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Infineon Technologies SIDC05D60C8X1SA1
- Part No.:
- SIDC05D60C8X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC05D60C8X1SA1.pdf
- Description:
- DIODE GEN PURP 600V 15A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:2,863
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Product details
Overview
SIDC05D60C8X1SA1 from Infineon Technologies is a 600 V, 15 A fast-switching silicon power diode die in Emitter Controlled 3 (EC3) technology, designed for integration into power modules and discrete packages. It features soft reverse recovery, low Qrr, 70 µm chip thickness, and a 1.9 × 2.37 mm² die size with AlSiCu front metallization and Ni/Ag backside for epoxy or soft-solder die bonding.
For engineers reviewing the SIDC05D60C8X1SA1 datasheet, SIDC05D60C8X1SA1 pinout (anode/cathode terminals), SIDC05D60C8X1SA1 application in resonant converters or motor drives, or SIDC05D60C8X1SA1 equivalent for high-voltage Si diode replacement, this page delivers verified die-level specifications, thermal and switching behavior dependencies, and module-integration guidance.
Technical Context
This bare die implements Infineon's Emitter Controlled 3 (EC3) architecture to achieve soft, fast reverse recovery with low Qrr (typ. < 40 nC at IF = 15 A, dI/dt = 100 A/µs) and minimal temperature coefficient of VF. Its 70 µm thickness enables low forward voltage (VF = 1.25–1.95 V @ 15 A) while maintaining 600 V blocking capability and robust dynamic ruggedness up to 30 A peak forward current.
The die is passivated with photoimide, features anodized AlSiCu front-side metallization (3200 nm), and uses Ni/Ag backside metal compatible with both electrically conductive glue and soft-solder die attach. No wire bond pads are defined - it is a two-terminal (anode/cathode), non-wire-bondable chip intended for flip-chip or planar mounting in power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR | 600 V repetitive peak reverse voltage - supports 400 V AC input rectification and 600 V DC bus applications without derating. |
| IF | 15 A continuous forward current - rated at Tvj < 150 °C, defines thermal design margin for module-level heatsinking. |
| VF | 1.25–1.95 V @ 15 A - low conduction loss enabling high-efficiency operation in hard- and soft-switched topologies. |
| Qrr | Low reverse recovery charge - enables soft switching in resonant LLC and ZVS-PWM converters, reducing EMI and snubber losses. |
| Die size | 1.9 × 2.37 mm² - compact footprint optimized for high-power density module layouts and multi-die parallel configurations. |
| Tvj range | −40 to +175 °C - supports operation in harsh industrial environments including motor drives and white goods inverters. |
| Backside metal | Ni/Ag system - enables reliable die bonding using epoxy or soft solder, critical for thermal interface integrity in press-pack and soldered modules. |
Pinout & Package
Package: Bare silicon die (no leadframe or molded package); supplied on foil, sawn, with anode pad (1.47 × 1.94 mm²) on top surface and cathode on backside. Not intended for direct PCB mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (front-side pad) | Forward current entry point | AlSiCu metallized area (1.47 × 1.94 mm²) - designed for aluminum wedge bonding or direct contact in planar module stacks. |
| Cathode (backside) | Forward current exit / reverse voltage blocking terminal | Ni/Ag metallization - provides low-resistance, thermally stable interface for solder or conductive epoxy attachment to baseplate or DBC substrate. |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled 3 (EC3) technology | Enables soft, controllable reverse recovery with reduced dV/dt-induced turn-on risk in bridge-leg configurations. |
| 70 µm thin wafer processing | Reduces carrier lifetime and series resistance, yielding lower VF and faster switching without external lifetime-killing. |
| Photoimide passivation | Provides mechanical protection and moisture resistance during module assembly and long-term operation under thermal cycling. |
| ESD-sensitive handling (MIL-STD-883) | Requires grounded workstations and ionized air handling - critical for yield preservation during automated die placement. |
| Die-level AQL 0.65 visual inspection | Ensures high defect detection rate for micro-cracks, edge chipping, and metallization voids prior to module integration. |
Applications
| Motor Drive Inverters | Resonant LLC Converters |
|---|---|
Use Scenario: Used as freewheeling or anti-parallel diode in 3-phase IGBT/SiC MOSFET inverter legs for HVAC compressors and washing machine drum motors. IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss current recirculation during dead-time, minimizing voltage spikes and conduction loss. Use Value: Soft recovery reduces EMI generation and gate-drive stress on paired switches, improving system reliability at 10–20 kHz switching frequencies. | Use Scenario: Integrated into half-bridge output stage of 300–500 W resonant LLC power supplies for LED lighting and server PSUs. IC Role / Device Role / Timing Role: Synchronous rectification diode operating in zero-voltage switching (ZVS) mode with precise Qrr-driven timing alignment. Use Value: Low Qrr minimizes turn-on loss and enables higher frequency operation (>300 kHz) without efficiency penalty. |
| Industrial Power Modules | White Goods Inverters |
