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Infineon Technologies SIDC03D60F6X1SA1
- Part No.:
- SIDC03D60F6X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC03D60F6X1SA1.pdf
- Description:
- DIODE GEN PURP 600V 6A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:8,959
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Product details
Overview
SIDC03D60F6X1SA1 from Infineon Technologies is a 600 V, 6 A fast-switching silicon power diode die using Emitter Controlled technology with a 70 µm chip thickness, optimized for soft recovery and low reverse recovery charge in high-frequency SMPS and resonant converter modules.
For engineers reviewing the SIDC03D60F6X1SA1 datasheet, SIDC03D60F6X1SA1 pinout (anode/cathode terminals), SIDC03D60F6X1SA1 application in resonant LLC topologies, or SIDC03D60F6X1SA1 equivalent bare-die diodes for module integration, this page delivers verified die-level specifications, thermal ruggedness context, and mounting-critical electrical behavior not found in packaged part summaries.
Technical Context
This bare die implements Infineon's Emitter Controlled (EC) fast-recovery structure, delivering soft reverse recovery with Qrr minimized at 600 V blocking and 6 A forward conduction. Its 70 µm thin wafer enables reduced carrier lifetime and lower stored charge without external lifetime-killing processes.
Dynamic ruggedness is validated under IFmax = 12 A and VRmax = 600 V at Tvj ≤ 150 °C, though switching waveforms and thermal impedance depend entirely on module-level layout, die attach method (conductive epoxy or solder), and heatsink interface design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - maximum repetitive reverse voltage; defines safe operating limit in bridge arms and clamp circuits |
| IF | 6 A - continuous forward current at Tvj < 150 °C; derates with thermal resistance of module assembly |
| VF | 1.6 V @ IF = 6 A - forward voltage drop directly impacts conduction loss and thermal load in high-duty-cycle operation |
| IR | 27 µA @ VR = 600 V - low leakage supports stable blocking in high-impedance snubber networks |
| Tvj Range | –40 to +175 °C - extended junction temperature capability enables use in high-ambient industrial drives |
| Die Size | 1.2 × 2.25 mm² - compact footprint allows dense power module layouts and multi-chip parallel configurations |
Pinout & Package
Package: Bare die (unencapsulated silicon chip), sawn on foil, 150 mm wafer, photoimide passivation, AlSiCu front-side metallization, Ni/Ag backside metallization. Not supplied in leaded or surface-mount package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad | Forward current entry point | 0.718 × 1.768 mm² AlSiCu pad; designed for wire bonding (Al ≤250 µm) or conductive die attach |
| Cathode backside | Forward current exit / reverse blocking terminal | Ni/Ag metallization compatible with epoxy or soft-solder die bonding; electrically common to entire back surface |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EC) structure | Enables soft, fast reverse recovery without lifetime control implants-reducing EMI in high-dV/dt resonant converters |
| 70 µm thin die | Minimizes minority carrier storage and Qrr, enabling higher switching frequencies without excessive recovery loss |
| Low temperature coefficient of VF | Stable forward voltage across –40 to +150 °C junction range-critical for predictable loss modeling in thermal-aware control |
| Photoimide passivation | Front-side insulation robust against humidity and process chemicals during module assembly and reflow |
Applications
| Industrial Motor Drives | Server PSU Resonant Converters |
|---|---|
Use Scenario: Bidirectional freewheeling path in 3-phase IGBT-based inverter stages for HVAC compressors and pump drives. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode in anti-parallel configuration with IGBTs, handling 10–50 kHz switching with minimal tail current. Use Value: Soft recovery reduces voltage overshoot across IGBTs, lowering snubber losses and EMI filter burden. | Use Scenario: Secondary-side synchronous rectification and primary-side clamping in 100–300 kHz LLC resonant DC-DC converters for 1U server PSUs. IC Role / Device Role / Timing Role: High-voltage, low-Qrr die used in discrete or hybrid module form for zero-voltage switching (ZVS) assist and clamp energy recycling. Use Value: Low reverse recovery charge enables reliable ZVS over full load range, improving efficiency above 96% at 50%–100% load. |
| Renewable Energy Inverters | Induction Heating Systems |
