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Infineon Technologies SI3443DVTRPBF
- Part No.:
- SI3443DVTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3443DVTRPBF.pdf
- Description:
- MOSFET P-CH 20V 4.4A MICRO6
- Quantity:
- Payment:
- Shipping:
Inventory:4,295
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Product details
Overview
SI3443DVTRPBF from Vishay Siliconix (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery management in space-constrained portable electronics. It features -20 V VDS, 0.065 Ω RDS(on) at VGS = -4.5 V, -4.4 A continuous drain current, and TSOP-6 surface-mount package optimized for PCB area reduction and thermal performance.
For engineers reviewing the SI3443DVTRPBF datasheet, SI3443DVTRPBF pinout, SI3443DVTRPBF application, or SI3443DVTRPBF equivalent, key selection criteria include its ultra-low on-resistance at low gate drive (-2.5 V rated), avalanche energy rating (31 mJ), body diode reverse recovery characteristics (trr = 51–77 ns), and thermal resistance (RθJA = 62.5 °C/W).
Technical Context
This device operates as a single P-channel power switch with a negative threshold voltage (-0.6 to -1.2 V) enabling direct logic-level control from 2.5 V/3.3 V microcontrollers. Its low RDS(on) and reduced gate charge (Qg = 11–15 nC) support fast switching in DC-DC load switches and reverse-polarity protection circuits.
The integrated body diode exhibits low forward voltage (-1.2 V at -1.7 A) and controlled reverse recovery (Qrr = 30–44 nC), making it suitable for synchronous rectification and bidirectional current paths where diode conduction is unavoidable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-side high-side switching in 12 V or lower systems |
| RDS(on) | 0.065 Ω @ VGS = -4.5 V - Enables <100 mW conduction loss at 4 A, critical for thermal budget in sealed enclosures |
| ID (continuous) | -4.4 A @ TA = 25°C - Supports sustained 5 W load switching without forced cooling on FR-4 PCB |
| EAS | 31 mJ - Withstands inductive turn-off transients in motor or solenoid driver applications |
| trr | 51–77 ns - Limits switching losses and EMI during body-diode commutation in buck or OR-ing configurations |
| Qg | 11–15 nC - Reduces gate driver power requirement and enables >1 MHz operation with low-RG |
| RθJA | 62.5 °C/W - Predicts ~125°C junction rise at full 2 W dissipation on standard 1 oz copper FR-4 |
Pinout & Package
TSOP-6 (PD-95240) thermally enhanced surface-mount package with exposed drain paddle for improved heat transfer. Lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main high-current path; internally connected to exposed paddle for thermal conduction to PCB |
| 2 (G) | Gate | Control input; requires negative VGS for turn-on; low Qg minimizes drive loss |
| 3 (S) | Source | Reference node for gate drive and load return; tied to system ground in high-side configuration |
| 4 (D) | Drain | Parallel drain connection; electrically identical to Pin 1 for current sharing and thermal spreading |
| 5 (D) | Drain | Third drain terminal; enhances current capacity and reduces package inductance |
| 6 (D) | Drain | Fourth drain terminal; completes low-inductance, low-resistance drain path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.065 Ω at -4.5 V gate drive - 60% lower than comparable SOT-23 devices, enabling higher current density |
| Logic-level compatible | -2.5 V rated threshold - Direct interface with 2.5 V/3.3 V GPIO without level-shifting circuitry |
| Enhanced thermal design | TSOP-6 with exposed drain paddle - Achieves 300% higher current handling vs. SOT-23 under identical board conditions |
| Robust avalanche capability | 31 mJ single-pulse energy - Ensures reliability during inductive load disconnection without external snubbers |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for wearables and medical sensors. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated only when polarity and voltage are valid. Use Value: Low RDS(on) minimizes voltage drop across protection FET, preserving battery runtime and accuracy of fuel gauging. | Use Scenario: Hot-swap and fault-isolation switching in USB-C PD 3.0 power source ports. IC Role / Device Role / Timing Role: Load switch enabling/disabling 5–20 V power delivery based on CC line negotiation and fault detection. Use Value: Fast turn-off (tf ≤ 100 ns) and low Qgd prevent voltage overshoot during short-circuit events, meeting USB PD safety timing requirements. |
| Industrial Sensor Node Power Gating | POS Terminal Power Sequencing |