Use Scenario: Mounted in press-pack or soldered power modules for medium-voltage (600 V class) industrial drives and UPS systems. IC Role / Device Role / Timing Role: High-reliability die-level component enabling scalable, multi-chip parallel configurations with matched thermal expansion. Use Value: Ni/Ag backside and photoimide passivation ensure long-term bond integrity under 10,000+ thermal cycles in field-deployed equipment. | Use Scenario: Embedded in compact inverter modules for refrigerator compressors and dishwasher pump motors. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode supporting variable-speed control with low acoustic noise and high efficiency at partial load. Use Value: Small temperature coefficient of VF maintains consistent conduction loss across −25 to +85 °C ambient, improving energy rating compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage silicon fast diode die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD150-600DC | 600 V, 150 A module-integrated diode - packaged, not bare die; larger footprint and higher VF (1.85 V typ). | Targeted at bolt-down module users needing full assembly - not suitable for custom die-level integration. | Select when requiring pre-tested, UL-certified module form factor over die-level flexibility. |
| STMicroelectronics STTH1506D | Bare die variant unavailable; only offered in TO-247AC package - limits thermal optimization and power density. | Designed for discrete PCB-mount use, not module embedding; lacks Ni/Ag backside for solder bonding. | Choose only for prototyping or low-volume discrete builds where module integration is not required. |
Compared with MDD150-600DC and STTH1506D, SIDC05D60C8X1SA1 uniquely delivers bare-die integration flexibility, EC3 soft-switching behavior, and Ni/Ag backside compatibility - essential for high-efficiency, high-power-density module designs where thermal path control and layout scalability are critical.
Availability
SIDC05D60C8X1SA1 is available at Aetrix Electronics and suitable for motor drive inverters, resonant LLC power supplies, and industrial power modules requiring stable component supply, traceable die lots, and long-lifecycle support.
Supply support for SIDC05D60C8X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, headquartered in Munich.
SIDC05D60C8X1SA1 belongs to Infineon's Emitter Controlled Diode (ECD) product line, engineered specifically for high-efficiency, high-reliability power module integration in industrial and consumer inverter applications.
FAQ
Is SIDC05D60C8X1SA1 a packaged device or a bare die?
SIDC05D60C8X1SA1 is a bare silicon die - no package, no leads, no molding. It is supplied on foil, sawn, with front-side anode pad and backside cathode metallization. It must be integrated into a power module or discrete housing using die-attach processes such as epoxy bonding or soft soldering.
What is the maximum junction temperature rating for continuous operation?
The continuous operating junction temperature range is −40 °C to +150 °C. The absolute maximum junction temperature is +175 °C, but sustained operation above +150 °C requires derating of IF based on thermal resistance of the final module assembly and cooling conditions.
Does SIDC05D60C8X1SA1 support wire bonding?
No. SIDC05D60C8X1SA1 has no dedicated wire bond pads. Its front-side metallization is a continuous anode pad (1.47 × 1.94 mm²) intended for planar contact or aluminum wedge bonding in stacked module configurations - not standard gold or aluminum wire bonding.
Why is dynamic ruggedness listed as "tbd" in the datasheet?
Dynamic ruggedness (Pmax) is not production-tested per unit but verified by design and characterization across process lots. It reflects the die's ability to withstand simultaneous 600 V reverse bias and 30 A forward surge under specified dv/dt and di/dt - validated via simulation and accelerated life testing, not 100% screening.
SIDC05D60C8X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 15A
- Voltage - Forward (Vf) (Max) @ If:
- 1.95 V @ 15 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC05D60C8X1SA1 FAQ
1.How can I place an order for SIDC05D60C8X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC05D60C8X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC05D60C8X1SA1 reliable?
The price and inventory of SIDC05D60C8X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC05D60C8X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC05D60C8X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC05D60C8X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC05D60C8X1SA1?
SIDC05D60C8X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC05D60C8X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC05D60C8X1SA1?
For technical support, including SIDC05D60C8X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC05D60C8X1SA1 requirements.
6.How does Aetrix verify that SIDC05D60C8X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC05D60C8X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC05D60C8X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC05D60C8X1SA1?
All SIDC05D60C8X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC05D60C8X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC05D60C8X1SA1 part is unused and in its original packaging.
Return procedure for SIDC05D60C8X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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