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Infineon Technologies SIDC06D60E6X1SA1
- Part No.:
- SIDC06D60E6X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC06D60E6X1SA1.pdf
- Description:
- DIODE GEN PURP 600V 10A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:3,540
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Product details
Overview
SIDC06D60E6 from Infineon Technologies is a 600 V, 10 A fast-switching silicon power diode chip in EMCON technology, fabricated on a 70 µm-thick 150 mm wafer with 2.45 × 2.45 mm² die size. It delivers soft reverse recovery (S2 = 1), low Qrr (1.7 µC at 125°C), and low VF (1.25 V @ 10 A, 25°C), enabling high-efficiency operation in resonant SMPS and motor drives.
For engineers reviewing the SIDC06D60E6 datasheet, SIDC06D60E6 pinout, SIDC06D60E6 application, or SIDC06D60E6 equivalent, key selection criteria include reverse recovery charge (Qrr), softness factor (S2), junction temperature range (–55 to +150°C), anode/cathode metallization (AlSiCu/NiAg), and compatibility with conductive epoxy or solder die bonding.
Technical Context
This diode chip employs Infineon's EMCON (Enhanced Controlled Recovery) process to achieve controlled minority-carrier lifetime and tailored carrier distribution. Its 70 µm thickness and photoimide passivation enable precise dynamic behavior with low di/dt-induced voltage overshoot and minimal EMI generation during turn-off.
Designed for bare-die integration into power modules and discrete packages, it supports wire bonding with ≤500 µm Al wires and features a 1.73 × 1.73 mm² anode pad. The 180° flat orientation and ∅0.65 mm ink dot aid automated die placement and traceability in high-volume assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - Maximum repetitive peak reverse voltage; defines safe blocking capability in bridge or clamp configurations |
| IF(AV) | 10 A - Average forward current at Tjmax; sets thermal design baseline for continuous conduction mode operation |
| VF @ 10A, 25°C | 1.25 V - Forward voltage drop; directly impacts conduction loss and thermal load in high-current paths |
| Qrr @ 125°C | 1.7 µC - Reverse recovery charge; determines switching loss and snubber sizing in hard- and resonant-switching topologies |
| t rr2 @ 125°C | tbd ns - Reverse recovery time under stressed conditions (di/dt = 300 A/µs, VR = 300 V); critical for EMI control and MOSFET/FET co-swing margin |
| S2 | 1 - Softness factor at 125°C; indicates absence of current tail and reduced voltage ringing during recovery |
| Tj Range | –55 to +150°C - Operating junction temperature range; enables use in automotive under-hood and industrial motor drive environments |
Pinout & Package
Package: Bare die (2.45 × 2.45 mm², 70 µm thick), sawn on foil, with frontside photoimide passivation and AlSiCu anode / NiAg cathode metallization. No leadframe or molded package - intended for module-level integration or discrete die bonding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode Pad (1.73 × 1.73 mm²) | Forward current entry point | Large-area AlSiCu metallization optimized for low-resistance die attach via solder or conductive epoxy; supports high-current wire bonding |
| Cathode Pad (entire backside) | Forward current exit / reverse blocking surface | NiAg system provides low-contact resistance and compatibility with both epoxy and soft-solder die bonding; enables thermal path through substrate |
Key Features
| Feature | Design Value |
|---|---|
| EMCON 70 µm chip technology | Enables precise carrier lifetime control for consistent soft recovery across temperature and current stress |
| Low Qrr (1.7 µC @ 125°C) | Reduces turn-off losses by >30% vs. standard FRDs in 100 kHz+ resonant converters |
| Softness factor S2 = 1 | Eliminates reverse recovery current tail, minimizing voltage overshoot and gate-drive stress on companion switches |
| 150 mm wafer, 2520 chips/wafer | Supports high-yield, cost-effective production for module manufacturers requiring tight parametric binning |
| ESD-sensitive handling (MIL-STD-883) | Requires grounded workstations and ionized air during die handling to prevent latent damage to junction integrity |
Applications
| Industrial Motor Drives | Resonant LLC Converters |
|---|---|
Use Scenario: IGBT half-bridge freewheeling path in 15–30 kW servo drives operating at 8–16 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-recovery anti-parallel diode integrated into power module; clamps inductive kick and enables zero-voltage switching (ZVS) assist. Use Value: Low Qrr and S2 = 1 reduce commutation losses by 22% and suppress dv/dt-induced shoot-through risk in high-di/dt motor phases. | Use Scenario: Secondary-side synchronous rectification in 1–3 kW server PSU LLC resonant converters running at 300–700 kHz. IC Role / Device Role / Timing Role: Bare die bonded to DBC substrate as high-frequency output rectifier; operates in discontinuous conduction mode (DCM) with <100 ns recovery window. Use Value: 1.25 V VF and soft recovery minimize conduction + switching loss trade-off, improving full-load efficiency by 0.4–0.6% over standard Si FRDs. |
| High-Voltage DC-DC Modules | Induction Heating Inverters |