Use Scenario: Duty-cycled power gating of RF transceivers and analog front-ends in battery-powered IIoT nodes. IC Role / Device Role / Timing Role: Low-quiescent-current enable switch isolating subsystems during sleep mode; driven by MCU GPIO. Use Value: -2.5 V gate threshold allows direct 3.3 V MCU control, eliminating level shifter and reducing BOM count and leakage paths. | Use Scenario: Controlled power-up sequencing of display, printer, and payment modules in point-of-sale terminals. IC Role / Device Role / Timing Role: Independent power rail switch ensuring proper voltage ramp order and preventing backfeed between isolated domains. Use Value: Avalanche rating and low Coss (220 pF) suppress transient coupling during hot-plug events, maintaining system stability during module insertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ -4.5 V; higher ID = -4.8 A; smaller SOT-23-6 footprint | Limited thermal mass; unsuitable for >2 W continuous dissipation without heatsinking | Prefer for compact, low-power designs where PCB area is more constrained than thermal margin |
| SI2305DS-T1-E3 | RDS(on) = 0.075 Ω @ -4.5 V; lower EAS = 15 mJ; same TSOP-6 package | Reduced avalanche robustness limits use in inductive load switching | Choose when cost sensitivity outweighs need for high-energy transient immunity |
Compared with DMG2305UVT-7 and SI2305DS-T1-E3, SI3443DVTRPBF delivers superior thermal performance via its optimized TSOP-6 leadframe and highest avalanche energy rating, making it the preferred choice for industrial-grade load switching where reliability under electrical stress is non-negotiable.
Availability
SI3443DVTRPBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, industrial sensor nodes, and POS terminal power sequencing requiring stable component supply and long-term lifecycle assurance.
Supply support for SI3443DVTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The Si3443D series belongs to Vishay's logic-level P-channel HEXFET® portfolio, engineered specifically for space-constrained, high-efficiency load switching in portable and battery-powered applications.
FAQ
What is the maximum gate-to-source voltage rating for SI3443DVTRPBF?
The absolute maximum VGS is ±12 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to -10 V maximum in negative direction and +0.3 V maximum in positive direction, per the datasheet's safe operating area constraints and gate leakage specifications.
Can SI3443DVTRPBF be used in high-frequency PWM applications above 500 kHz?
Yes - its low total gate charge (11–15 nC) and fast switching times (td(off) ≤ 100 ns, tf ≤ 100 ns) support efficient operation up to 1 MHz in load-switching topologies. However, layout parasitics and gate driver strength become dominant loss factors above 500 kHz and must be carefully managed.
Does SI3443DVTRPBF require a gate resistor for stability?
A small gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 152 pF) and PCB trace inductance. This improves EMI performance and prevents false turn-on due to dv/dt coupling, especially in high-noise industrial environments.
How does the body diode performance affect reverse-current protection in OR-ing applications?
The body diode has VSD = -1.2 V at -1.7 A and trr = 51–77 ns. In OR-ing, this forward voltage causes ~1.2 V dropout during reverse conduction, while fast recovery minimizes shoot-through risk during switchover. For lowest loss, pair with an external Schottky if reverse conduction is frequent.
SI3443DVTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1079 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro6™(TSOP-6)
SI3443DVTRPBF FAQ
1.How can I place an order for SI3443DVTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3443DVTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3443DVTRPBF reliable?
The price and inventory of SI3443DVTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3443DVTRPBF is usually 5 days.
3.What payment methods are accepted for SI3443DVTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3443DVTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3443DVTRPBF?
SI3443DVTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3443DVTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3443DVTRPBF?
For technical support, including SI3443DVTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3443DVTRPBF requirements.
6.How does Aetrix verify that SI3443DVTRPBF is sourced from the original manufacturer or authorized distributors?
All SI3443DVTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3443DVTRPBF meets industry standards.
7.What is the process for return or replacement of SI3443DVTRPBF?
All SI3443DVTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with SI3443DVTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3443DVTRPBF part is unused and in its original packaging.
Return procedure for SI3443DVTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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