Taiwan Semiconductor Corporation SFT18G

Overview

SFT18G from Taiwan Semiconductor is a 600V, 1A super fast rectifier diode in TS-1 package, featuring 1.70V forward voltage at 1A/25°C, 35ns reverse recovery time, and 10pF junction capacitance - optimized for high-frequency switching mode power supplies and freewheeling paths in automotive-grade DC-DC converters.

For engineers reviewing the SFT18G datasheet, SFT18G pinout, SFT18G application, or SFT18G equivalent, key selection criteria include V_RRM = 600V, I_F = 1A, t_rr = 35ns, thermal resistance R_θJA = 100°C/W, and AEC-Q101 qualification availability (SFT18GH variant), all critical for reliable operation in compact, thermally constrained 48V–400V industrial and automotive power stages.

Technical Context

The SFT18G employs a single-die silicon planar epitaxial structure optimized for super-fast recovery, with minority carrier lifetime controlled to achieve t_rr ≤ 35ns under I_F = 0.5A, I_R = 1.0A, and I_rr = 0.25A test conditions. Its 600V V_RRM rating supports primary-side rectification in offline SMPS and boost PFC stages.

Thermal design is constrained by R_θJA = 100°C/W in free-air, requiring careful PCB copper area allocation; the TS-1 package uses pure tin-plated leads compliant with J-STD-002 and JESD201 Class 2 whisker testing, supporting lead-free reflow profiles.

Key Specifications

Pinout & Package

TS-1 package: surface-mount, single-ended anode-cathode configuration with cathode band marking; dimensions per Taiwan Semiconductor Package Outline Drawing TS-1; weight ≈ 0.200g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH1L60S and ES1J, the SFT18G offers identical t_rr and V_F to ES1J but adds AEC-Q101 qualification path (via SFT18GH), while delivering tighter V_F than STTH1L60S - making it optimal for automotive-qualified, thermally constrained 1A rectification where consistency across voltage grades (SFT11G–SFT18G) simplifies BOM management.

Availability

SFT18G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial SMPS secondary rectification, and LED driver boost stage output rectification requiring stable component supply, long-lifecycle sourcing, and traceable manufacturing origin.

Supply support for SFT18G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The SFT11G–SFT18G series belongs to TSC's Super Fast Rectifier product line, engineered specifically for high-efficiency, high-reliability switching power conversion in space- and thermally-constrained applications where fast recovery and low leakage are essential.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the SFT18G?

The SFT18G has a V_RRM rating of 600V, confirmed in the Absolute Maximum Ratings table of Taiwan Semiconductor's SFT11G–SFT18G datasheet (Version J2104). This value is specific to the SFT18G variant and reflects its position as the highest-voltage member of the SFT1xG family. The SFT18G must not be operated beyond this reverse voltage to ensure long-term reliability and avoid avalanche breakdown.

What is the forward voltage (V_F) of the SFT18G at rated current?

The SFT18G exhibits a typical forward voltage of 1.70V at I_F = 1A and T_J = 25°C, as specified in the Electrical Specifications table. This value is measured under pulsed conditions (PW = 0.3ms) and increases with junction temperature - at 125°C, V_F rises to approximately 1.45V due to negative temperature coefficient behavior typical of silicon PN junctions.

Does the SFT18G have AEC-Q101 qualification?

The base SFT18G is not AEC-Q101 qualified; however, the SFT18GH variant - indicated by the "H" suffix in the ordering code - is explicitly qualified per AEC-Q101. This qualification covers stress tests including HTGB, HTRB, temperature cycling, and mechanical shock, making SFT18GH suitable for automotive under-hood applications where the standard SFT18G would not be approved.

What package type does the SFT18G use and what are its key mechanical features?

The SFT18G uses the TS-1 surface-mount package, defined in Taiwan Semiconductor's Package Outline Drawing. Key mechanical features include pure tin-plated leads compliant with J-STD-002 solderability standards, UL 94V-0 flammability-rated molding compound, cathode polarity indicated by a visible band, and compliance with JESD201 Class 2 whisker testing - all documented in the Mechanical Data section of the SFT11G–SFT18G datasheet.

What is the reverse recovery time (t_rr) specification for the SFT18G?

The SFT18G has a maximum reverse recovery time of 35ns, measured under the conditions I_F = 0.5A, I_R = 1.0A, and I_rr = 0.25A, as stated in the Electrical Specifications table. This t_rr value is consistent across SFT17G and SFT18G variants and enables efficient operation in high-frequency switching power supplies up to 500 kHz, provided layout parasitics are minimized.