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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SIDC06D60F6X1SA4

Name: SIDC06D60F6X1SA4
Brand: Infineon Technologies
SKU: SIDC06D60F6X1SA4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDC06D60F6X1SA4

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: Die

Datasheet:: SIDC06D60F6X1SA4.pdf

Description:: DIODE GEN PURP 600V 15A DIE

Quantity:: RFQ Add To RFQ list

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Inventory:8,877

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Product details

Overview

SIDC06D60F6X1SA4 from Infineon Technologies is a 600 V, 15 A fast-switching silicon power diode die with Emitter Controlled technology, 70 µm thickness, and soft reverse recovery behavior-designed for high-frequency resonant converters and SMPS power modules.

For engineers reviewing the SIDC06D60F6X1SA4 datasheet, SIDC06D60F6X1SA4 pinout, SIDC06D60F6X1SA4 application, or SIDC06D60F6X1SA4 equivalent, key selection criteria include reverse recovery charge (Q_rr), junction temperature range (–40 °C to +175 °C), forward voltage at 15 A (1.6 V), die size (2.45 × 2.45 mm²), and compatibility with epoxy or soft-solder die bonding.

Technical Context

This bare die implements Infineon's Emitter Controlled (EC) technology to achieve soft, fast switching with low Q_rr and minimal temperature dependence of V_F. Its 70 µm thin wafer enables reduced carrier lifetime and optimized dynamic ruggedness.

Rated for 600 V repetitive peak reverse voltage and 30 A maximum repetitive forward current (at T_vj < 150 °C), it operates across –40 °C to +175 °C junction temperature, with breakdown voltage ≥600 V at I_R = 1 mA and reverse leakage ≤27 µA at V_R = 600 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports primary-side rectification in 400 V AC-input SMPS and resonant LLC topologies
I_F	15 A continuous - defines steady-state conduction capability under thermal design constraints
V_F @ 15 A	1.6 V - determines forward conduction loss and thermal dissipation in module layout
T_vj Range	–40 °C to +175 °C - enables operation in high-ambient industrial and traction inverters
Die Size	2.45 × 2.45 mm² - fits standard 2.5 mm pitch module substrates and enables high-power density integration
Chip Thickness	70 µm - reduces stored charge and improves switching speed without compromising ruggedness

Pinout & Package

Package: Bare die (unmounted silicon chip), sawn on foil, 2.45 × 2.45 mm² active area, 70 µm thickness, frontside photoimide passivation, AlSiCu metallization (3200 nm), Ni/Ag backside metallization suitable for conductive epoxy or soft solder die attach.

Pin/Terminal	Circuit Role	Design Meaning
Anode Pad (A)	Forward current entry point	1.73 × 1.73 mm² AlSiCu surface - sized for low-resistance wire bonding (Al ≤250 µm) and thermal spreading
Cathode Backside	Forward current exit / heat sink interface	Ni/Ag metallization - enables direct thermal coupling to baseplate via solder or epoxy, critical for thermal resistance control

Key Features

Feature	Design Value
Emitter Controlled (EC) Technology	Enables soft reverse recovery with low Q_rr, reducing EMI and snubber losses in high-frequency converters
Low Temperature Coefficient of V_F	Stable forward voltage over –40 °C to +175 °C, easing thermal design in wide-temperature applications
Dynamic Ruggedness Verified	Validated for I_Fmax = 30 A and V_Rmax = 600 V at T_vj ≤ 150 °C - ensures reliability under transient overload
ESD-Sensitive Handling	Classified per MIL-STD-883 - mandates controlled handling to prevent gate oxide damage during assembly

Applications

Industrial SMPS Rectification

Resonant LLC Converter Output Stage

Use Scenario: High-efficiency 3–5 kW telecom and server PSUs using phase-shifted full-bridge or LLC topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement or freewheeling diode in resonant tank circuits.

Use Value: Low Q_rr and soft recovery minimize switching losses and EMI, enabling >96% efficiency at 300 kHz switching frequency.

Use Scenario: Output rectification in 1–3 kW EV onboard chargers operating in variable-frequency LLC mode.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode integrated into hybrid power modules with SiC MOSFETs.

Use Value: Stable V_F across temperature ensures consistent conduction loss during battery charging cycles from –20 °C to +85 °C ambient.

Motor Drive Inverter Freewheeling

Renewable Energy Inverter Boost Stage

Use Scenario: 10–20 kW industrial servo drives requiring high-reliability freewheeling paths in IGBT-based 3-phase inverters.

IC Role / Device Role / Timing Role: Anti-parallel diode die bonded alongside IGBT chips in discrete or press-pack modules.

Use Value: 175 °C max junction temperature rating supports compact heatsink designs and extended overload capability.

Use Scenario: DC-link boost rectification in 5–15 kW solar string inverters with wide input voltage range (200–1000 V).

IC Role / Device Role / Timing Role: High-voltage, high-current output diode in dual-active-bridge or interleaved boost stages.

Use Value: 600 V V_RRM and 30 A I_FRM support high-power density designs while maintaining margin against voltage transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching power diode die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS MDD150-12N1B	Bare die, 1200 V/150 A, TO-247 packaged version - higher voltage rating but larger die size (4.5 × 4.5 mm²)	Targeted at medium-voltage industrial drives, not optimized for high-frequency SMPS	Select when system requires >600 V blocking or higher current, accepting larger footprint and higher Q_rr.
STMicroelectronics STTH12R06DJ	600 V/12 A TO-220AC packaged diode - lower current rating, fixed package, no die-level mounting flexibility	Used in lower-power AC/DC adapters and auxiliary supplies where module integration is unnecessary	Choose only for prototyping or low-volume board-level designs where bare-die assembly is impractical.

Compared with MDD150-12N1B and STTH12R06DJ, SIDC06D60F6X1SA4 offers optimal trade-off of high-frequency soft-switching performance, compact die size, and module-level thermal integration-making it uniquely suited for next-generation power modules targeting >300 kHz operation.

Availability

SIDC06D60F6X1SA4 is available at Aetrix Electronics and suitable for industrial SMPS, resonant LLC converters, motor drive inverters, and renewable energy inverters requiring stable component supply and traceable bare-die sourcing.

Supply support for SIDC06D60F6X1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

SIDC06D60F6X1SA4 belongs to Infineon's Emitter Controlled (EC) fast diode die product line, engineered specifically for high-efficiency, high-frequency power modules in SMPS and resonant converter applications.

FAQ

Is SIDC06D60F6X1SA4 supplied in tape-and-reel or waffle pack?

No. SIDC06D60F6X1SA4 is delivered as bare die on foil, pre-sawn and inspected per AQL 0.65 visual standard. It is not supplied in tape-and-reel, waffle pack, or any packaged format-intended exclusively for module-level die bonding.

What is the recommended die attach method for SIDC06D60F6X1SA4?

Infineon specifies electrically conductive glue or soft solder (e.g., SnAgCu) for cathode-side attachment. The Ni/Ag backside metallization is qualified for both methods; epoxy bonding must use thermally conductive, low-outgassing formulations compatible with 175 °C junction operation.

Does SIDC06D60F6X1SA4 have a specified reverse recovery time (t_rr)?

No-t_rr is not specified in the datasheet. Instead, Infineon characterizes softness and low Q_rr as core performance attributes. Measured t_rr depends on external circuit conditions (di/dt, temperature, V_R) and is not guaranteed due to module-level dependency.

Can SIDC06D60F6X1SA4 be used in life-support equipment?

No-Infineon explicitly restricts use in life-support devices or systems unless approved in writing. This bare die lacks redundant safety certification and is not qualified for implantable or critical human-safety applications per Infineon's legal disclaimer.

SIDC06D60F6X1SA4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 15A

Voltage - Forward (Vf) (Max) @ If:: 1.6 V @ 15 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 27 µA @ 600 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

Operating Temperature - Junction:: -40°C ~ 175°C

SIDC06D60F6X1SA4 FAQ

1.How can I place an order for SIDC06D60F6X1SA4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC06D60F6X1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC06D60F6X1SA4 reliable?

The price and inventory of SIDC06D60F6X1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC06D60F6X1SA4 is usually 5 days.

3.What payment methods are accepted for SIDC06D60F6X1SA4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC06D60F6X1SA4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC06D60F6X1SA4?

SIDC06D60F6X1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC06D60F6X1SA4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC06D60F6X1SA4?

For technical support, including SIDC06D60F6X1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC06D60F6X1SA4 requirements.

6.How does Aetrix verify that SIDC06D60F6X1SA4 is sourced from the original manufacturer or authorized distributors?

All SIDC06D60F6X1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC06D60F6X1SA4 meets industry standards.

7.What is the process for return or replacement of SIDC06D60F6X1SA4?

All SIDC06D60F6X1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC06D60F6X1SA4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC06D60F6X1SA4 part is unused and in its original packaging.

Return procedure for SIDC06D60F6X1SA4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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