Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SIDC04D60F6X1SA2

Part No.:
SIDC04D60F6X1SA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
Die
Datasheet:
AetrixSIDC04D60F6X1SA2.pdf
Description:
DIODE GEN PURP 600V 9A DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,577

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIDC04D60F6X1SA2 from Infineon Technologies is a 600 V, 9 A fast-switching silicon power diode die with emitter-controlled technology and 70 µm thickness, designed for high-frequency switching in discrete and module-based power conversion stages; features soft recovery, low Qrr, and stable thermal coefficient across -40 °C to +150 °C junction range.

For engineers reviewing the SIDC04D60F6X1SA2 datasheet, SIDC04D60F6X1SA2 pinout, SIDC04D60F6X1SA2 application, or SIDC04D60F6X1SA2 equivalent, key selection criteria include reverse voltage rating (600 V), forward current capability (9 A), forward voltage drop (1.6 V @ 9 A), die size (1.85 × 1.85 mm²), and suitability for resonant topologies requiring low recovery charge and temperature-stable behavior.

Technical Context

This bare die implements emitter-controlled (EC) technology to achieve soft, fast reverse recovery with low Qrr and minimal dependence on junction temperature. Its 70 µm thickness and 600 V blocking capability are optimized for high-voltage SMPS and motor drive inverters where dynamic ruggedness and thermal stability are critical.

The device exhibits 27 µA reverse leakage at 600 V and a cathode-anode breakdown voltage of 600 V (IR = 0.8 mA). Forward voltage is specified at 1.6 V under 9 A DC conduction, with maximum continuous forward current rated at 18 A when Tvj < 150 °C - dependent on thermal design of the host assembly.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports primary-side rectification in 400 V AC-input SMPS and industrial DC-link applications
IF9 A - rated DC forward current at Tvj < 150 °C; defines baseline conduction capability in discrete packages
VF1.6 V @ 9 A - low forward drop reduces conduction losses in high-duty-cycle switching stages
QrrLow - enables soft, low-noise commutation in ZVS/ZCS resonant converters and PFC stages
Tvj Range-40 °C to +150 °C - wide operating range supports automotive under-hood and industrial ambient conditions
Die Size1.85 × 1.85 mm² - compact footprint enables high-density module integration and thermal optimization
Thickness70 µm - thin die improves switching speed and reduces stored charge without compromising ruggedness

Pinout & Package

Package: Bare die (unmounted silicon chip), sawn on foil, anode-up configuration; no leadframe or molded package. Anode pad measures 1.368 × 1.368 mm²; total die area 3.42 mm²; wafer diameter 150 mm.

Pin/TerminalCircuit RoleDesign Meaning
Anode (A)Current entry point during forward conductionLarge AlSiCu metallized pad (1.368 × 1.368 mm²) optimized for wire bonding (Al ≤250 µm) or conductive die attach
Cathode (backside)Current exit path and thermal interfaceNi/Ag backmetal system compatible with epoxy or soft-solder die bonding; primary heat extraction surface

Key Features

FeatureDesign Value
Emitter-Controlled TechnologyEnables soft, fast reverse recovery with reduced EMI generation in high-frequency switching
Low Reverse Recovery Charge (Qrr)Minimizes switching losses and voltage overshoot during turn-off in hard- and resonant-switched circuits
Small Temperature CoefficientEnsures stable VF and Qrr over full operating temperature range (-40 °C to +150 °C)
70 µm Thin DieReduces minority carrier storage time while maintaining 600 V blocking capability and dynamic ruggedness
ESD-Sensitive HandlingClassified per MIL-STD-883; requires controlled handling to prevent gate oxide or junction damage

Applications

Industrial Motor DrivesServer & Telecom SMPS

Use Scenario: IGBT or MOSFET freewheeling path in 3-phase inverter legs for HVAC and pump drives.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode providing low-loss, low-noise commutation during PWM dead-time intervals.

Use Value: Soft recovery minimizes voltage spikes across switching devices, reducing snubber requirements and improving system reliability.

Use Scenario: Output rectification in high-efficiency LLC resonant converters for 48 V intermediate bus supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier companion or standalone output diode enabling zero-voltage switching transitions.

Use Value: Low Qrr and stable VF reduce conduction and switching losses, supporting >96% efficiency at full load.

Renewable Energy InvertersInduction Heating Systems

Use Scenario: DC-link clamping and anti-parallel path in solar string inverters with 600 V DC input.

IC Role / Device Role / Timing Role: High-voltage, high-temperature freewheeling diode integrated into power modules for bidirectional energy flow.

Use Value: 600 V VRRM and +150 °C Tvj rating ensure robust operation under elevated DC-link voltages and ambient temperatures.

Use Scenario: Resonant tank rectification in 20–100 kHz induction heating half-bridge outputs.

