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Infineon Technologies SI4410DYPBF
- Part No.:
- SI4410DYPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4410DYPBF.pdf
- Description:
- MOSFET N-CH 30V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,399
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Product details
Overview
SI4410DYPBF from Vishay Siliconix (formerly International Rectifier) is an N-channel logic-level power MOSFET in SO-8 package, rated for 30 V VDS, 10 A continuous drain current at 25°C, and 0.0135 Ω RDS(on) at VGS = 10 V. It features low gate charge (30–45 nC), fast switching (tr = 7.7 ns), and is optimized for DC-DC converters, load switching, and battery-powered motor control.
For engineers reviewing the SI4410DYPBF datasheet, SI4410DYPBF pinout, SI4410DYPBF application, or SI4410DYPBF equivalent, key selection criteria include its 30 V breakdown voltage, sub-14 mΩ on-resistance at 10 V drive, SO-8 thermal performance (RθJA = 50 °C/W), avalanche energy rating (400 mJ), and logic-level gate compatibility down to 4.5 V.
Technical Context
This MOSFET employs advanced TrenchFET process technology to achieve low RDS(on) and low Qg, enabling high-efficiency synchronous rectification and compact power stage design. Its body diode exhibits trr = 50–80 ns and VSD = 0.7–1.1 V at 2.3 A, supporting moderate-frequency freewheeling in buck converters.
The device operates across –55°C to +150°C junction temperature, with a positive V(BR)DSS temperature coefficient (0.029 V/°C) and gate threshold stability (VGS(th) = 1.0 V typ., ±0.5 V variation over temperature). Thermal derating is linear at 0.02 W/°C above 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V/24 V system-side switching |
| RDS(on) | 0.0135 Ω @ VGS = 10 V - Enables ≤135 mW conduction loss at 10 A |
| ID (25°C) | ±10 A - Continuous current capability suitable for medium-power loads |
| Qg | 30–45 nC - Low gate drive energy reduces controller loading and switching loss |
| tr/tf | 7.7 ns / 44 ns - Supports >1 MHz PWM operation with controlled EMI |
| EAS | 400 mJ - Withstands single-pulse inductive energy without failure |
| RθJA | 50 °C/W - Limits junction rise to ≤125°C at 2.5 W dissipation on FR4 board |
Pinout & Package
SO-8 surface-mount package with copper leadframe, JEDEC MS-012AA compliant, footprint optimized for thermal relief and solderability. Dimensions: 4.9 × 6.0 × 1.75 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Internally paralleled pins for low-inductance, high-current path to PCB drain pad |
| 6 | Gate (G) | Control input requiring ≤45 nC charge; logic-level compatible (VGS(th) = 1.0 V) |
| 7, 8 | Source (S) | Return path for load current; dual pins reduce source inductance and improve switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V (RDS(on) = 0.015 Ω), eliminating need for gate boosters in 5 V systems |
| Low RDS(on) | 13.5 mΩ at 10 V enables <1% conduction loss in 12 V/10 A power rails |
| Enhanced thermal performance | Copper leadframe SO-8 delivers >800 mW power dissipation on standard FR4, exceeding typical SO-8 limits |
| Robust avalanche rating | 400 mJ single-pulse EAS supports reliable operation under inductive turn-off stress |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V/5 V conversion in portable SSDs and embedded controllers. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves >94% efficiency at 5 A due to 13.5 mΩ RDS(on) and fast 7.7 ns rise time minimizing overlap loss. | Use Scenario: Inrush-limited 20 V/3 A power path control for USB-C PD sink applications. IC Role / Device Role: High-side load switch with integrated gate driver interface. Use Value: Logic-level gate allows direct MCU GPIO control; low Qg ensures <10 µs turn-on with minimal drive circuitry. |
| Brushed DC Motor Driver (H-Bridge Low-Side) | Battery Protection Circuit (Charge/Discharge FET) |
Use Scenario: 24 V, 8 A brushed motor control in cordless power tools and robotics. IC Role / Device Role: Low-side switch in half-bridge configuration with PWM frequency up to 500 kHz. Use Value: Avalanche-rated EAS = 400 mJ absorbs back-EMF spikes during PWM commutation without snubbers. | Use Scenario: Primary discharge FET in 3S Li-ion battery packs (≤12.6 V) with overcurrent protection. IC Role / Device Role: Main current path switch controlled by battery management IC. Use Value: 0.0135 Ω RDS(on) minimizes voltage drop during 10 A discharge, preserving pack runtime and thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PbF | RDS(on) = 0.012 Ω @ 10 V; higher Qg = 52 nC; same SO-8 package | Slightly lower conduction loss but slower switching due to higher gate charge | Prefer when conduction loss dominates; avoid in >500 kHz designs |
| DMN3020LSD-13 | RDS(on) = 0.014 Ω @ 10 V; Qg = 28 nC; dual-N in SO-8 | Integrated complementary pair enables half-bridge in single package | Select only when dual-FET topology is required; not a drop-in replacement |
Compared with IRF7470PbF and DMN3020LSD-13, SI4410DYPBF offers optimal balance of low RDS(on), moderate Qg, and proven avalanche ruggedness-making it preferred for discrete high-side/low-side switching where thermal and EMI constraints coexist.
Availability
SI4410DYPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C load switching, brushed motor drivers, and battery protection circuits requiring stable component supply and long-term industrial availability.
Supply support for SI4410DYPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.
SI4410DYPBF belongs to the TrenchFET® Gen IV family, engineered for high-efficiency, low-voltage power conversion in space-constrained and thermally demanding environments such as portable electronics and automotive body control modules.
FAQ
What is the maximum safe operating frequency for SI4410DYPBF in a hard-switched buck converter?
SI4410DYPBF supports hard-switched operation up to 1 MHz, validated by its 7.7 ns rise time and 44 ns fall time. At 500 kHz with 10 A load, total switching loss remains below 0.3 W when driven with 10 V and RG = 6 Ω, assuming adequate PCB layout and thermal management.
Can SI4410DYPBF be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (0.0002 Ω/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance and symmetrical PCB routing; tested configurations show <10% current imbalance at 20 A total with two devices.
Does SI4410DYPBF require a gate resistor for ESD or dv/dt immunity?
A 10–22 Ω gate resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions. The device's 5.0 V/ns dv/dt rating and integrated gate oxide protection make it robust, but external resistance improves noise immunity in noisy 12 V/24 V environments.
Is the SO-8 package of SI4410DYPBF RoHS-compliant and lead-free?
Yes-SI4410DYPBF carries the "PbF" suffix indicating full RoHS compliance and lead-free termination. The device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with unlimited floor life at ≤30°C/60% RH and reflow profile compatible with SnAgCu solder paste.
SI4410DYPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1585 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
SI4410DYPBF FAQ
1.How can I place an order for SI4410DYPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4410DYPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4410DYPBF reliable?
The price and inventory of SI4410DYPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4410DYPBF is usually 5 days.
3.What payment methods are accepted for SI4410DYPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4410DYPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4410DYPBF?
SI4410DYPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4410DYPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4410DYPBF?
For technical support, including SI4410DYPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4410DYPBF requirements.
6.How does Aetrix verify that SI4410DYPBF is sourced from the original manufacturer or authorized distributors?
All SI4410DYPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4410DYPBF meets industry standards.
7.What is the process for return or replacement of SI4410DYPBF?
All SI4410DYPBF units undergo pre-shipment inspection (PSI). If there is an issue with SI4410DYPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4410DYPBF part is unused and in its original packaging.
Return procedure for SI4410DYPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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