Infineon Technologies SIDC07D60E6X1SA3

Overview

SIDC07D60E6 from Infineon Technologies is a 600 V, 15 A fast-switching silicon power diode chip fabricated using EMCON technology with 70 µm die thickness, optimized for soft reverse recovery and low Q_rr in high-frequency resonant converters and motor drives. It features 1.25 V forward voltage at 15 A (T_j = 25 °C), 2.2 µC reverse recovery charge at 125 °C, and operates from –55 °C to +150 °C junction temperature.

For engineers reviewing the SIDC07D60E6 datasheet, SIDC07D60E6 pinout, SIDC07D60E6 application, or SIDC07D60E6 equivalent, this bare die requires conductive die attach and aluminum wire bonding (≤500 µm) on compatible substrates - critical for SMPS flyback/frequency-doubler topologies, IGBT co-packaged freewheeling, and industrial inverter snubber networks where soft switching and thermal stability are design-critical.

Technical Context

This die implements a planar, lightly doped n-type epitaxial structure with AlSiCu anode metallization (3200 nm) and Ni/Ag cathode (1400 nm), enabling controlled carrier lifetime for soft recovery. Its 2.65 × 2.65 mm² active area (5.01 mm²) and 70 µm thickness support high current density while minimizing stored charge.

Dynamic performance is characterized at 600 A/µs di/dt and 300 V reverse bias, delivering typ. 21.6 A peak reverse recovery current (T_j = 125 °C) and softness factor S2 = 1 - confirming minimal voltage overshoot during turn-off in hard-commutated circuits.

Key Specifications

Pinout & Package

Package: Bare die (unmounted silicon chip) in EMCON process, supplied on foil with photoimide passivation, intended for conductive epoxy or solder die bonding onto ceramic or metal-base substrates. No leadframe or molded package.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-recovery diode chip applications.

Compared with MDD15-16N1 and VS-MBR1560CT, SIDC07D60E6 uniquely delivers 600 V blocking, 2.2 µC Qrr, and bare-die form factor - making it the only option for high-voltage, high-frequency hybrid module integration requiring thermal co-location with IGBTs or SiC switches.

Availability

SIDC07D60E6 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, resonant LLC converters, and IGBT module assembly requiring stable component supply of qualified bare power diode dies.

Supply support for SIDC07D60E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

SIDC07D60E6 belongs to Infineon's EMCON bare die portfolio, engineered specifically for high-reliability integration into power modules and discrete assemblies where soft switching, thermal robustness, and repeatable die-bond performance are mandatory.

FAQ

Is SIDC07D60E6 a packaged component or bare die?

SIDC07D60E6 is a bare silicon die supplied on foil with photoimide passivation - not a packaged device. It requires conductive die attach (epoxy or solder) and aluminum wire bonding (≤500 µm) onto ceramic DBC or metal-base substrates. No leadframe, molding compound, or termination is included.

What is the recommended die attach method for SIDC07D60E6?

Infineon specifies electrically conductive adhesive or solder for anode-side attachment. The 2.17 × 2.17 mm² AlSiCu anode pad supports full-area bonding; cathode-side Ni/Ag metallization is compatible with both conductive epoxies and soft solders. Thermal interface resistance must be minimized to maintain T_j ≤ 150 °C under 15 A DC load.

Does SIDC07D60E6 meet JEDEC standards for ESD sensitivity?

Yes - SIDC07D60E6 is classified as an electrostatic discharge sensitive device per MIL-STD-883, Method 3015. It requires handling in EPA environments with wrist straps, grounded work surfaces, and static-dissipative packaging. The AQL 0.65 visual inspection standard applies to die surface defects per Infineon's failure catalog.

Can SIDC07D60E6 replace standard FRDs in existing 600 V designs?

Yes, provided die mounting and wire bonding processes are qualified. Its 600 V VRRM, 15 A IF, and soft recovery profile allow direct substitution for legacy FRD dies like EUPEC B15-60, but its lower Qrr (2.2 µC vs. ~3.5 µC) may require snubber recalibration to avoid excessive dv/dt-induced gate coupling in adjacent IGBTs.