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Infineon Technologies SIDC02D60C8X7SA2
- Part No.:
- SIDC02D60C8X7SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC02D60C8X7SA2.pdf
- Description:
- DIODE GEN PURP 600V 6A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:9,154
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Product details
Overview
SIDC02D60C8X7SA2 from Infineon Technologies is a 600 V, 6 A fast-switching silicon power diode die fabricated using Emitter Controlled 3 (EC3) technology with 70 µm thickness and soft reverse recovery characteristics. It serves as the freewheeling or anti-parallel diode in high-frequency IGBT-based power modules for industrial motor drives and resonant converters.
For engineers reviewing the SIDC02D60C8X7SA2 datasheet, SIDC02D60C8X7SA2 pinout (anode/cathode terminals), SIDC02D60C8X7SA2 application in power modules, or SIDC02D60C8X7SA2 equivalent bare-die diodes, key selection criteria include VR = 600 V, IF = 6 A, VF = 1.25–1.95 V at 6 A, low Qrr, and 70 µm thin-die thermal performance.
Technical Context
This bare die implements Infineon's Emitter Controlled 3 (EC3) process, enabling soft, fast switching with low reverse recovery charge (Qrr) and minimal temperature dependence of forward voltage. Its 70 µm thickness and 1.4 × 1.65 mm² active area support high current density and efficient heat extraction in press-pack or solder-bonded module assemblies.
The die features AlSiCu front-side metallization (3200 nm), Ni/Ag backside metallization compatible with epoxy and soft-solder die attach, and photoimide passivation. It is rated for junction temperatures up to +175 °C and designed for operation in hard- and soft-switching topologies where dynamic ruggedness and low EMI are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Repetitive Peak Reverse Voltage) | 600 V - supports DC-link voltages up to 400 V nominal in 3-phase inverters with 1.5× safety margin |
| IF (Continuous Forward Current) | 6 A at Tvj < 150 °C - defines steady-state conduction capability under thermal-limited conditions |
| VF (Forward Voltage) | 1.25–1.95 V at 6 A, 25 °C - directly impacts conduction loss and thermal design in high-duty-cycle applications |
| Qrr (Reverse Recovery Charge) | Low - enables soft switching, reduces turn-off losses and EMI in resonant and ZVS circuits |
| Die Thickness | 70 µm - improves thermal resistance (RthJC) and allows tighter thermal coupling in stacked module configurations |
| Junction Temperature Range | −40 to +175 °C - enables use in demanding industrial environments including traction and HVAC systems |
Pinout & Package
Package: Bare die (unencapsulated silicon chip), sawn on foil, 1.4 × 1.65 mm² active area, 70 µm thickness, anode pad size 0.97 × 1.22 mm², Ni/Ag backside metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Positive current terminal | AlSiCu metallized pad (0.97 × 1.22 mm²); bonded via Al wire ≤500 µm or conductive epoxy/solder |
| Cathode (K) | Current return path / substrate connection | Backside Ni/Ag layer; electrically conductive die attach required for thermal and electrical continuity |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled 3 (EC3) Technology | Enables soft, fast reverse recovery with low Qrr and reduced switching noise vs. standard PN diodes |
| 70 µm Thin Die | Reduces thermal resistance and improves transient thermal response in high-power module stacks |
| Low Temperature Coefficient of VF | Stable forward voltage across −40 to +150 °C, easing thermal management in wide-temperature designs |
| Ni/Ag Backside Metallization | Supports both epoxy and soft-solder die bonding, increasing assembly flexibility and reliability |
Applications
| Industrial Motor Drives | White Goods Inverters |
|---|---|
Use Scenario: 3-phase inverter stage in variable-speed compressors and pumps for refrigerators and washing machines. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode paired with 600 V IGBTs in bridge-leg configuration. Use Value: Low Qrr and soft recovery minimize voltage overshoot and EMI during IGBT turn-off, meeting CISPR-14 Class B emissions limits. | Use Scenario: DC-link and output stage in inverter-driven HVAC fan and compressor modules. IC Role / Device Role / Timing Role: Fast-recovery diode in boost PFC and inverter legs for energy-efficient appliance control. Use Value: Stable VF over temperature ensures consistent efficiency across ambient conditions from −20 to +70 °C. |
| Resonant LLC Converters | IGBT Power Modules |