IC Role / Device Role / Timing Role: Fast, soft-recovery diode handling high di/dt and repetitive reverse recovery stress.

Use Value: Low temperature coefficient prevents thermal runaway during sustained high-power bursts, extending system lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching high-voltage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS MDD100-16N11600 V VRRM, 100 A IF, TO-247 packaged module - significantly higher voltage/current rating, larger footprintTargeted at medium-voltage industrial drives; not suitable as direct die replacementSelect only when system-level voltage derating or parallel die stacking is required beyond 600 V.
STMicroelectronics STTH8R06D600 V VRRM, 8 A IF, TO-220AC packaged discrete - same voltage class but lower current, different packaging and thermal pathDesigned for PCB-mount discrete use; lacks bare-die flexibility for custom module integrationChoose for prototyping or low-volume discrete designs where die attach and wire bonding are impractical.

Compared with MDD100-16N1 and STTH8R06D, SIDC04D60F6X1SA2 offers optimal trade-off of 600 V rating, 9 A capability, and bare-die form factor for space-constrained, thermally optimized power modules - neither alternative matches its combination of die-level integration, soft switching, and thermal coefficient stability.

Availability

SIDC04D60F6X1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, and renewable energy inverters requiring stable component supply, consistent die-to-die parametric uniformity, and traceable wafer-lot sourcing.

Supply support for SIDC04D60F6X1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

SIDC04D60F6X1SA2 belongs to Infineon's high-voltage fast diode die portfolio, engineered specifically for integration into power modules and discrete assemblies demanding soft switching, low Qrr, and thermal stability in resonant and hard-switched topologies.

FAQ

Is SIDC04D60F6X1SA2 supplied in a packaged format or as a bare die?

SIDC04D60F6X1SA2 is supplied exclusively as a bare silicon die - sawn on foil, anode-up, with no encapsulation or leadframe. It requires mounting onto a substrate (e.g., DBC, IMS) and wire bonding or clip bonding for integration into discrete or module-level power assemblies.

What is the recommended die attach method for SIDC04D60F6X1SA2?

The die supports electrically conductive adhesive or soft solder (e.g., SnAgCu) for anode-side attachment, and Ni/Ag backmetal is qualified for both epoxy and soft-solder bonding to copper or DBC substrates. Thermal interface design must accommodate 70 µm thickness and 1.85 × 1.85 mm² footprint.

Does SIDC04D60F6X1SA2 have a specified reverse recovery time (trr) or only Qrr?

The official documentation specifies low reverse recovery charge (Qrr) but does not publish trr values, as switching behavior depends strongly on external circuit conditions (di/dt, temperature, snubber). Qrr is characterized and guaranteed; trr must be measured in the target application context.

Can SIDC04D60F6X1SA2 be used in life-support equipment?

No - Infineon explicitly restricts use in life-support devices or systems unless expressly approved in writing. The die is not certified for implantable or critical-care applications where failure could endanger human life; it is intended for industrial, telecom, and renewable energy power conversion only.

SIDC04D60F6X1SA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
9A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 9 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Operating Temperature - Junction:
-40°C ~ 175°C

SIDC04D60F6X1SA2 FAQ

1.How can I place an order for SIDC04D60F6X1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC04D60F6X1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC04D60F6X1SA2 reliable?

The price and inventory of SIDC04D60F6X1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC04D60F6X1SA2 is usually 5 days.

3.What payment methods are accepted for SIDC04D60F6X1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC04D60F6X1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC04D60F6X1SA2?

SIDC04D60F6X1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC04D60F6X1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC04D60F6X1SA2?

For technical support, including SIDC04D60F6X1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC04D60F6X1SA2 requirements.

6.How does Aetrix verify that SIDC04D60F6X1SA2 is sourced from the original manufacturer or authorized distributors?

All SIDC04D60F6X1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC04D60F6X1SA2 meets industry standards.

7.What is the process for return or replacement of SIDC04D60F6X1SA2?

All SIDC04D60F6X1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC04D60F6X1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC04D60F6X1SA2 part is unused and in its original packaging.

Return procedure for SIDC04D60F6X1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIDC04D60F6X1SA2 Tags

  • SIDC04D60F6X1SA2
  • SIDC04D60F6X1SA2 PDF
  • SIDC04D60F6X1SA2 Datasheet
  • SIDC04D60F6X1SA2 Specifications
  • SIDC04D60F6X1SA2 Images
  • Infineon Technologies
  • Infineon Technologies SIDC04D60F6X1SA2
  • Buy SIDC04D60F6X1SA2
  • SIDC04D60F6X1SA2 Price
  • SIDC04D60F6X1SA2 Distributor
  • SIDC04D60F6X1SA2 Supplier
  • SIDC04D60F6X1SA2 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER