Infineon Technologies SIDC07D60F6X1SA3

Overview

SIDC07D60F6X1SA3 from Infineon Technologies is a 600 V, 22.5 A fast-switching silicon power diode die featuring Emitter Controlled technology, 70 µm chip thickness, soft reverse recovery (low Q_rr), and low temperature coefficient of forward voltage. It is designed for integration into discrete devices and power modules used in high-frequency SMPS and resonant converters.

For engineers reviewing the SIDC07D60F6X1SA3 datasheet, SIDC07D60F6X1SA3 pinout (anode/cathode terminals), SIDC07D60F6X1SA3 application in resonant LLC topologies or motor drives, or SIDC07D60F6X1SA3 equivalent bare-die diodes, this page provides verified die-level specifications, thermal and switching behavior context, and module-integration guidance.

Technical Context

This bare die uses Infineon's Emitter Controlled (EC) technology to achieve soft, fast reverse recovery with low Q_rr (27 µA I_R at 600 V, 1.6 V V_F at 22.5 A), enabling reduced switching losses and EMI in hard- and resonant-switched converters. Its 70 µm thin wafer design supports high thermal conductivity when mounted on DBC or IMS substrates.

The die operates across –40 °C to +150 °C junction temperature range, with maximum repetitive forward current rated at 45 A under T_vj < 150 °C - dependent on thermal resistance of the final module assembly. Dynamic ruggedness is verified by design (not production-tested) for I_Fmax = 45 A and V_Rmax = 600 V.

Key Specifications

Pinout & Package

Package: Bare die (unpacked silicon chip), sawn on foil, 2.12 × 3.41 mm² active area, 70 µm thickness, photoimide passivation, AlSiCu front metallization (3200 nm), Ni/Ag backside metallization suitable for epoxy or soft-solder die attach.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching silicon diode die applications.

Compared with MDD150-16N1 and VS-20CPH06-M3, SIDC07D60F6X1SA3 offers optimal balance of compact size, low Q_rr, and thermal scalability for high-frequency, space-constrained power modules - especially where die-level integration and thermal optimization are prioritized over off-the-shelf convenience.

Availability

SIDC07D60F6X1SA3 is available at Aetrix Electronics and suitable for industrial SMPS, resonant LLC converters, and motor drive inverter stages requiring stable component supply, consistent die-to-die parametric uniformity, and traceable wafer-lot sourcing.

Supply support for SIDC07D60F6X1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with core expertise in energy-efficient power conversion and automotive electronics.

SIDC07D60F6X1SA3 belongs to Infineon's high-performance silicon fast diode die portfolio, engineered specifically for integration into next-generation power modules targeting high-frequency, high-efficiency industrial and renewable energy systems.

FAQ

Is SIDC07D60F6X1SA3 supplied in tape-and-reel or waffle pack?

No - SIDC07D60F6X1SA3 is delivered as bare die on foil, not in carrier packaging. It is intended for automated die-attach processes in module manufacturing. Handling requires ESD-safe tools and nitrogen-controlled storage per Infineon's recommendation: dry nitrogen, dark environment, ≤6 months at 23 °C.

What wire bonding material and diameter is qualified for this die?

Aluminum wire ≤250 µm is specified for anode pad bonding. The 1.638 × 2.928 mm² AlSiCu pad supports standard wedge or ball bonding. Gold or copper wire is not qualified; bond parameters must follow Infineon's L4364M process guidelines to avoid pad lift or intermetallic degradation.

Does this die support solder die-attach, and what solder alloys are recommended?

Yes - the Ni/Ag backside metallization is qualified for both soft-solder (SnPb, SnAgCu) and high-temperature solder (e.g., AuSn). Solder reflow profiles must limit peak temperature to ≤260 °C to prevent AlSiCu pad oxidation and maintain wire bondability. Epoxy die attach is also supported for lower-thermal-conductivity applications.

Can SIDC07D60F6X1SA3 be used in automotive-grade modules?

It meets AEC-Q101 stress test requirements *by design verification*, but is not AEC-Q101 certified out-of-box. For automotive use, Infineon recommends qualification testing per customer-specific module-level AEC-Q104 protocols, including thermal cycling, humidity bias, and vibration tests aligned with the final package construction.