Use Scenario: Secondary-side synchronous rectification and primary-side snubbing in high-efficiency server PSUs. IC Role / Device Role / Timing Role: Auxiliary diode for zero-voltage switching (ZVS) initiation and clamping in resonant tank networks. Use Value: Soft recovery prevents current spikes that disrupt ZVS timing, improving converter efficiency above 95%. | Use Scenario: Integrated into 600 V, 1200 V half-bridge and six-pack modules for industrial drives and UPS systems. IC Role / Device Role / Timing Role: Bare-die component mounted alongside IGBT chips in press-fit or soldered module substrates. Use Value: Matched thermal expansion and thin-die geometry enable uniform stress distribution and long-term power cycling reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching bare-die diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-12N1B | 1200 V, 100 A rated; larger die (4.5 × 4.5 mm²), thicker (120 µm); higher Qrr | Targeted at medium-voltage industrial inverters, not optimized for resonant or compact-module use | Select when higher voltage blocking or current rating is required; not drop-in due to size and thermal profile mismatch |
| STMicroelectronics STTH8R06DJ | 600 V, 8 A discrete TO-247 packaged diode; not a bare die; VF = 1.7 V typ. at 8 A | Used in discrete PCB-level designs, not module integration; lacks backside metallization for direct die attach | Choose only for prototyping or low-volume discrete builds; unsuitable for high-density power modules |
Compared with MDD100-12N1B and STTH8R06DJ, SIDC02D60C8X7SA2 offers superior module integration readiness via its 70 µm thin die, EC3 soft-switching behavior, and Ni/Ag backside-enabling lower-profile, higher-power-density assemblies where thermal coupling and EMI control are critical.
Availability
SIDC02D60C8X7SA2 is available at Aetrix Electronics and suitable for industrial motor drives, white goods inverters, and resonant LLC converter designs requiring stable component supply and qualified bare-die sourcing.
Supply support for SIDC02D60C8X7SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.
SIDC02D60C8X7SA2 belongs to Infineon's EC3 high-performance power diode die product line, engineered specifically for integration into compact, high-efficiency power modules used in industrial automation and energy-efficient appliances.
FAQ
Is SIDC02D60C8X7SA2 supplied in tape-and-reel or waffle pack?
No. SIDC02D60C8X7SA2 is delivered as bare die on foil, pre-sawn and inspected per AQL 0.65 visual standards. It is not packaged in tape-and-reel or waffle trays; handling requires cleanroom protocols and ESD-safe tooling per MIL-STD-883.
What wire bonding material and diameter is recommended?
Aluminum wire with diameter ≤500 µm is specified for anode-side bonding. The 0.97 × 1.22 mm² AlSiCu anode pad is qualified for wedge or ball bonding; ultrasonic energy and force must be validated per die attach process window to avoid pad lift.
Can this die be used with silver sinter die attach?
Yes. The Ni/Ag backside metallization is compatible with Ag sinter pastes (e.g., Henkel LT705, Heraeus Pasteflex T3000). Sintering parameters (200–250 °C, 5–15 MPa, 5–10 min) must be qualified to maintain interfacial integrity and avoid void formation.
Does SIDC02D60C8X7SA2 have integrated ESD protection?
No. As a bare silicon die without passivation-enhanced guard rings or integrated clamps, it is classified as ESD-sensitive per MIL-STD-883. Handling requires Class 0 ESD controls (≤100 V HBM), grounded tweezers, and ionized air environments during assembly.
SIDC02D60C8X7SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 1.95 V @ 6 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC02D60C8X7SA2 FAQ
1.How can I place an order for SIDC02D60C8X7SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC02D60C8X7SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC02D60C8X7SA2 reliable?
The price and inventory of SIDC02D60C8X7SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC02D60C8X7SA2 is usually 5 days.
3.What payment methods are accepted for SIDC02D60C8X7SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC02D60C8X7SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC02D60C8X7SA2?
SIDC02D60C8X7SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC02D60C8X7SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC02D60C8X7SA2?
For technical support, including SIDC02D60C8X7SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC02D60C8X7SA2 requirements.
6.How does Aetrix verify that SIDC02D60C8X7SA2 is sourced from the original manufacturer or authorized distributors?
All SIDC02D60C8X7SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC02D60C8X7SA2 meets industry standards.
7.What is the process for return or replacement of SIDC02D60C8X7SA2?
All SIDC02D60C8X7SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC02D60C8X7SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC02D60C8X7SA2 part is unused and in its original packaging.
Return procedure for SIDC02D60C8X7SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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