Taiwan Semiconductor Corporation SFT14G

Overview

SFT14G from Taiwan Semiconductor is a 200 V, 1 A super fast recovery rectifier diode in TS-1 package, featuring 35 ns reverse recovery time, 0.95 V forward voltage at 1 A/25°C, and 30 A surge current capability-used in DC-DC converters and switching inverters for high-efficiency power conversion.

For engineers reviewing the SFT14G datasheet, SFT14G pinout, SFT14G application, or SFT14G equivalent, key selection criteria include V_RRM = 200 V, I_F = 1 A, t_rr = 35 ns, V_F = 0.95 V, and TS-1 package compatibility with high-density PCB layouts requiring low forward loss and fast switching.

Technical Context

The SFT14G employs a planar epitaxial silicon structure optimized for super-fast recovery (t_rr ≤ 35 ns), enabling operation in high-frequency switching topologies up to several hundred kHz. Its 200 V V_RRM rating and 100 °C/W R_θJA support thermally constrained designs in compact power supplies.

Designed for unidirectional conduction, it delivers low conduction loss (V_F = 0.95 V @ 1 A, 25°C) and low leakage (I_R ≤ 5 µA @ 200 V, 25°C), with junction temperature range from –55°C to +150°C and AEC-Q101 qualification available in H-suffix variants.

Key Specifications

Pinout & Package

Package: TS-1 - Surface-mount, single-diode configuration with cathode band marking; 3.7 mm × 2.7 mm footprint, 1.25 mm height, pure tin-plated leads compliant with J-STD-002 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH1R02U and ES1D, the SFT14G offers optimal balance of speed (35 ns), low V_F (0.95 V), and ultra-compact TS-1 packaging-making it preferred for space-constrained, thermally managed 1 A power stages where board area and thermal resistance are critical.

Availability

SFT14G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and industrial power supplies requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for SFT14G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and automotive markets since 1979.

The SFT14G belongs to TSC's Super Fast Rectifier family, engineered specifically for high-frequency, high-efficiency AC/DC and DC/DC power conversion where fast recovery, low forward loss, and reliability under thermal stress are essential.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the SFT14G?

The SFT14G has a V_RRM of 200 V, as confirmed in the Absolute Maximum Ratings table for the SFT14G row. This value defines the highest reverse voltage the diode can block repeatedly without breakdown and is critical for selecting appropriate safety margins in flyback or boost converter designs. The SFT14G is part of the SFT11G–SFT18G series where "14" corresponds to 200 V (SFT11G = 50 V, SFT12G = 100 V, ..., SFT14G = 200 V).

What is the forward voltage (V_F) of the SFT14G under standard operating conditions?

The SFT14G exhibits a maximum forward voltage of 0.95 V at I_F = 1 A and T_J = 25°C, per the Electrical Specifications table. This value is measured using a 0.3 ms pulse test and represents the conduction loss under nominal load. At elevated junction temperatures (e.g., 125°C), V_F decreases slightly due to negative temperature coefficient of silicon diodes, but system-level thermal design must still ensure T_J stays within –55°C to +150°C limits.

Does the SFT14G have AEC-Q101 qualification?

The base SFT14G is not AEC-Q101 qualified; however, the AEC-Q101-compliant version is designated SFT14GH (with "H" suffix), as stated in the Ordering Information section. SFT14GH undergoes additional stress testing including temperature cycling, humidity bias, and mechanical shock per AEC-Q101 Rev D. For automotive under-hood applications requiring qualification, SFT14GH-not SFT14G-must be specified and sourced.

What is the reverse recovery time (t_rr) of the SFT14G, and how is it tested?

The SFT14G has a maximum reverse recovery time (t_rr) of 35 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, as specified in the Electrical Specifications table. This test uses a standardized double-pulse setup (Fig.6) that captures the time from forward conduction to full reverse blocking. The 35 ns value enables reliable operation in switching power supplies up to ~500 kHz before reverse recovery losses dominate efficiency.

What package type does the SFT14G use, and what are its key mechanical features?

The SFT14G uses the TS-1 surface-mount package: a compact, molded plastic case measuring 3.7 mm × 2.7 mm × 1.25 mm with pure tin-plated leads. It complies with UL 94V-0 flammability, passes JESD201 Class 2 whisker testing, and features cathode polarity indicated by a visible band. The TS-1 footprint is significantly smaller than DO-214AC, enabling high-density layouts without sacrificing 1 A current rating or thermal performance (R_θJA = 100 °C/W).