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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SI4435DYPBF

Name: SI4435DYPBF
Brand: Infineon Technologies
SKU: SI4435DYPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4435DYPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4435DYPBF.pdf

Description:: MOSFET P-CH 30V 8A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:2,018

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Product details

Overview

SI4435DYPBF from Vishay Siliconix (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable and battery-powered systems. It features -30 V V_DS, 0.020 Ω R_DS(on) at V_GS = -10 V, -8.0 A continuous drain current at 25°C, and SO-8 package with enhanced thermal leadframe - enabling compact, low-loss power path control in USB OTG, power bank, and smart battery management circuits.

For engineers reviewing the SI4435DYPBF datasheet, SI4435DYPBF pinout, SI4435DYPBF application, or SI4435DYPBF equivalent, key selection criteria include verified R_DS(on) at -4.5 V (-0.026 Ω), body diode reverse recovery performance (t_rr = 34–51 ns), thermal resistance (R_θJA = 50 °C/W), and SO-8 pin-compatible layout compatibility with dual-MOSFET or load-switch configurations.

Technical Context

This device operates as a single P-channel power switch with gate threshold voltage (V_GS(th)) of -1.0 V (min), ensuring reliable turn-on from standard 3.3 V or 5 V logic rails. Its low R_DS(on) and optimized gate charge (Q_g = 40–60 nC) support fast, low-loss switching in synchronous buck high-side or reverse-polarity protection topologies.

The integrated body diode exhibits V_SD = -1.2 V at -2.5 A and controlled reverse recovery (Q_rr = 33–50 nC), making it suitable for applications requiring bidirectional current handling without external diodes - such as USB-C port power direction control and hot-swap circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 24 V rail and automotive battery backup systems
R_DS(on) @ V_GS = -10 V	0.020 Ω - Enables <160 mW conduction loss at 8 A, critical for thermally constrained PCBs
R_DS(on) @ V_GS = -4.5 V	0.026 Ω - Confirmed operation from 3.3 V GPIO, supporting direct microcontroller drive
I_D (continuous, 25°C)	-8.0 A - Sustains full-load current in 5 V/3 A USB PD sink paths
t_rr	34–51 ns - Limits switching node ringing and EMI in 500 kHz–1 MHz load-switch designs
R_θJA	50 °C/W - Predictable junction temperature rise on standard FR-4, enabling derating to 1.6 W at 70°C ambient
Q_g	40–60 nC - Supports <1 µs turn-on with 60 mA gate driver, minimizing transition losses

Pinout & Package

SI4435DYPBF is housed in a modified SO-8 package (JEDEC MS-012AA) with enhanced thermal leadframe for improved power dissipation and multi-die capability. The package supports vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Common high-current output node; internally paralleled pins reduce inductance and thermal resistance
6	Gate (G)	Control input; requires negative V_GS for turn-on; gate capacitance (C_iss = 2320 pF) dictates driver sizing
7, 8	Source (S)	Reference node for gate drive and load return; tied to system ground or battery negative in high-side switch configs

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.020 Ω at -10 V enables >98% efficiency in 5 V/6 A load-switch applications
SO-8 thermal leadframe	50 °C/W R_θJA allows 2.5 W dissipation at 25°C ambient without heatsink
Body diode with low Q_rr	33–50 nC reverse recovery charge minimizes voltage overshoot during inductive turn-off
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), compatible with standard reflow profiles
Specified down to -55°C	Guaranteed operation in industrial and automotive under-hood environments

Applications

USB Power Delivery Switching

Battery Protection Circuit

Use Scenario: Bidirectional 5–20 V power routing in USB-C DRP (dual-role port) implementations.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling V_BUS path between source and sink, with body diode enabling reverse current during role swap.

Use Value: 0.020 Ω R_DS(on) limits voltage drop to <160 mV at 8 A, preserving PD negotiation margins and reducing thermal footprint.

Use Scenario: Overvoltage and reverse-polarity protection in Li-ion battery packs (2–4 cell).

IC Role / Device Role / Timing Role: Reverse-blocking switch placed between battery terminals and system load to prevent damage from incorrect insertion or charger faults.

Use Value: -30 V V_DS rating withstands 18 V pack transients; -1.0 V V_GS(th) ensures clean turn-off below 2.5 V cutoff thresholds.

Hot-Swap Controller

Power Bank Load Management

Use Scenario: Inrush-limited board-level power insertion into live backplanes or modular systems.

