Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SIDC07D60F6X1SA1

Part No.:
SIDC07D60F6X1SA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
Die
Datasheet:
AetrixSIDC07D60F6X1SA1.pdf
Description:
DIODE GEN PURP 600V 22.5A DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,803

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIDC07D60F6X1SA1 from Infineon Technologies is a 600 V, 22.5 A fast-switching silicon power diode die using Emitter Controlled technology with 70 µm thickness, soft reverse recovery (low Qrr), and low temperature coefficient-designed for high-frequency resonant converters and IGBT co-packaged power modules in industrial SMPS and motor drives.

For engineers reviewing the SIDC07D60F6X1SA1 datasheet, SIDC07D60F6X1SA1 pinout (anode/cathode terminals), SIDC07D60F6X1SA1 application in resonant LLC topologies or IGBT hybrid modules, or SIDC07D60F6X1SA1 equivalent bare-die diodes, this page delivers verified die-level specifications, thermal and switching behavior constraints, and module-integration guidance.

Technical Context

This bare die uses Infineon's Emitter Controlled (EC) technology to achieve soft, fast reverse recovery with low Qrr (27 µA IR at 600 V, 1.6 V VF @ 22.5 A) and minimal temperature dependence-critical for ZVS operation in high-efficiency resonant converters. Its 70 µm thin wafer enables low stored charge and reduced switching losses.

The die is not rated for standalone use: switching characteristics and thermal resistance depend entirely on module-level mounting (epoxy or solder die attach), wire bonding (≤250 µm Al), and heatsink interface design. No guaranteed RthJC or trr values are provided-only wafer-level static parameters are specified.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - maximum repetitive reverse blocking voltage; defines usable DC bus voltage headroom in bridge legs
IF22.5 A - continuous forward current rating at Tvj < 150°C; sets minimum die area and thermal path requirement
VF1.6 V @ 22.5 A - forward voltage drop directly impacts conduction loss and thermal load in high-current paths
IR27 µA @ 600 V - ultra-low leakage supports stable high-voltage hold-off in standby and light-load conditions
Die size2.12 × 3.41 mm² - physical footprint determines module layout density and thermal spreading capability
Junction temp–40°C to +175°C - extended operating range enables use in high-ambient industrial and traction environments

Pinout & Package

Package: Bare die (unencapsulated silicon chip), sawn on foil, 2.12 × 3.41 mm², 70 µm thick, with frontside photoimide passivation and AlSiCu metallization. Anode pad measures 1.638 × 2.928 mm²; cathode is backside Ni/Ag metallization suitable for epoxy or soft-solder die bonding.

Pin/TerminalCircuit RoleDesign Meaning
Anode (frontside pad)Forward current entry pointLarge-area AlSiCu pad optimized for low-resistance wire bonding (Al ≤250 µm) and thermal conduction into substrate
Cathode (backside metal)Forward current exit / reverse blocking terminalNi/Ag stack enables reliable conductive die attach to DBC or direct copper substrates; defines primary thermal path to heatsink

Key Features

FeatureDesign Value
Emitter Controlled (EC) structureEnables soft reverse recovery with low Qrr, reducing EMI and snubber stress in high-frequency switching
70 µm thin dieMinimizes stored charge and improves dynamic ruggedness under high dv/dt conditions
Low VF (1.6 V @ 22.5 A)Reduces conduction loss by ~15% vs. standard 600 V fast diodes, lowering thermal design burden
Small temp. coefficient of VFEnsures stable forward drop across –40°C to +150°C, critical for predictable loss modeling in wide-temp systems

Applications

Resonant LLC ConvertersIGBT Hybrid Power Modules

Use Scenario: High-efficiency 100–500 kHz DC-DC conversion in server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Secondary-side freewheeling diode in synchronous rectified LLC half-bridge output stage.

Use Value: Low Qrr and soft recovery minimize turn-on loss and EMI during zero-voltage switching transitions.

Use Scenario: Co-packaged anti-parallel diode in 650 V IGBT-based motor drive inverters.

IC Role / Device Role / Timing Role: Integrated freewheeling path for inductive load current commutation during IGBT off-state.

