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Infineon Technologies SI3443DV
- Part No.:
- SI3443DV
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3443DV.pdf
- Description:
- MOSFET P-CH 20V 4.4A MICRO6
- Quantity:
- Payment:
- Shipping:
Inventory:4,639
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Product details
Overview
SI3443DV from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET power MOSFET in TSOP-6 package, rated for -20 V VDS, 0.065 Ω RDS(on) at VGS = -4.5 V and ID = -4.4 A, with -55 °C to +150 °C operating junction temperature. It delivers ultra-low on-resistance and high current density for compact battery management and load switching circuits.
For engineers reviewing the SI3443DV datasheet, SI3443DV pinout, SI3443DV application, or SI3443DV equivalent, this device is selected for space-constrained DC-DC load switches, USB port power control, and reverse-polarity protection where low RDS(on), fast switching, and thermal efficiency are critical design requirements.
Technical Context
This MOSFET operates as a single N-type channel depletion-free P-channel switch with gate threshold voltage of -0.60 V to -1.2 V and forward transconductance of 12 S. Its body diode exhibits VSD = -1.2 V at IS = -1.7 A and trr = 51–77 ns, enabling efficient synchronous rectification and flyback energy recovery.
The device uses advanced silicon processing to achieve 60% lower RDS(on) than comparable SOT-23 P-MOSFETs in the same footprint. Its TSOP-6 leadframe design reduces thermal resistance to 62.5 °C/W (Junction-to-Ambient), supporting up to 300% higher current handling versus SOT-23 under identical PCB conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for 20 V rail-level load switching |
| RDS(on) | 0.065 Ω @ VGS = -4.5 V, ID = -4.4 A - Enables <100 mW conduction loss at 4 A load current |
| ID (continuous) | -4.4 A @ TA = 25°C - Supports sustained 4.4 A load current without heatsink on FR-4 board |
| EAS | 31 mJ - Withstands single-pulse inductive energy up to 31 mJ during load dump or relay de-energization |
| Qg | 11–15 nC - Low gate charge enables fast turn-on/off with minimal driver power overhead |
| trr | 51–77 ns - Short reverse recovery time minimizes switching losses in high-frequency DC-DC stages |
| RθJA | 62.5 °C/W - Thermal resistance allows ~1.3 W dissipation at 70°C ambient before derating |
Pinout & Package
TSOP-6 surface-mount package with exposed drain pad for enhanced thermal performance; 1.6 mm × 2.9 mm footprint, 0.95 mm height, gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main high-side current path; internally connected to exposed thermal pad for heat sinking |
| 2 (G) | Gate | Control input; requires -2.5 V to -12 V drive relative to source for full enhancement |
| 3 (S) | Source | Reference node for gate drive and load return; tied to system ground in high-side switch configuration |
| 4 (D) | Drain | Parallel drain connection to Pin 1; improves current sharing and thermal spreading |
| 5 (D) | Drain | Third drain terminal; electrically identical to Pins 1 and 4, enhances thermal conduction |
| 6 (S) | Source | Second source terminal; provides low-inductance return path for high-di/dt loads |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.065 Ω at -4.5 V gate drive - Reduces conduction loss by >60% vs. SOT-23 equivalents |
| Optimized TSOP-6 leadframe | 60% lower RDS(on) and 300% higher current capacity than SOT-23 - Saves PCB area while increasing power density |
| Fast body diode | trr = 51–77 ns, Qrr = 30–44 nC - Minimizes dead-time losses in synchronous buck or OR-ing applications |
| Robust avalanche rating | EAS = 31 mJ - Handles inductive kickback without external snubbers in motor or solenoid drivers |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in portable Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling battery discharge path; activated only when polarity and voltage are valid. Use Value: 0.065 Ω RDS(on) limits voltage drop to <300 mV at 4.4 A, preserving battery runtime and thermal margin. | Use Scenario: Hot-swap power control for USB Type-C ports with programmable current limiting. IC Role / Device Role / Timing Role: Load switch isolating downstream VBUS from host supply during plug/unplug events. Use Value: Fast 51 ns body diode recovery prevents backfeed during dynamic insertion, meeting USB PD 3.0 timing compliance. |
| Industrial Sensor Node Power Gating | Automotive Body Control Module (BCM) |
Use Scenario: Duty-cycled power gating for low-power wireless sensor nodes in IIoT edge devices. IC Role / Device Role / Timing Role: Low-quiescent-current P-MOSFET enabling microamp-level sleep mode with zero leakage path. Use Value: Gate leakage <100 nA at -12 V ensures <1 µA total off-state current, extending 10-year battery life. | Use Scenario: Load switching for interior lighting, mirror heaters, and door lock actuators in 12 V automotive systems. IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche energy handling for inductive load transients. Use Value: 31 mJ EAS withstands ISO 7637-2 pulse 5a without failure, eliminating need for external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.055 Ω @ -4.5 V but VDS = -20 V; slightly lower gate charge (9.5 nC) | Same TSOP-6 footprint; tighter RDS(on) tolerance but lower EAS (22 mJ) | Preferred for ultra-low-loss 4 A switching where avalanche stress is minimal |
| AO3401 | RDS(on) = 0.085 Ω @ -4.5 V; higher thermal resistance (83 °C/W); no specified EAS | SOT-23-3 package - smaller footprint but 30% lower current capability and no avalanche rating | Acceptable for cost-sensitive, non-automotive 2 A applications with adequate layout cooling |
Compared with DMG2305UVT-7 and AO3401, SI3443DV offers the best balance of low RDS(on), robust 31 mJ avalanche rating, and proven TSOP-6 thermal performance - making it optimal for industrial and automotive load-switching where reliability under transient stress is mandatory.
Availability
SI3443DV is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, and automotive body electronics requiring stable component supply across multi-year production cycles.
Supply support for SI3443DV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon-based power devices and wide-bandgap solutions.
The SI3443DV belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in portable, automotive, and industrial power systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The SI3443DV supports -3.5 A continuous drain current at TA = 70°C with VGS = -4.5 V. This is determined by its 1.3 W power dissipation limit at that temperature and 0.065 Ω RDS(on), resulting in ~0.79 W conduction loss at -3.5 A - staying within safe thermal margins on standard FR-4 PCB.
Can SI3443DV be used in high-side switch configurations with 3.3 V logic control?
No - SI3443DV requires a gate drive voltage ≤ -2.5 V (minimum threshold) relative to source, so 3.3 V logic alone cannot fully enhance it. A negative bias generator or level-shifting circuit is required to deliver -4.5 V to -12 V gate drive referenced to the source node in high-side operation.
Does SI3443DV include integrated ESD protection?
The SI3443DV does not integrate dedicated ESD protection circuitry. Its gate oxide is rated for ±12 V VGS, and it meets HBM ESD classification per JEDEC JESD22-A114 (≥2 kV). External gate resistors and TVS diodes are recommended for systems exposed to frequent human contact or harsh environments.
How does the TSOP-6 package improve thermal performance over SOT-23?
The TSOP-6 package uses a custom copper leadframe with three drain terminals and an exposed thermal pad, reducing RθJA to 62.5 °C/W versus ~120–150 °C/W for standard SOT-23. This allows nearly 3× higher current handling (4.4 A vs. ~1.5 A) at the same board area and ambient temperature, verified via JEDEC JESD51-7 testing.
SI3443DV Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1079 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro6™(TSOP-6)
SI3443DV FAQ
1.How can I place an order for SI3443DV through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3443DV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3443DV reliable?
The price and inventory of SI3443DV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3443DV is usually 5 days.
3.What payment methods are accepted for SI3443DV?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3443DV transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3443DV?
SI3443DV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3443DV order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3443DV?
For technical support, including SI3443DV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3443DV requirements.
6.How does Aetrix verify that SI3443DV is sourced from the original manufacturer or authorized distributors?
All SI3443DV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3443DV meets industry standards.
7.What is the process for return or replacement of SI3443DV?
All SI3443DV units undergo pre-shipment inspection (PSI). If there is an issue with SI3443DV, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3443DV part is unused and in its original packaging.
Return procedure for SI3443DV:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI3443DV Tags
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