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Infineon Technologies SIDC04D60F6X1SA4
- Part No.:
- SIDC04D60F6X1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC04D60F6X1SA4.pdf
- Description:
- DIODE GEN PURP 600V 9A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:5,714
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Product details
Overview
SIDC04D60F6X1SA4 from Infineon Technologies is a 600 V, 9 A fast-switching silicon power diode die with emitter-controlled technology, 70 µm thickness, and soft reverse recovery (Qrr minimized). It is designed for high-frequency switching in discrete and module-based SMPS, resonant converters, and motor drives where low conduction loss and controlled turn-off behavior are critical.
For engineers reviewing the SIDC04D60F6X1SA4 datasheet, SIDC04D60F6X1SA4 pinout (anode/cathode terminals), SIDC04D60F6X1SA4 application in resonant topologies, or SIDC04D60F6X1SA4 equivalent bare-die diodes, this page provides verified die-level specifications, thermal and dynamic behavior context, package-agnostic mounting guidance, and validated alternatives for power module integration.
Technical Context
This bare die uses Infineon's Emitter Controlled (EC) technology to achieve soft, fast switching with low reverse recovery charge (Qrr) and minimal temperature coefficient of VF. Its 70 µm thin wafer enables reduced carrier lifetime and optimized trade-off between forward voltage (1.6 V @ 9 A) and switching speed.
The die features AlSiCu front-side metallization (3200 nm), Ni/Ag backside metallization compatible with epoxy and soft solder die bonding, and photoimide passivation. It is not rated for standalone PCB mounting-integration requires module-level thermal and mechanical design per Infineon's assembly guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - maximum repetitive reverse blocking voltage; defines safe operating range in bridge and clamp configurations |
| IF | 9 A - continuous forward current at Tvj < 150 °C; sets baseline conduction capability under steady-state thermal conditions |
| VF | 1.6 V @ 9 A - forward voltage drop directly impacts conduction loss and thermal load in high-duty-cycle operation |
| Qrr | Low - soft, fast recovery reduces switching losses and EMI in ZVS/ZCS resonant circuits |
| Tvj Range | –40 °C to +175 °C - wide junction temperature range supports high-ambient industrial and automotive under-hood applications |
| Die Size | 1.85 × 1.85 mm² - compact footprint enables high-power density in multi-chip modules and stacked die assemblies |
| Thickness | 70 µm - thin die improves thermal transient response and enables precise lifetime control via irradiation |
Pinout & Package
Package: Bare die (unpacked silicon chip), sawn on foil, no leadframe or molded body. Not intended for direct PCB mounting. Requires module-level integration with die attach (conductive glue or solder) and aluminum wire bonding (≤250 µm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad (A) | Forward current entry point | 1.368 × 1.368 mm² AlSiCu metallized surface; primary interface for high-current conduction and thermal path to substrate |
| Cathode (backside) | Forward current exit / reverse blocking terminal | Ni/Ag metallization enables robust, low-resistance bond to copper baseplate or DBC ceramic in power modules |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EC) technology | Enables soft, fast reverse recovery with low Qrr, reducing snubber stress and EMI in high-frequency converters |
| 70 µm thin die | Optimizes carrier lifetime for balanced VF/trr trade-off and improves thermal transient response in pulsed-load applications |
| Photoimide passivation | Provides reliable front-side insulation and moisture resistance during module encapsulation and reflow processes |
| Ni/Ag backside metallization | Ensures compatibility with both epoxy die attach and soft-solder bonding, supporting diverse module manufacturing flows |
| ESD-sensitive handling | Classified per MIL-STD-883; requires static-safe handling during module assembly to prevent latent damage |
Applications
| Resonant LLC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: Used as freewheeling or synchronous rectification diode in high-efficiency 100–500 kHz LLC resonant DC-DC converters. IC Role / Device Role / Timing Role: Fast-recovery diode providing low-loss unidirectional current path during resonant tank zero-voltage switching transitions. Use Value: Low Qrr and soft recovery minimize voltage overshoot and reduce snubber losses, enabling >96% system efficiency at full load. | Use Scenario: Integrated into IGBT half-bridge modules for 3-phase inverter stages in HVAC and pump drives. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode clamping inductive kickback during IGBT turn-off. Use Value: Stable VF temperature coefficient ensures predictable conduction loss across –40 °C to +150 °C ambient, improving thermal management predictability. |
| High-Density Power Modules | Telecom Rectifier Units |
Use Scenario: Stacked with SiC MOSFETs or IGBTs in compact dual-die or multi-chip power modules for server PSUs. IC Role / Device Role / Timing Role: Complementary die in hybrid module architecture delivering optimized conduction and switching synergy. Use Value: 1.85 × 1.85 mm² footprint allows tight die placement and minimizes parasitic inductance in high-di/dt commutation paths. | Use Scenario: Mounted on DBC substrates in 48 V telecom rectifier modules with forced-air cooling. IC Role / Device Role / Timing Role: Output rectification diode handling continuous 9 A output current with minimal thermal derating. Use Value: 175 °C max junction temperature rating supports sustained operation at elevated ambient temperatures common in telecom cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching bare-die diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-12N1 | 1200 V, 100 A rated; larger die (4.5 × 4.5 mm²), higher Qrr, thicker (120 µm) | Targeted at medium-voltage industrial inverters, not optimized for high-frequency resonant use | Select when higher voltage blocking or higher current rating is required, but expect increased switching loss vs. SIDC04D60F6X1SA4 |
| STMicroelectronics STTH8R06D | 600 V, 8 A TO-220 packaged diode; same VF (~1.6 V), but slower recovery and no bare-die flexibility | Designed for discrete PCB-level designs-not suitable for module integration or space-constrained layouts | Choose only for prototyping or low-volume discrete builds where module integration is not needed |
Compared with MDD100-12N1 and STTH8R06D, SIDC04D60F6X1SA4 uniquely delivers optimized soft switching performance in a compact, module-ready bare die form-making it preferred for high-frequency, high-power-density applications where layout parasitics and thermal coupling are tightly controlled.
Availability
SIDC04D60F6X1SA4 is available at Aetrix Electronics and suitable for resonant LLC converters, industrial motor drives, and high-density power modules requiring stable component supply, consistent die-to-die parametric uniformity, and traceable wafer-lot sourcing.
Supply support for SIDC04D60F6X1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
SIDC04D60F6X1SA4 belongs to Infineon's high-performance fast diode die portfolio, engineered specifically for integration into advanced power modules targeting high-efficiency, high-frequency switching applications in industrial and telecom infrastructure.
FAQ
Is SIDC04D60F6X1SA4 supplied in tape-and-reel or waffle pack?
No. SIDC04D60F6X1SA4 is delivered as bare die on foil, not in standard packaging formats. It is shipped in nitrogen-purged, light-blocking containers with humidity control for up to six months at 23 °C. Module integrators must handle it using ESD-safe protocols and cleanroom-grade die attach processes.
What is the maximum allowable wire bond diameter for this die?
The die supports aluminum wire bonding with diameters up to 250 µm, as specified in the original Infineon documentation. Larger wires may compromise bond reliability or pad integrity; recommended bond force and ultrasonic energy must be calibrated per wire diameter and substrate material used in the target module assembly.
Can SIDC04D60F6X1SA4 be used as a replacement for silicon carbide Schottky diodes?
No. While both offer fast switching, SIDC04D60F6X1SA4 is a silicon PN diode with inherent reverse recovery (albeit soft), whereas SiC Schottky diodes are majority-carrier devices with zero Qrr. It cannot replace SiC Schottky diodes in ultra-high-frequency (>1 MHz) or zero-recovery-critical applications without redesigning snubber and gate drive timing.
Does this die require lifetime irradiation for parameter tuning?
Yes. As a 70 µm emitter-controlled die, its carrier lifetime-and thus Qrr and VF balance-is typically adjusted via electron irradiation during wafer processing. The delivered die is fully characterized and tuned; end users must not perform additional irradiation, as it would degrade parametric stability and reliability.
SIDC04D60F6X1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 9A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 9 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC04D60F6X1SA4 FAQ
1.How can I place an order for SIDC04D60F6X1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC04D60F6X1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC04D60F6X1SA4 reliable?
The price and inventory of SIDC04D60F6X1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC04D60F6X1SA4 is usually 5 days.
3.What payment methods are accepted for SIDC04D60F6X1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC04D60F6X1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC04D60F6X1SA4?
SIDC04D60F6X1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC04D60F6X1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC04D60F6X1SA4?
For technical support, including SIDC04D60F6X1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC04D60F6X1SA4 requirements.
6.How does Aetrix verify that SIDC04D60F6X1SA4 is sourced from the original manufacturer or authorized distributors?
All SIDC04D60F6X1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC04D60F6X1SA4 meets industry standards.
7.What is the process for return or replacement of SIDC04D60F6X1SA4?
All SIDC04D60F6X1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC04D60F6X1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC04D60F6X1SA4 part is unused and in its original packaging.
Return procedure for SIDC04D60F6X1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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