Infineon Technologies SI4420DYTRPBF

Overview

SI4420DYTRPBF from Vishay Siliconix is an N-channel logic-level power MOSFET in SO-8 package, rated for 30 V V_DS, 12.5 A continuous drain current at 25°C, and 9 mΩ R_DS(on) at V_GS = 10 V. It features low gate charge (52 nC), fast switching (t_r = 10 ns), and is optimized for high-efficiency DC-DC converters and battery-powered motor drives.

For engineers reviewing the SI4420DYTRPBF datasheet, SI4420DYTRPBF pinout, SI4420DYTRPBF application, or SI4420DYTRPBF equivalent, key selection criteria include its 30 V breakdown voltage, 9 mΩ on-resistance at 10 V drive, SO-8 thermal performance (50 °C/W R_θJA), avalanche energy rating (400 mJ), and logic-level gate compatibility with 4.5 V microcontrollers.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low conduction loss and fast switching transitions. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with standard logic outputs, while the integrated body diode supports synchronous rectification in buck converters.

The SO-8 package uses a copper leadframe to improve thermal dissipation-enabling >800 mW power handling on FR4 boards-and supports surface-mount reflow assembly. The device's 150 °C maximum junction temperature and -55 °C minimum storage temperature support industrial and automotive under-hood environments.

Key Specifications

Pinout & Package

SO-8 package with exposed drain pads (pins 1–4 and 6–8 connected to drain), gate on pin 5, and source on pins 2–3–4 (shared with drain terminals but electrically isolated via internal layout). Thermal pad on bottom enhances PCB heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and AO3400, SI4420DYTRPBF delivers superior conduction efficiency (9 mΩ), faster switching (52 nC Q_g), and robust thermal design-making it optimal for 10–12.5 A industrial and portable power applications where SO-8 footprint and thermal performance are critical.

Availability

SI4420DYTRPBF is available at Aetrix Electronics and suitable for battery-powered motor drives, DC-DC synchronous buck converters, and industrial PLC output modules requiring stable component supply across multi-year production cycles.

Supply support for SI4420DYTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SI4420DYTRPBF belongs to Vishay's TrenchFET® Gen III family-engineered specifically for high-efficiency, low-voltage power conversion in space-constrained and thermally demanding applications.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The SI4420DYTRPBF supports ±10 A continuous drain current at T_A = 70°C with V_GS = 10 V. This derating reflects thermal limitations of the SO-8 package on standard FR4 PCBs, where junction-to-ambient thermal resistance (50 °C/W) limits power dissipation to 1.6 W at that temperature.

Does this MOSFET require a gate resistor for stability in switching applications?

A gate resistor (typically 5–20 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 150 pF) and PCB trace inductance. Without it, fast edge rates (tr = 10 ns) may induce oscillation or shoot-through in half-bridge configurations, especially when driven directly from low-impedance MCU pins.

Can SI4420DYTRPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 4) enables inherent current sharing when paralleled. However, matched gate drive routing and symmetrical PCB layout are essential to avoid imbalance; typical practice uses individual 10 Ω gate resistors and Kelvin-source connections to minimize loop inductance.

Is the body diode suitable for reverse recovery in synchronous rectification?

The body diode has t_rr = 52–78 ns and V_SD = 1.1 V at 2.3 A, making it viable for synchronous rectification in buck converters up to ~500 kHz. However, its relatively slow recovery versus Schottky diodes means careful dead-time tuning is required to avoid cross-conduction losses in high-frequency designs.