Use Value: Matched thermal expansion and compact die size enable reliable integration with IGBT dies in single-baseplate modules.

Industrial SMPS Front-EndHigh-Temp Motor Drives

Use Scenario: PFC boost diode in 3 kW industrial switch-mode power supplies operating at 70°C ambient.

IC Role / Device Role / Timing Role: Fast-recovery boost rectifier handling 22.5 A average current with 600 V blocking.

Use Value: Stable VF and low IR ensure consistent efficiency and reliability across full temperature range.

Use Scenario: Traction inverter auxiliary power supply in electric forklifts and pumps.

IC Role / Device Role / Timing Role: Output rectifier in isolated DC-DC converter supplying gate drivers and control logic.

Use Value: 175°C max junction temperature rating supports operation in sealed, high-ambient enclosures without derating.

Availability

SIDC07D60F6X1SA1 is available at Aetrix Electronics and suitable for industrial SMPS, motor drive inverters, and resonant converter designs requiring stable component supply, traceable bare-die sourcing, and long-lifecycle continuity.

Supply support for SIDC07D60F6X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

SIDC07D60F6X1SA1 belongs to Infineon's high-voltage fast diode die portfolio, engineered specifically for integration into compact, high-efficiency power modules targeting industrial and renewable energy applications.

FAQ

Is SIDC07D60F6X1SA1 supplied in tape-and-reel or waffle pack?

No-it is shipped as loose bare dies on foil, intended for automated die placement in module assembly. Packaging format is defined per customer order (e.g., die-on-tape or die-in-tray); no standard reel packaging applies.

Can SIDC07D60F6X1SA1 be used as a discrete surface-mount diode?

No. It is an unencapsulated die requiring module-level integration: die attach, wire bonding, and hermetic or molded encapsulation. It lacks leads, package markings, or standalone isolation.

What is the maximum allowable wire bond diameter for this die?

Aluminum wire diameter must not exceed 250 µm. Larger wires risk pad lift or cratering due to mechanical stress on the 1.638 × 2.928 mm² anode pad; bond force and ultrasonic energy must be qualified per process validation.

Does SIDC07D60F6X1SA1 have qualified automotive AEC-Q101 stress test data?

No. This die is qualified per Infineon's industrial reliability standards (not AEC-Q101). It is rated for industrial temperature range (–40°C to +175°C) but has no automotive qualification documentation or stress report.

SIDC07D60F6X1SA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
22.5A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 22.5 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Operating Temperature - Junction:
-40°C ~ 175°C

SIDC07D60F6X1SA1 FAQ

1.How can I place an order for SIDC07D60F6X1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC07D60F6X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC07D60F6X1SA1 reliable?

The price and inventory of SIDC07D60F6X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC07D60F6X1SA1 is usually 5 days.

3.What payment methods are accepted for SIDC07D60F6X1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC07D60F6X1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC07D60F6X1SA1?

SIDC07D60F6X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC07D60F6X1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC07D60F6X1SA1?

For technical support, including SIDC07D60F6X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC07D60F6X1SA1 requirements.

6.How does Aetrix verify that SIDC07D60F6X1SA1 is sourced from the original manufacturer or authorized distributors?

All SIDC07D60F6X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC07D60F6X1SA1 meets industry standards.

7.What is the process for return or replacement of SIDC07D60F6X1SA1?

All SIDC07D60F6X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC07D60F6X1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC07D60F6X1SA1 part is unused and in its original packaging.

Return procedure for SIDC07D60F6X1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIDC07D60F6X1SA1 Tags

  • SIDC07D60F6X1SA1
  • SIDC07D60F6X1SA1 PDF
  • SIDC07D60F6X1SA1 Datasheet
  • SIDC07D60F6X1SA1 Specifications
  • SIDC07D60F6X1SA1 Images
  • Infineon Technologies
  • Infineon Technologies SIDC07D60F6X1SA1
  • Buy SIDC07D60F6X1SA1
  • SIDC07D60F6X1SA1 Price
  • SIDC07D60F6X1SA1 Distributor
  • SIDC07D60F6X1SA1 Supplier
  • SIDC07D60F6X1SA1 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER