Infineon Technologies SI3443DVTR

Overview

SI3443DVTR from Vishay Siliconix (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery management switching. It features -20 V V_DS, 0.065 Ω R_DS(on) at V_GS = -4.5 V, -4.4 A continuous drain current, TSOP-6 surface-mount package, and integrated body diode with -1.2 V forward voltage at -1.7 A - deployed in portable power path control.

For engineers reviewing the SI3443DVTR datasheet, SI3443DVTR pinout, SI3443DVTR application, or SI3443DVTR equivalent, key selection criteria include verified R_DS(on) at low gate drive (-2.5 V rated), thermal resistance (62.5 °C/W), avalanche energy (31 mJ), and TSOP-6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device operates as a single P-channel power switch with gate threshold voltage between -0.60 V and -1.2 V, enabling robust turn-on from low-voltage logic (e.g., 2.5 V/3.3 V microcontrollers). Its R_DS(on) remains stable across temperature (normalized to 1.0 at 25 °C, ~1.8 at 150 °C), supporting reliable operation in battery-powered industrial and consumer systems.

The integrated source-drain body diode exhibits 51–77 ns reverse recovery time and 30–44 nC Q_rr, confirming suitability for synchronous rectification and bidirectional current handling in DC-DC converters and USB power delivery circuits where controlled diode conduction is required.

Key Specifications

Pinout & Package

TSOP-6 package: ultra-thin, leadless surface-mount outline with exposed drain pad for enhanced thermal performance and 60% lower R_DS(on) vs. comparable SOT-23 devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMG2305UVT-7 and AO3401, SI3443DVTR delivers optimal balance of low R_DS(on), proven avalanche robustness, and TSOP-6 thermal performance - making it preferred for industrial-grade battery and power-path applications demanding reliability above peak efficiency.

Availability

SI3443DVTR is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power path control, hot-swap modules, and industrial sensor power gating requiring stable component supply and long-term manufacturability.

Supply support for SI3443DVTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

SI3443DVTR belongs to the TrenchFET® P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in portable and space-constrained electronics.

FAQ

What is the maximum safe operating voltage for SI3443DVTR?

The absolute maximum drain-to-source voltage (V_DS) is -20 V, with breakdown voltage guaranteed at -20 V (V_GS = 0 V, I_D = -250 µA). Operation beyond this rating risks irreversible avalanche failure, even with transient clamping. Derating is recommended for reliability in automotive or industrial environments with voltage transients.

Can SI3443DVTR be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range (-0.60 V to -1.2 V) and guaranteed turn-on at V_GS = -2.5 V allow direct connection to 3.3 V logic outputs configured as open-drain or active-low drivers. No external level shifter is needed, provided the MCU can sink ≥15 nC gate charge within required switching times.

Does SI3443DVTR include an integrated Schottky diode?

No - it contains a standard silicon p-n junction body diode, not a Schottky. The diode has V_SD = -1.2 V at -1.7 A and t_rr = 51–77 ns. While functional for reverse-current blocking and synchronous rectification, it lacks Schottky's zero-recovery advantage and higher forward voltage than optimized Schottky alternatives.

How does the TSOP-6 package improve thermal performance over SOT-23?

The TSOP-6 uses a custom leadframe with an exposed drain pad that provides direct thermal conduction to the PCB copper plane, achieving R_θJA = 62.5 °C/W - 3× better than typical SOT-23 (≈200 °C/W). This enables nearly 300% higher current handling (4.4 A vs. ~1.5 A) at the same board area and ambient temperature.