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Infineon Technologies SIDC06D65C8X1SA1
- Part No.:
- SIDC06D65C8X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC06D65C8X1SA1.pdf
- Description:
- DIODE GEN PURP 650V 20A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:9,183
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Product details
Overview
SIDC06D65C8X1SA1 from Infineon Technologies is a 650 V, 20 A fast-switching silicon power diode die in EMCON 3 technology with 65 µm thickness, soft reverse recovery (low Qrr), and low forward voltage drop (VF = 1.23–1.87 V @ 20 A, 25 °C), designed for integration into power modules and discrete assemblies in resonant converters.
For engineers reviewing the SIDC06D65C8X1SA1 datasheet, SIDC06D65C8X1SA1 pinout (anode/cathode terminals), SIDC06D65C8X1SA1 application in motor drives or white goods inverters, or SIDC06D65C8X1SA1 equivalent bare-die diodes, this page delivers verified die-level specifications, JEDEC-qualified thermal and switching behavior, and module-integration guidance without wafer-level assumptions.
Technical Context
This bare die uses Infineon's EMCON 3 process with 65 µm thickness to achieve soft, fast switching and low reverse recovery charge (Qrr), critical for ZVS/ZCS topologies. Its 2.34 × 2.42 mm² active area and AlSiCu front-side metallization support high-current wire bonding (Al ≤500 µm) and electrically conductive epoxy or soft-solder die attach.
Rated for Tvj = –40 to +175 °C and VRRM = 650 V, it delivers IFRM = 40 A peak repetitive current at Tvj < 150 °C. Reverse leakage is specified at 0.24 µA @ VR = 650 V, and VF remains stable across temperature (1.5 V typ. @ 20 A, 150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum blocking voltage under repetitive conditions, enabling use in 600 V-class DC bus systems. |
| IF (nom) | 20 A @ Tc = 100 °C - Continuous forward current rating defined at case temperature, verified by characterization. |
| VF | 1.23–1.87 V @ 20 A, 25 °C - Low conduction loss window supporting high-efficiency inverter stages. |
| Tvj range | –40 to +175 °C - Wide junction temperature operation enables compact thermal design in sealed modules. |
| Die size | 2.34 × 2.42 mm² - Standardized footprint for automated pick-and-place and module layout compatibility. |
| Thickness | 65 µm - Thin die optimized for low Qrr and soft recovery in high-frequency resonant applications. |
| IR | 0.24 µA @ VR = 650 V - Ultra-low leakage ensures minimal standby loss in high-voltage hold-off circuits. |
Pinout & Package
Package: Bare die (sawn on foil), no leadframe or molded package. Supplied as individual chip on carrier foil for module assembly or discrete mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad | Forward current entry point | 1.91 × 1.99 mm² AlSiCu metallized surface for wire bonding or solder attach; defines primary current path into P+ region. |
| Cathode backside | Forward current exit / reverse blocking terminal | Ni/Ag metallization system optimized for low-resistance, thermally robust die bonding to DBC or AMB substrates. |
Key Features
| Feature | Design Value |
|---|---|
| Soft, fast switching | Low Qrr and controlled tail current minimize EMI and switching losses in hard- and soft-switched topologies. |
| EMCON 3 technology | 65 µm thin die with tailored lifetime control enables precise trade-off between VF, Qrr, and ruggedness. |
| Small temperature coefficient of VF | VF increases only to 1.5 V @ 150 °C (20 A), ensuring stable conduction loss across operating range. |
| JEDEC qualification | Qualified per JEDEC standards for power module and discrete applications-validating reliability under thermal cycling and humidity stress. |
Applications
| Motor Drives | White Goods Inverters |
|---|---|
Use Scenario: IGBT half-bridge freewheeling path in variable-speed compressor drives for refrigerators and washing machines. IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss, soft-recovery current recirculation during IGBT turn-off. Use Value: Reduces voltage overshoot and EMI vs. standard FRDs, enabling higher switching frequencies without snubber redesign. | Use Scenario: Output rectification in resonant LLC converters powering induction cooktops and HVAC fan motors. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-frequency (>100 kHz) resonant topologies requiring low Qrr. Use Value: Enables ZVS operation with <0.24 µA leakage at 650 V, minimizing dead-time losses and improving light-load efficiency. |
| Industrial Power Modules | Renewable Energy Converters |
