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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SIDC03D60F6X7SA1

Name: SIDC03D60F6X7SA1
Brand: Infineon Technologies
SKU: SIDC03D60F6X7SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDC03D60F6X7SA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: Die

Datasheet:: SIDC03D60F6X7SA1.pdf

Description:: DIODE GEN PURP 600V 6A DIE

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Inventory:7,016

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Product details

Overview

SIDC03D60F6X7SA1 from Infineon Technologies is a 600 V, 6 A fast-switching silicon power diode die using Emitter Controlled technology with 70 µm thickness, designed for high-frequency switching in resonant converters and motor drives where soft recovery and low Q_rr are critical. It features a 1.2 × 2.25 mm² chip area, AlSiCu front metallization, and Ni/Ag backside suitable for epoxy or soft-solder die bonding.

For engineers reviewing the SIDC03D60F6X7SA1 datasheet, SIDC03D60F6X7SA1 pinout (anode/cathode terminals), SIDC03D60F6X7SA1 application in SMPS and resonant topologies, or SIDC03D60F6X7SA1 equivalent bare-die diodes, this page provides verified die-level specifications, thermal and dynamic ruggedness context, and mounting-critical electrical behavior not found in packaged device summaries.

Technical Context

This bare die uses Infineon's Emitter Controlled (EC) technology to achieve soft, fast reverse recovery with low Q_rr (typ. 28 nC at I_F = 6 A, dI/dt = 100 A/µs) and minimal temperature coefficient of V_F. Its 70 µm thin wafer enables reduced carrier lifetime and optimized switching trade-offs.

Dynamic ruggedness is verified by design for I_Fmax = 12 A and V_Rmax = 600 V at T_vj ≤ 150 °C, though switching waveforms and thermal resistance depend entirely on module-level layout, die attach quality, and heatsinking - no standardized R_thJC or t_rr values are specified for the bare die.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - maximum repetitive reverse voltage before avalanche breakdown under transient conditions
I_F	6 A - continuous forward current rating at T_vj < 150 °C, dependent on thermal design of final assembly
V_F	1.6 V @ I_F = 6 A - forward voltage drop defining conduction loss in final module
I_R	27 µA @ V_R = 600 V - low leakage enabling stable blocking in high-impedance circuits
T_vj Range	–40 °C to +175 °C - junction temperature operating range, with derated I_F above 150 °C
Die Size	1.2 × 2.25 mm² - physical footprint dictating minimum module cell area and wire-bond layout
Thickness	70 µm - ultra-thin wafer enabling fast carrier sweep-out and low stored charge

Pinout & Package

Package: Bare die (unencapsulated silicon chip) with AlSiCu front-side metallization and Ni/Ag backside metallization; supplied on foil, sawn, with ∅0.65 mm reject ink dot. Not housed in TO-220, DPAK, or any molded package.

Pin/Terminal	Circuit Role	Design Meaning
Anode pad (front side)	Forward current entry / reverse voltage anode	0.718 × 1.768 mm² AlSiCu surface for wire bonding or solder interconnect; defines primary current path into die
Cathode (back side)	Forward current exit / reverse voltage cathode	Ni/Ag metallized surface for conductive die attach; must be electrically and thermally coupled to heatsink or substrate

Key Features

Feature	Design Value
Emitter Controlled (EC) technology	Enables soft, fast reverse recovery with controlled carrier lifetime - reduces EMI and snubber stress in hard-switched topologies
Low Q_rr	Typ. 28 nC at I_F = 6 A, dI/dt = 100 A/µs - directly lowers turn-off losses and di/dt-induced voltage spikes
Small V_F temperature coefficient	Negligible drift over –40 °C to +150 °C - ensures stable conduction loss across wide ambient and load conditions
70 µm thin die	Reduces minority carrier storage time and improves switching speed without compromising ruggedness
Ni/Ag back metallization	Enables reliable die bonding with both epoxy adhesives and soft solders (e.g., SnPb, SnAgCu)

Applications

Resonant LLC Converters

Industrial Motor Drives

Use Scenario: High-efficiency 100–500 kHz DC-DC conversion in server PSUs and telecom rectifiers using zero-voltage switching (ZVS).

IC Role / Device Role / Timing Role: Secondary-side freewheeling diode in synchronous rectification stage, handling bidirectional current during resonant half-cycles.

Use Value: Soft recovery minimizes voltage overshoot at ZVS transition points, reducing MOSFET stress and improving efficiency >96% at full load.

Use Scenario: Inverter leg anti-parallel diode in 3-phase 7.5–22 kW AC drives for pumps and compressors.

IC Role / Device Role / Timing Role: Freewheeling path for inductive motor current during PWM dead-time and regeneration events.

Use Value: Low Q_rr prevents shoot-through risk and limits commutation losses during 10–20 kHz PWM switching.

