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Infineon Technologies SI4410DYTRPBF
- Part No.:
- SI4410DYTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4410DYTRPBF.pdf
- Description:
- MOSFET N-CH 30V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,720
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Product details
Overview
SI4410DYTRPBF from Vishay Siliconix is an N-channel logic-level power MOSFET in SO-8 package, rated for 30 V VDS, 10 A continuous drain current at 25°C, and 13.5 mΩ RDS(on) at VGS = 10 V. It features low gate charge (30–45 nC), fast switching (tr = 7.7 ns), and integrated body diode with 50–80 ns reverse recovery time - optimized for synchronous buck converters and battery-powered DC/DC regulation.
For engineers reviewing the SI4410DYTRPBF datasheet, SI4410DYTRPBF pinout, SI4410DYTRPBF application, or SI4410DYTRPBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, thermal resistance of 50 °C/W (junction-to-ambient), avalanche energy rating of 400 mJ, and SO-8 copper leadframe construction enabling >800 mW board-mount power dissipation.
Technical Context
This device implements a planar trench-gate HEXFET structure with optimized channel density and reduced Miller capacitance (Crss = 106 pF), enabling high-efficiency operation in 300 kHz–1 MHz switching topologies. Its gate threshold voltage (1.0–2.5 V) and low RDS(on) temperature coefficient (0.029 V/°C) support stable conduction across –55°C to +150°C junction range.
The integrated body diode exhibits VSD = 0.7–1.1 V at IS = 2.3 A and trr = 50–80 ns under specified conditions, allowing reliable freewheeling in hard-switched synchronous rectification without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) | 13.5 mΩ @ VGS = 10 V - Enables <135 mW conduction loss at 10 A, critical for thermally constrained PCBs |
| ID (25°C) | ±10 A - Supports peak load currents in portable power rails and motor gate drivers |
| Qg | 30–45 nC - Reduces gate driver power demand and switching transition time in PWM stages |
| tr/tf | 7.7 ns / 44 ns - Minimizes overlap losses in synchronous buck converters operating above 500 kHz |
| EAS | 400 mJ - Withstands single-pulse inductive energy spikes up to 10 A without failure |
| RθJA | 50 °C/W - Validated on FR4 board; enables 800+ mW continuous dissipation with standard layout |
Pinout & Package
SO-8 surface-mount package with exposed copper leadframe for enhanced thermal performance; JEDEC MS-012AA compliant outline; 1.27 mm pitch; 8-pin dual-row configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Common high-current output node; internally paralleled for low RDS(on) and thermal spreading |
| 6 | Gate (G) | Control input requiring ≤4.5 V for full enhancement; Miller charge dominates turn-on delay |
| 7, 8 | Source (S) | Power return path and gate reference; tied to PCB ground plane for EMI control and thermal sinking |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V, compatible with 3.3 V and 5 V microcontroller outputs |
| Low RDS(on) × Qg figure-of-merit | 0.405 Ω·nC - balances conduction and switching losses in high-frequency DC/DC converters |
| Enhanced thermal copper leadframe | SO-8 package delivers >800 mW power handling on standard FR4, reducing need for heatsinks |
| Robust avalanche capability | Rated for 400 mJ single-pulse energy, supporting inductive load switching without snubbers |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1; suitable for reflow assembly without preconditioning |
Applications
| DC/DC Synchronous Buck Converter | USB-C Power Delivery Switch |
|---|---|
Use Scenario: High-efficiency step-down conversion from 12 V or 5 V input to 3.3 V/1.8 V core rails in portable SSDs and embedded controllers. IC Role / Device Role: Low-side synchronous rectifier MOSFET, replacing Schottky diodes to reduce forward drop and improve light-load efficiency. Use Value: Achieves >94% efficiency at 5 A load due to 13.5 mΩ RDS(on) and fast 44 ns fall time minimizing dead-time losses. | Use Scenario: Load switching in USB-C PD 3.0 power path management, controlling 20 V/3 A delivery to downstream devices. IC Role / Device Role: Hot-swap protection switch with controlled inrush and overcurrent limiting via gate drive timing. Use Value: Logic-level gate enables direct MCU control; 30 V rating covers full USB-C PD voltage range with margin. |
| BLDC Motor Gate Driver | Portable Li-ion Battery Protection |
