, per the Electrical Specifications table. This is higher than the SFS1001G–SFS1004G group (≤0.975 V) and SFS1005G–SFS1006G group (≤1.300 V), reflecting the trade-off between higher blocking voltage and increased conduction loss inherent in silicon PN-junction design.

Is the SFS1007G compliant with RoHS and halogen-free standards, and what specifications confirm this?

Yes, the SFS1007G is RoHS compliant and halogen-free per IEC 61249-2-21, as explicitly stated in the FEATURES section of the datasheet. The device uses molding compound meeting UL 94V-0 flammability rating and matte tin-plated leads qualified to J-STD-002 solderability - all verified in the Mechanical Data and Ordering Information sections.

What is the junction-to-case thermal resistance (R_θJC) of the SFS1007G, and why is this value important for thermal design?

The SFS1007G has a typical junction-to-case thermal resistance (R_θJC) of 2°C/W, specified in the Thermal Performance section. This low value indicates highly efficient heat transfer from the silicon die to the D2PAK thermal pad, enabling direct attachment to heatsinks or copper planes. It allows designers to sustain 10A continuous current with minimal temperature rise - critical for compact, convection-cooled industrial power supplies.