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Infineon Technologies SI4435DYTR
- Part No.:
- SI4435DYTR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4435DYTR.pdf
- Description:
- MOSFET P-CH 30V 8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,505
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Product details
Overview
SI4435DYTR from Vishay Siliconix (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable and battery-powered systems. It features -30 V VDS, 0.020 Ω RDS(on) at VGS = -10 V, -8.0 A continuous drain current at 25°C, and SO-8 package with enhanced thermal leadframe. It is used in USB power switches, battery protection circuits, and hot-swap controllers.
For engineers reviewing the SI4435DYTR datasheet, SI4435DYTR pinout, SI4435DYTR application, or SI4435DYTR equivalent, key selection criteria include verified RDS(on) at -4.5 V gate drive, body diode reverse recovery performance (trr = 34–51 ns), junction-to-ambient thermal resistance (50 °C/W), and SO-8 pin-compatible layout compatibility with dual-MOSFET load switches.
Technical Context
This device operates as a low-side load switch with integrated body diode, optimized for synchronous rectification and reverse polarity protection. Its gate threshold voltage (-1.0 to -2.7 V) enables direct logic-level control from 3.3 V or 5 V microcontrollers without level-shifting.
The SO-8 package uses a customized leadframe to reduce thermal resistance and supports multiple-die configurations. Electrical behavior is characterized by strong transconductance (11 S), low gate charge (Qg = 40–60 nC), and stable RDS(on) over temperature (0.015–0.035 Ω across -4.5 V to -10 V drive).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for reverse-polarity protection in 24 V automotive or industrial supply rails |
| RDS(on) | 0.020 Ω @ VGS = -10 V - Enables <160 mW conduction loss at 8 A, critical for thermally constrained PCBs |
| ID (25°C) | -8.0 A - Continuous current rating enabling single-device replacement of dual-SOIC solutions in space-constrained designs |
| trr | 34–51 ns - Fast body diode recovery minimizes shoot-through risk in bidirectional power path applications |
| Qg | 40–60 nC - Low gate charge reduces driver power demand and enables efficient PWM operation up to 500 kHz |
| RθJA | 50 °C/W - Thermal resistance measured on FR-4 board defines maximum safe power dissipation without heatsink |
| VGS(th) | -1.0 to -2.7 V - Guaranteed turn-on with standard 3.3 V GPIO, eliminating need for external gate bias circuitry |
Pinout & Package
SI4435DYTR is housed in a surface-mount SO-8 package (JEDEC MS-012AA compliant) with exposed drain pads for improved thermal transfer. The leadframe is modified for lower RθJA and multi-die integration capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel internal drain connections - provides low-inductance, high-current path to PCB ground plane |
| 8 | Gate (G) | Single gate input - accepts standard logic-level drive; requires no series resistor for typical 3.3 V/5 V MCU outputs |
| Source (S) | Terminals 1–7 share common source connection via package substrate - forms integrated return path for load current | Internal source tie simplifies PCB routing and eliminates discrete source trace inverting requirements |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.020 Ω at -10 V ensures <160 mW I²R loss at full rated current, reducing thermal derating in compact enclosures |
| Logic-level gate drive | VGS(th) max -2.7 V guarantees reliable turn-on from 3.3 V microcontroller outputs without level shifters |
| Fast body diode | trr ≤ 51 ns and Qrr ≤ 50 nC enable use in synchronous buck topologies and reverse-current blocking without snubbers |
| Enhanced SO-8 thermal design | Custom leadframe lowers RθJA to 50 °C/W - supports 2.5 W dissipation on standard FR-4 without copper pour |
Applications
| USB Power Switching | Battery Protection Circuit |
|---|---|
Use Scenario: Controlling 5 V USB VBUS delivery to downstream peripherals while preventing backfeed during host sleep mode. IC Role / Device Role / Timing Role: P-channel high-side switch configured with gate driven by MCU GPIO to enable/disable power path. Use Value: 0.020 Ω RDS(on) limits voltage drop to <160 mV at 8 A, preserving USB voltage compliance and minimizing heat generation. | Use Scenario: Isolating Li-ion battery pack from charging circuit during overvoltage or overtemperature fault conditions. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between battery anode and charger IC input. Use Value: -30 V VDS rating withstands transient spikes up to ±28 V, ensuring robustness against load dump events in portable systems. |
| Hot-Swap Controller | Industrial I/O Module |