High-Frequency Induction Heating

UPS Inverter Stages

Use Scenario: Resonant tank rectification in 20–100 kHz solid-state induction heaters for metal forging and brazing.

IC Role / Device Role / Timing Role: Fast-recovery output diode in series-resonant inverter output stage, conducting high di/dt currents with minimal ringing.

Use Value: 70 µm thickness and EC structure suppress oscillatory turn-off transients, enabling stable operation without added snubbers.

Use Scenario: Bidirectional power flow control in double-conversion online UPS systems with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Anti-parallel diode in IGBT-based H-bridge inverter, supporting regenerative braking and grid feedback modes.

Use Value: Stable V_F over temperature ensures predictable conduction loss during extended overload and battery discharge cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching bare-die diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IDT08SG60C	600 V / 8 A SiC Schottky die; zero Q_rr, V_F = 1.7 V @ 8 A; higher cost, no reverse recovery	Eliminates reverse recovery loss but requires gate drive redesign for SiC compatibility and higher dV/dt immunity	Choose for >300 kHz designs where zero recovery loss justifies SiC cost and layout changes
FFP08U60DT	600 V / 8 A ultrafast discrete TO-220 diode; Q_rr = 42 nC; V_F = 2.1 V @ 8 A; packaged, not bare die	Limited to lower-power modules due to TO-220 thermal resistance; unsuitable for integrated power modules	Choose only for prototyping or low-volume discrete builds where bare-die integration is not required

Compared with IDT08SG60C and FFP08U60DT, SIDC03D60F6X7SA1 offers optimal balance of soft switching, proven ruggedness in press-pack and DBC modules, and direct compatibility with standard silicon IGBT co-packaging - making it preferred for industrial inverters and resonant SMPS where cost, thermal integration, and reliability outweigh zero-Q_rr benefits.

Availability

SIDC03D60F6X7SA1 is available at Aetrix Electronics and suitable for resonant LLC converters, industrial motor drives, and high-frequency induction heating systems requiring stable component supply and traceable bare-die sourcing.

Supply support for SIDC03D60F6X7SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

SIDC03D60F6X7SA1 belongs to Infineon's "Fast Switching Diode Die" product line, engineered specifically for integration into high-power modules where soft recovery, low Q_rr, and thermal robustness are prioritized over ultra-low V_F.

FAQ

Is SIDC03D60F6X7SA1 a packaged device or bare die?

SIDC03D60F6X7SA1 is a bare silicon die - unencapsulated, supplied on foil with anode pad on front side and Ni/Ag cathode metallization on back side. It requires integration into a power module or custom substrate via die attach and wire bonding; no leadframe or plastic/mold compound is included.

What is the maximum continuous forward current rating?

The rated continuous forward current is 6 A at junction temperature below 150 °C. The absolute maximum repetitive forward current is 12 A, but usable current depends entirely on thermal design - including die attach quality, substrate material, heatsink interface, and ambient conditions.

Does this diode have a specified reverse recovery time (t_rr)?

No t_rr value is specified in the official documentation. Infineon characterizes recovery behavior via Q_rr (28 nC typ.) and softness factor, as t_rr varies significantly with dI/dt, temperature, and circuit layout - especially in module-level implementations where stray inductance dominates waveform shape.

Can SIDC03D60F6X7SA1 be used in life-support equipment?

No - Infineon explicitly restricts use in life-support devices or systems unless approved in writing. This bare die lacks system-level safety certification (e.g., ISO 13485, IEC 60601), and its performance depends entirely on module-level validation, making it unsuitable for implantable or critical-care applications without formal Infineon authorization.

SIDC03D60F6X7SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 6A

Voltage - Forward (Vf) (Max) @ If:: 1.6 V @ 6 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 27 µA @ 600 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

Operating Temperature - Junction:: -40°C ~ 175°C

SIDC03D60F6X7SA1 FAQ

1.How can I place an order for SIDC03D60F6X7SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC03D60F6X7SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC03D60F6X7SA1 reliable?

The price and inventory of SIDC03D60F6X7SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC03D60F6X7SA1 is usually 5 days.

3.What payment methods are accepted for SIDC03D60F6X7SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC03D60F6X7SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC03D60F6X7SA1?

SIDC03D60F6X7SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC03D60F6X7SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC03D60F6X7SA1?

For technical support, including SIDC03D60F6X7SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC03D60F6X7SA1 requirements.

6.How does Aetrix verify that SIDC03D60F6X7SA1 is sourced from the original manufacturer or authorized distributors?

All SIDC03D60F6X7SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC03D60F6X7SA1 meets industry standards.

7.What is the process for return or replacement of SIDC03D60F6X7SA1?

All SIDC03D60F6X7SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC03D60F6X7SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC03D60F6X7SA1 part is unused and in its original packaging.

Return procedure for SIDC03D60F6X7SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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