Use Scenario: Boost stage freewheeling diode in string inverters (800–1000 V DC link) operating at 16–20 kHz with forced-air cooling. IC Role / Device Role / Timing Role: High-VRRM die mounted in press-pack or DBC substrate for high-reliability solar field deployment. Use Value: 175 °C max junction rating supports operation in unventilated enclosures with ambient up to 70 °C. | Use Scenario: Inverter leg anti-parallel diode in 20–100 kHz series-resonant induction heating inverters driving 10–50 kW loads. IC Role / Device Role / Timing Role: Fast, soft-recovery die handling high di/dt (>1 kA/µs) during zero-current switching transitions. Use Value: Minimal reverse recovery tail prevents shoot-through risk during commutation, increasing system reliability at high power density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery bare-die diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD101-12N1 | 1200 V, 10 A rated; thicker die (120 µm); higher Qrr and VF | Targeted at higher-voltage industrial drives; less suitable for >100 kHz resonant topologies | Select when VRRM margin >200 V is required and softness is secondary to ruggedness |
| STMicroelectronics STTH8R06D | 600 V, 8 A; TO-220FP packaged device-not bare die; includes molded case and leads | Designed for discrete PCB-level designs, not module integration; no backside metallization for thermal stacking | Choose only for prototyping or low-volume discrete builds where die attach and wire bonding are unavailable |
Compared with MDD101-12N1 and STTH8R06D, SIDC03D60F6X1SA1 offers superior high-frequency soft-switching performance in module-integrated designs due to its thin EC die, but requires qualified die-bonding infrastructure and is unsuitable for through-hole or SMT assembly.
Availability
SIDC03D60F6X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU resonant converters, and renewable energy inverters requiring stable component supply and traceable bare-die sourcing.
Supply support for SIDC03D60F6X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.
SIDC03D60F6X1SA1 belongs to Infineon's Emitter Controlled (EC) fast diode die product line, engineered specifically for high-efficiency, high-frequency power modules in resonant and hard-switched topologies.
FAQ
Is SIDC03D60F6X1SA1 supplied in a standard package?
No. SIDC03D60F6X1SA1 is a bare die-unencapsulated silicon chip-intended for integration into power modules or custom substrates. It has no leads, molding compound, or standardized package outline. Mounting requires die attach (conductive epoxy or solder) and aluminum wire bonding.
What is the significance of "Emitter Controlled" technology in this diode?
Emitter Controlled (EC) refers to Infineon's proprietary doping and junction design that achieves soft, fast reverse recovery without lifetime-killing techniques. This results in lower Qrr, reduced EMI, and improved ZVS capability in resonant converters compared to conventional fast diodes.
Can SIDC03D60F6X1SA1 be used in place of a TO-247 packaged 600 V diode?
Only in module-level redesigns. As a bare die, it cannot replace a TO-247 device without full mechanical, thermal, and interconnect redesign-including substrate layout, bond wire routing, and thermal interface engineering. It is not a drop-in substitute.
Does SIDC03D60F6X1SA1 require special handling due to ESD sensitivity?
Yes. It is classified as an electrostatic discharge sensitive device per MIL-STD-883. Handling requires grounded workstations, ionized air, ESD-safe packaging, and avoidance of direct contact with metallization. Storage must be in dry nitrogen, in original container, and at <23 °C for ≤6 months.
SIDC03D60F6X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 6 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC03D60F6X1SA1 FAQ
1.How can I place an order for SIDC03D60F6X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC03D60F6X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC03D60F6X1SA1 reliable?
The price and inventory of SIDC03D60F6X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC03D60F6X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC03D60F6X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC03D60F6X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC03D60F6X1SA1?
SIDC03D60F6X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC03D60F6X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC03D60F6X1SA1?
For technical support, including SIDC03D60F6X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC03D60F6X1SA1 requirements.
6.How does Aetrix verify that SIDC03D60F6X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC03D60F6X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC03D60F6X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC03D60F6X1SA1?
All SIDC03D60F6X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC03D60F6X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC03D60F6X1SA1 part is unused and in its original packaging.
Return procedure for SIDC03D60F6X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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