Use Scenario: Gradually ramping power to field-replaceable modules in programmable logic controllers to avoid inrush current tripping upstream breakers. IC Role / Device Role / Timing Role: Load switch controlled by dedicated hot-swap controller IC driving gate through RC network for soft-start timing. Use Value: Low Qg (40–60 nC) allows precise gate voltage slew rate control using small external RC components, enabling sub-10 ms soft-start profiles. | Use Scenario: Providing isolated 24 V DC power switching for sensor or actuator outputs in factory automation I/O terminals. IC Role / Device Role / Timing Role: High-side power switch interfacing with industrial PLC output drivers and optocoupled feedback paths. Use Value: Junction temperature range (-55 to +150 °C) and 150 °C TJ(max) support operation in uncooled enclosures near motor drives or power supplies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PbF | RDS(on) = 0.028 Ω @ -10 V; higher Qg (71 nC); same SO-8 footprint | Slightly higher conduction loss and slower switching; suitable where gate drive strength exceeds 50 mA peak | Select when legacy IR part qualification is required and 0.008 Ω RDS(on) margin is acceptable |
| DMG2305UVT | RDS(on) = 0.035 Ω @ -4.5 V; lower VDS (-20 V); smaller TSOP-6 package | Limited to 20 V systems; unsuitable for 24 V industrial rails but saves board area in consumer wearables | Choose for space-constrained 3.3 V/5 V applications where -20 V rating suffices and SO-8 footprint is not mandatory |
Compared with IRF7425PbF and DMG2305UVT, SI4435DYTR delivers the lowest RDS(on) at both -10 V and -4.5 V gate drive, supports higher voltage rails, and maintains SO-8 layout compatibility-making it optimal for thermally demanding, 24 V-rated load-switching designs requiring minimal board real estate.
Availability
SI4435DYTR is available at Aetrix Electronics and suitable for USB power switching, battery protection circuits, and industrial I/O modules requiring stable component supply and long-term production continuity.
Supply support for SI4435DYTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power devices, including MOSFETs, diodes, and IGBTs, with emphasis on high-efficiency, high-reliability solutions for industrial and automotive markets.
The SI4435DYTR belongs to Vishay's TrenchFET® Gen III P-channel MOSFET product line, engineered specifically for low-voltage, high-current load switching where ultra-low on-resistance and logic-level gate drive are essential.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The SI4435DYTR supports -6.4 A continuous drain current at TA = 70°C with VGS = -10 V. This rating accounts for thermal derating based on its 50 °C/W junction-to-ambient thermal resistance and 150 °C maximum junction temperature, making it suitable for enclosed environments without forced airflow.
Does SI4435DYTR require a gate resistor for MCU-driven switching?
No external gate resistor is required when driving SI4435DYTR directly from a 3.3 V or 5 V microcontroller GPIO, as its total gate charge is only 40–60 nC and input capacitance is well within typical MCU output current limits (±20 mA). A 10 Ω resistor may be added solely for EMI suppression in noisy environments.
Can SI4435DYTR be used in synchronous rectification?
Yes - its fast body diode (trr = 34–51 ns, Qrr = 33–50 nC) and low RDS(on) make it suitable for low-side synchronous rectification in buck converters operating up to 500 kHz, provided gate drive timing avoids shoot-through and the application stays within -30 V VDS limits.
Is the SO-8 package lead-free and RoHS-compliant?
Yes - SI4435DYTR is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), supporting standard vapor phase, infrared, and wave soldering processes without special handling.
SI4435DYTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2320 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
SI4435DYTR FAQ
1.How can I place an order for SI4435DYTR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4435DYTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4435DYTR reliable?
The price and inventory of SI4435DYTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4435DYTR is usually 5 days.
3.What payment methods are accepted for SI4435DYTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4435DYTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4435DYTR?
SI4435DYTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4435DYTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4435DYTR?
For technical support, including SI4435DYTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4435DYTR requirements.
6.How does Aetrix verify that SI4435DYTR is sourced from the original manufacturer or authorized distributors?
All SI4435DYTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4435DYTR meets industry standards.
7.What is the process for return or replacement of SI4435DYTR?
All SI4435DYTR units undergo pre-shipment inspection (PSI). If there is an issue with SI4435DYTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4435DYTR part is unused and in its original packaging.
Return procedure for SI4435DYTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4435DYTR Tags
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