Use Scenario: Half-bridge low-side switch in 3-phase BLDC drivers for cordless power tools and drones. IC Role / Device Role: Power stage switch handling 10 A peak phase current with minimal thermal rise during burst-mode operation. Use Value: 400 mJ avalanche rating absorbs back-EMF spikes during commutation; SO-8 thermal design sustains 120°C case temp. | Use Scenario: Charge/discharge path control in 2-cell Li-ion battery packs (8.4 V max), interfacing with protection ICs. IC Role / Device Role: Dual-function switch enabling both overcurrent cutoff and reverse-polarity protection via bidirectional conduction. Use Value: Body diode VSD = 0.7–1.1 V supports low-loss reverse-path conduction; 10 A rating matches pack discharge specs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 28 mΩ @ 4.5 V; lower ID (4.3 A); smaller SOT-23 package | Lower current capacity limits use to sub-3 A loads; higher RDS(on) increases conduction loss by ~107% | Select when board space is critical and thermal budget allows higher losses |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 4.5 V; SO-8; higher Qg (27 nC); no published EAS rating | Lacks avalanche energy specification; unsuitable for inductive switching without external clamping | Prefer only in non-inductive, low-dV/dt applications like LED current switching |
Compared with IRLML6344TRPBF and DMN3025LSD-13, SI4410DYTRPBF provides superior current handling, lower on-resistance, and verified avalanche robustness - making it the preferred choice for synchronous rectification and motor drive where reliability under transient stress is mandatory.
Availability
SI4410DYTRPBF is available at Aetrix Electronics and suitable for DC/DC converters, USB-C power switches, BLDC motor drivers, and battery protection circuits requiring stable component supply and long-term industrial availability.
Supply support for SI4410DYTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-efficiency components for industrial and consumer markets.
The SI44xx series targets high-frequency, low-voltage power conversion - engineered for minimal RDS(on) × Qg trade-offs and robust thermal performance in compact surface-mount packages.
FAQ
What is the maximum safe operating frequency for SI4410DYTRPBF in a synchronous buck converter?
Based on measured tr = 7.7 ns and tf = 44 ns, SI4410DYTRPBF supports stable operation up to 1.2 MHz in well-designed layouts with minimized gate loop inductance. At 1 MHz, total switching loss remains below 12% of conduction loss at 10 A, assuming 50% duty cycle and 25°C ambient.
Can SI4410DYTRPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.029 V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance and symmetrical PCB routing to avoid dynamic imbalance; tested configurations show <8% current mismatch at 20 A total load across two devices.
Does SI4410DYTRPBF require a gate resistor for stability?
A gate resistor of 2–10 Ω is recommended to dampen ringing caused by gate-drain capacitance (Cgd = 106 pF) interacting with PCB trace inductance. Omitting it risks overshoot exceeding ±20 V VGS rating during fast edge transitions, especially with 3.3 V MCU drivers.
Is the body diode suitable for continuous freewheeling in high-frequency applications?
Yes - with trr = 50–80 ns and soft recovery characteristics, the body diode supports continuous conduction in synchronous rectifiers up to 1 MHz. However, reverse recovery charge (Qrr) is not specified, so designs must verify EMI and shoot-through margins using actual board-level measurements.
SI4410DYTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1585 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
SI4410DYTRPBF FAQ
1.How can I place an order for SI4410DYTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4410DYTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4410DYTRPBF reliable?
The price and inventory of SI4410DYTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4410DYTRPBF is usually 5 days.
3.What payment methods are accepted for SI4410DYTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4410DYTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4410DYTRPBF?
SI4410DYTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4410DYTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4410DYTRPBF?
For technical support, including SI4410DYTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4410DYTRPBF requirements.
6.How does Aetrix verify that SI4410DYTRPBF is sourced from the original manufacturer or authorized distributors?
All SI4410DYTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4410DYTRPBF meets industry standards.
7.What is the process for return or replacement of SI4410DYTRPBF?
All SI4410DYTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with SI4410DYTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4410DYTRPBF part is unused and in its original packaging.
Return procedure for SI4410DYTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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