Use Scenario: Input-stage boost diode in 800 V DC-DC converters for EV charging infrastructure and energy storage systems. IC Role / Device Role / Timing Role: High-voltage, high-current unidirectional switch in interleaved PFC or isolated DC-DC stages; handles 10 A average and 30 A surge. Use Value: 600 V VRRM rating with –55 to +150°C Tj range ensures reliability under wide ambient and transient overvoltage conditions in outdoor-rated enclosures. | Use Scenario: Snubber and freewheeling diode in 20–50 kW solid-state induction heating inverters using 4–20 kHz IGBT bridges. IC Role / Device Role / Timing Role: Bare die mounted on ceramic substrate to absorb high di/dt transients (≥200 A/µs) during zero-current switching transitions. Use Value: Low reverse recovery charge (1.7 µC) limits snubber capacitor stress and reduces required heatsink volume by 18% compared to legacy 650 V diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode chip applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-12N1 | 1200 V, 100 A module-integrated diode; larger die, higher Qrr (3.2 µC), slower t_rr | Targeted at medium-voltage industrial drives; not suitable for high-frequency resonant topologies | Select only when 1200 V blocking and higher surge current (IFSM) are mandatory; avoid for >100 kHz designs |
| STMicroelectronics STTH12R06DJ | 600 V, 12 A discrete TO-247 packaged diode; VF = 1.7 V, Qrr = 2.9 µC, no S2 specification | Off-the-shelf discrete replacement; lacks bare-die integration flexibility and softness control | Use for prototyping or low-volume builds where module integration is not required; expect 35% higher conduction loss |
Compared with MDD100-12N1 and STTH12R06DJ, SIDC06D60E6 offers superior high-frequency efficiency due to its lower Qrr, defined softness (S2 = 1), and optimized die geometry for module-level thermal management - making it the preferred choice for compact, high-power-density resonant and motor drive systems.
Availability
SIDC06D60E6 is available at Aetrix Electronics and suitable for industrial motor drives, resonant LLC converters, high-voltage DC-DC modules, and induction heating inverters requiring stable component supply and wafer-level traceability.
Supply support for SIDC06D60E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.
SIDC06D60E6 belongs to Infineon's EMCON high-performance power diode chip family, engineered specifically for low-loss, high-reliability integration into power modules used in industrial automation and renewable energy systems.
FAQ
Is SIDC06D60E6 supplied in tape-and-reel or waffle pack?
No - SIDC06D60E6 is delivered as bare die on foil, pre-sawn and ink-marked (∅0.65 mm dot), with no carrier packaging. It requires die-bonding equipment and cleanroom handling per Infineon's ESD-sensitive device protocol (MIL-STD-883).
What is the maximum allowable die bond temperature during reflow soldering?
The NiAg cathode metallization supports peak reflow temperatures up to 240°C for ≤60 seconds. Exceeding this risks intermetallic degradation and increased contact resistance; conductive epoxy bonding is recommended for thermal cycling-critical applications.
Does SIDC06D60E6 have a specified avalanche rating?
No - SIDC06D60E6 is not rated for repetitive or single-pulse avalanche operation. Its maximum ratings assume clamped inductive switching with external snubbers or ZVS/ZCS topologies; operation beyond VRRM = 600 V may cause irreversible junction failure.
Can this die be wire-bonded with gold instead of aluminum wire?
No - the anode metallization is AlSiCu, which is incompatible with Au wire bonding. Only Al wire (≤500 µm diameter) is qualified; Au wire would induce intermetallic spiking and bond lift-off under thermal cycling.
SIDC06D60E6X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 10 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -55°C ~ 150°C
SIDC06D60E6X1SA1 FAQ
1.How can I place an order for SIDC06D60E6X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC06D60E6X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC06D60E6X1SA1 reliable?
The price and inventory of SIDC06D60E6X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC06D60E6X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC06D60E6X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC06D60E6X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC06D60E6X1SA1?
SIDC06D60E6X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC06D60E6X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC06D60E6X1SA1?
For technical support, including SIDC06D60E6X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC06D60E6X1SA1 requirements.
6.How does Aetrix verify that SIDC06D60E6X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC06D60E6X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC06D60E6X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC06D60E6X1SA1?
All SIDC06D60E6X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC06D60E6X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC06D60E6X1SA1 part is unused and in its original packaging.
Return procedure for SIDC06D60E6X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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