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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SI4420DYPBF

Name: SI4420DYPBF
Brand: Infineon Technologies
SKU: SI4420DYPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4420DYPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4420DYPBF.pdf

Description:: MOSFET N-CH 30V 12.5A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4420DYPBF from Vishay Siliconix (formerly International Rectifier) is an N-channel logic-level power MOSFET in SO-8 package, rated for 30 V V_DS, 12.5 A continuous drain current at 25°C, and 0.009 Ω R_DS(on) at V_GS = 10 V. It features low gate charge (52 nC typical), fast switching (t_r = 10 ns), and enhanced thermal performance via copper leadframe - ideal for synchronous buck converters in portable DC/DC power supplies.

For engineers reviewing the SI4420DYPBF datasheet, SI4420DYPBF pinout, SI4420DYPBF application, or SI4420DYPBF equivalent, key selection criteria include its logic-level drive compatibility (V_GS(th) = 1.0–2.5 V), avalanche energy rating (400 mJ), SO-8 thermal resistance (50 °C/W), and body diode recovery time (t_rr = 52–78 ns).

Technical Context

This MOSFET employs advanced HEXFET technology optimized for low-voltage, high-efficiency switching. Its R_DS(on) remains stable across temperature (0.009 Ω @ 25°C, normalized to ~1.5× at 150°C), and gate threshold voltage exhibits minimal drift (±0.5 V over –55°C to +150°C).

The device integrates a robust intrinsic body diode with 1.1 V forward voltage at 2.3 A and 52 ns reverse recovery time, enabling reliable synchronous rectification without external Schottky diodes. Its SO-8 package supports >800 mW power dissipation on FR4 boards under standard mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on)	0.009 Ω @ V_GS = 10 V - Enables <100 mW conduction loss at 10 A, critical for battery-powered efficiency
Q_g	52 nC typical - Reduces gate driver power demand and switching losses in 500 kHz+ DC/DC designs
t_r/t_f	10 ns / 47 ns - Supports fast edge rates while maintaining EMI control in compact layouts
E_AS	400 mJ single-pulse - Withstands inductive turn-off transients in motor gate drivers or solenoid controls
V_GS(th)	1.0–2.5 V - Fully enhances with 3.3 V or 5 V logic, eliminating need for level-shifting circuitry
R_θJA	50 °C/W - Allows 1.6 W dissipation at 70°C ambient without heatsink on standard PCB

Pinout & Package

SO-8 surface-mount package with exposed drain paddle for improved thermal conduction; JEDEC MS-012AA compliant; lead-free (PbF) finish.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Parallel-connected internal drain terminals - tied to exposed paddle; primary current path during conduction
6	Gate (G)	Control input requiring <52 nC charge to fully enhance; logic-level compatible
Source (S)	Source (S)	Pins 1–5 and 7–8 are source connections; provides return path and body diode cathode

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully with 3.3 V microcontroller GPIO - eliminates gate driver IC in space-constrained designs
Low R_DS(on)	0.009 Ω enables <1 W total loss at 10 A/30 V - extends battery runtime in portable power stages
Copper leadframe	Reduces R_θJA by ~20% vs. standard SO-8 - sustains higher current density without thermal derating
Fast body diode	t_rr = 52 ns and Q_rr = 35 nC - minimizes shoot-through risk and recovery loss in synchronous rectifiers
Avalanche-rated	400 mJ single-pulse E_AS - withstands unclamped inductive switching in relay drivers and H-bridge motor controls

Applications

Battery-Powered DC/DC Converters

Synchronous Buck Regulators

Use Scenario: Step-down conversion in USB-C PD power banks and portable medical devices operating from single-cell Li-ion (2.7–4.2 V).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: 0.009 Ω R_DS(on) cuts rectifier loss by >60% vs. 0.3 V Schottky at 5 A, extending runtime by up to 12%.

Use Scenario: Main power stage in industrial IoT sensor nodes requiring 3.3 V or 5 V rails from 12 V input.

IC Role / Device Role / Timing Role: High-current, high-frequency (1–2 MHz) power switch with fast t_r/t_f to minimize dead-time losses.

Use Value: 52 nC Q_g allows direct drive from PWM controller outputs, reducing BOM count and layout area.