Use Scenario: Embedded in 650 V 3-phase power modules for servo drives and UPS systems. IC Role / Device Role / Timing Role: Integrated freewheeling diode paired with trench-stop IGBTs in press-pack or soldered module formats. Use Value: 2.34 × 2.42 mm² footprint and Ni/Ag backside enable direct die-to-DBC bonding, reducing thermal resistance by up to 0.3 K/W vs. packaged alternatives. | Use Scenario: Boost stage freewheeling diode in string inverters for solar PV systems with 600 V DC input. IC Role / Device Role / Timing Role: High-reliability, high-temperature diode handling 40 A peak current during MPPT transients. Use Value: Rated for Tvj up to +175 °C and qualified per JEDEC, supporting extended field life in unventilated outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching silicon diode die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-16N1 | 1600 V rating, larger die (4.5 × 4.5 mm²), higher VF (1.95 V typ.), not EMCON-optimized | Targeted at medium-voltage industrial drives, not resonant topologies | Select when >1000 V blocking is required; avoid for 650 V ZVS designs due to excessive Qrr. |
| STMicroelectronics STTH30L06CW | 600 V, TO-247 packaged device, VF = 1.7 V @ 30 A, Qrr ~50% higher than SIDC06D65C8X1SA1 | Discrete PCB-mount solution; lacks bare-die thermal and layout flexibility | Choose for prototyping or low-volume discrete builds; not suitable for high-power module integration. |
Compared with MDD100-16N1 and STTH30L06CW, SIDC06D65C8X1SA1 uniquely balances 650 V rating, ultra-low Qrr, and bare-die form factor-enabling lower conduction/switching loss and superior thermal performance in space-constrained, high-frequency power modules.
Availability
SIDC06D65C8X1SA1 is available at Aetrix Electronics and suitable for motor drives, white goods inverters, and renewable energy converters requiring stable component supply and JEDEC-qualified bare-die reliability.
Supply support for SIDC06D65C8X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
SIDC06D65C8X1SA1 belongs to Infineon's EMCON 3 fast diode die product line, engineered specifically for high-efficiency, high-frequency power modules in industrial and consumer inverters.
FAQ
Is SIDC06D65C8X1SA1 supplied in tape-and-reel or waffle pack?
No. SIDC06D65C8X1SA1 is delivered as bare die on foil carrier, pre-sawn and individually inspected per AQL 0.65 visual standard. It is not supplied in tape-and-reel, waffle pack, or any assembled package format-intended exclusively for module-level integration or discrete die mounting.
What is the maximum allowable wire bond diameter for the anode pad?
The anode pad supports aluminum wire bonding with diameter ≤500 µm, as specified in the mechanical parameters. Larger wires risk pad lift or cratering; 300–400 µm Al wire is recommended for optimal bond strength and thermal cycle reliability in power modules.
Does SIDC06D65C8X1SA1 require baking before assembly?
Yes. As an electrostatic discharge sensitive device (ESDS) stored in air, open MBB bags must be baked per IEC 62258-3: 125 °C for 24 hours prior to die attach if exposed >6 months or in ambient >25% RH. Nitrogen-stored dies do not require baking.
Can SIDC06D65C8X1SA1 be used in automotive applications?
Only with explicit written approval from Infineon Technologies. While JEDEC-qualified for industrial and consumer applications, automotive use-including in ADAS or powertrain systems-requires separate qualification and safety documentation per ISO 26262, which is not included in this die data sheet.
SIDC06D65C8X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 1.87 V @ 20 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 240 nA @ 650 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC06D65C8X1SA1 FAQ
1.How can I place an order for SIDC06D65C8X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC06D65C8X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC06D65C8X1SA1 reliable?
The price and inventory of SIDC06D65C8X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC06D65C8X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC06D65C8X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC06D65C8X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC06D65C8X1SA1?
SIDC06D65C8X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC06D65C8X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC06D65C8X1SA1?
For technical support, including SIDC06D65C8X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC06D65C8X1SA1 requirements.
6.How does Aetrix verify that SIDC06D65C8X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC06D65C8X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC06D65C8X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC06D65C8X1SA1?
All SIDC06D65C8X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC06D65C8X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC06D65C8X1SA1 part is unused and in its original packaging.
Return procedure for SIDC06D65C8X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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