IC Role / Device Role / Timing Role: Main pass element in discrete hot-swap circuit, driven by external current-sense amplifier and comparator.

Use Value: 50 ns t_rr and 0.026 Ω R_DS(on) at -4.5 V enable fast fault response and <100 mW steady-state loss at 5 A.

Use Scenario: Output stage of portable power banks delivering up to 3 A at 5 V to smartphones and tablets.

IC Role / Device Role / Timing Role: Final load switch isolating battery-to-USB output, supporting ON/OFF control and short-circuit protection.

Use Value: SO-8 footprint allows dual-device parallel configuration for 12 A total, while Q_g <60 nC permits use of low-cost 3.3 V GPIOs without buffer.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PbF	R_DS(on) = 0.022 Ω @ -10 V; higher Q_g (71 nC); same SO-8 package	Slightly slower switching; higher gate drive current required	Prefer when legacy IR design reuse is prioritized over minimal R_DS(on)
DMG6968U-7	R_DS(on) = 0.023 Ω @ -4.5 V; lower V_DS (-20 V); smaller TSOP-6 package	Limited to 16 V systems; unsuitable for 24 V backup or automotive	Select only for space-constrained 3.3 V–5 V consumer devices where -20 V rating suffices

Compared with IRF7425PbF and DMG6968U-7, SI4435DYPBF delivers the lowest R_DS(on) at both -10 V and -4.5 V, best-in-class thermal resistance for SO-8, and full -30 V rating - making it optimal for high-current, wide-input-voltage load switching where efficiency and robustness are primary.

Availability

SI4435DYPBF is available at Aetrix Electronics and suitable for USB-C power delivery modules, smart battery protection circuits, and industrial hot-swap subsystems requiring stable component supply and long-term manufacturability.

Supply support for SI4435DYPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SI44xx series targets high-efficiency, surface-mount power switching - engineered specifically for battery-powered, portable, and space-constrained systems demanding ultra-low on-resistance and robust thermal performance in standard packages.

FAQ

What is the maximum safe operating voltage for SI4435DYPBF in continuous DC operation?

The absolute maximum drain-to-source voltage (V_DS) is -30 V under all conditions, including transient events. Operation above this rating risks avalanche breakdown and permanent device failure. For reliable long-term use, design margin should limit steady-state V_DS to ≤ -24 V, especially in automotive or industrial environments with load-dump transients.

Can SI4435DYPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) is specified from -1.0 V (min), and R_DS(on) remains low (0.026 Ω) at V_GS = -4.5 V. A 3.3 V GPIO pulling the gate to ground achieves -3.3 V V_GS, sufficient for full enhancement in most load conditions up to 5 A. For 8 A operation, ensure PCB layout minimizes gate loop inductance to avoid oscillation.

Does SI4435DYPBF include an integrated ESD protection structure?

No - the device does not integrate dedicated ESD protection diodes on gate or drain terminals. Per the datasheet, gate-to-source and gate-to-drain leakage is specified at ±100 nA, indicating no internal clamping. External TVS or RC snubbers are recommended on gate lines in handheld or connector-exposed applications to prevent electrostatic damage during handling or mating.

How does the SO-8 thermal leadframe improve performance versus standard SO-8 MOSFETs?

The customized leadframe increases copper cross-section at drain pins and improves thermal path from die to PCB copper pour. This reduces R_θJA to 50 °C/W (vs. typical 62–75 °C/W), allowing 2.5 W dissipation at 25°C ambient - a 35% improvement. It also supports multiple die stacking within the same footprint, enabling higher current density without changing board layout.

SI4435DYPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2320 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

SI4435DYPBF FAQ

1.How can I place an order for SI4435DYPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4435DYPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4435DYPBF reliable?

The price and inventory of SI4435DYPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4435DYPBF is usually 5 days.

3.What payment methods are accepted for SI4435DYPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4435DYPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4435DYPBF?

SI4435DYPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4435DYPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4435DYPBF?

For technical support, including SI4435DYPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4435DYPBF requirements.

6.How does Aetrix verify that SI4435DYPBF is sourced from the original manufacturer or authorized distributors?

All SI4435DYPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4435DYPBF meets industry standards.

7.What is the process for return or replacement of SI4435DYPBF?

All SI4435DYPBF units undergo pre-shipment inspection (PSI). If there is an issue with SI4435DYPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4435DYPBF part is unused and in its original packaging.

Return procedure for SI4435DYPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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