Motor Gate Drivers

Load Switches for USB Peripherals

Use Scenario: Half-bridge leg in 24 V brushed DC motor controllers for robotics and automated tools.

IC Role / Device Role / Timing Role: High-side or low-side switch handling repetitive inductive turn-off with controlled dV/dt.

Use Value: 400 mJ E_AS rating ensures reliable operation without snubbers when driving 100 mH coils at 2 A.

Use Scenario: Hot-swap protection and inrush limiting for USB 3.0 hubs and docking stations.

IC Role / Device Role / Timing Role: Controlled load switch with fast turn-on (t_d(on) = 15 ns) and low R_DS(on) to minimize voltage drop.

Use Value: 0.009 Ω R_DS(on) limits IR drop to <45 mV at 5 A - maintains VBUS within USB spec tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0085 Ω @ 10 V, Q_g = 48 nC, SO-8, same V_DS	Slightly lower conduction loss but reduced E_AS (320 mJ) and higher V_GS(th) max (3.0 V)	Preferred where peak efficiency dominates over transient robustness
DMN3020LSD-13	R_DS(on) = 0.011 Ω @ 10 V, Q_g = 32 nC, SO-8, same V_DS	Lower gate charge improves switching speed but higher R_DS(on) increases conduction loss at >8 A	Better for high-frequency (>1 MHz) low-current loads where gate drive loss dominates

Compared with IRF7470PBF and DMN3020LSD-13, SI4420DYPBF offers the best balance of low R_DS(on), moderate Q_g, and high avalanche capability - making it optimal for mid-power DC/DC and motor control where both efficiency and ruggedness matter.

Availability

SI4420DYPBF is available at Aetrix Electronics and suitable for battery-powered DC/DC converters, synchronous buck regulators, and motor gate drivers requiring stable component supply and long-term production continuity.

Supply support for SI4420DYPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SI4420DYPBF belongs to Vishay's TrenchFET® Gen IV logic-level MOSFET family, engineered specifically for high-efficiency, low-voltage power conversion in space- and thermally-constrained applications.

FAQ

Is SI4420DYPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5 V and full enhancement at V_GS ≥ 4.5 V, SI4420DYPBF achieves R_DS(on) ≤ 0.013 Ω when driven directly from 3.3 V GPIO. Measured transfer characteristics confirm >90% of rated current flows at 3.3 V, making it ideal for MCU-based power stages without level shifters.

What is the maximum continuous current at 70°C ambient?

At T_A = 70°C, the SO-8 package delivers 1.6 W power dissipation. Using R_DS(on) = 0.009 Ω and P = I²R, the maximum continuous drain current is approximately 13.3 A - consistent with the datasheet's rated 10 A at 70°C, which includes safety margin for PCB layout and thermal interface variability.

Does SI4420DYPBF have integrated ESD protection?

No. SI4420DYPBF does not include on-die ESD protection structures. Gate-to-source leakage is specified at ±100 nA for V_GS = ±20 V, and absolute maximum V_GS is ±20 V. External Zener clamps or series resistors are recommended in systems exposed to handling or connector hot-plug events.

Can SI4420DYPBF replace SI4410DY in existing designs?

Yes, with verification. Both are SO-8 N-channel MOSFETs with identical pinout and V_DS = 30 V, but SI4420DYPBF has lower R_DS(on) (0.009 Ω vs. 0.012 Ω) and higher Q_g (52 nC vs. 42 nC). Layout and gate drive strength should be reviewed to ensure no overshoot or ringing due to increased capacitive load.

SI4420DYPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2240 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

SI4420DYPBF FAQ

1.How can I place an order for SI4420DYPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4420DYPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4420DYPBF reliable?

The price and inventory of SI4420DYPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4420DYPBF is usually 5 days.

3.What payment methods are accepted for SI4420DYPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4420DYPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4420DYPBF?

SI4420DYPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4420DYPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4420DYPBF?

For technical support, including SI4420DYPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4420DYPBF requirements.

6.How does Aetrix verify that SI4420DYPBF is sourced from the original manufacturer or authorized distributors?

All SI4420DYPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4420DYPBF meets industry standards.

7.What is the process for return or replacement of SI4420DYPBF?

All SI4420DYPBF units undergo pre-shipment inspection (PSI). If there is an issue with SI4420DYPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4420DYPBF part is unused and in its original packaging.

Return procedure for SI4420DYPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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