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Infineon Technologies SIDC07D60F6X1SA5
- Part No.:
- SIDC07D60F6X1SA5
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC07D60F6X1SA5.pdf
- Description:
- DIODE GEN PURP 600V 22.5A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:6,529
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Product details
Overview
SIDC07D60F6X1SA5 from Infineon Technologies is a 600 V, 22.5 A fast-switching silicon power diode die with emitter-controlled technology, 70 µm thickness, soft recovery behavior, and low reverse recovery charge (Qrr). It is designed for integration into discrete devices and power modules used in resonant SMPS and motor drives.
For engineers reviewing the SIDC07D60F6X1SA5 datasheet, SIDC07D60F6X1SA5 pinout (anode/cathode terminals), SIDC07D60F6X1SA5 application in high-frequency switching topologies, or SIDC07D60F6X1SA5 equivalent bare-die diodes, this page delivers verified die-level specifications, thermal ruggedness context, and module-integration guidance without package assumptions.
Technical Context
This bare die uses Infineon's Emitter Controlled (EC) technology to achieve soft, fast reverse recovery with low Qrr (typ. < 100 nC at IF = 22.5 A, dI/dt = 100 A/µs) and minimal temperature coefficient of forward voltage. Its 70 µm thin wafer enables low stored charge and high dynamic ruggedness.
The die features photoimide passivation, AlSiCu front-side metallization (3200 nm), and Ni/Ag backside metallization compatible with epoxy or soft-solder die bonding. No standardized leadframe or package is assigned - it is supplied as a sawn-on-foil die (2.12 × 3.41 mm²) for custom module assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - maximum repetitive reverse blocking voltage; defines safe operating range in bridge or clamp configurations |
| IF | 22.5 A - continuous forward current rating at Tvj < 150 °C; sets baseline conduction capability under thermal design constraints |
| VF | 1.6 V @ IF = 22.5 A - forward voltage drop directly impacts conduction loss and thermal load in high-duty-cycle operation |
| Qrr | Low - confirmed soft/fast switching behavior reduces EMI and snubber stress in ZVS/ZCS resonant converters |
| Tvj Range | –40 °C to +175 °C - extended junction temperature range supports high-ambient industrial and traction applications |
| Die Size | 2.12 × 3.41 mm² - physical footprint critical for thermal resistance optimization and module layout density |
Pinout & Package
Package: Bare die on foil, unmounted, sawn; no molded package or leadframe. Dimensions: 2.12 mm × 3.41 mm × 70 µm. Anode pad size: 1.638 mm × 2.928 mm. Backside metallization: Ni/Ag system for conductive epoxy or soft-solder attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (front-side pad) | Current entry point during forward conduction | AlSiCu metallized surface (1.638 × 2.928 mm²); wire-bondable with ≤250 µm Al wire |
| Cathode (back-side metal) | Current exit path and thermal interface | Ni/Ag layer optimized for low-resistance, thermally conductive die attach to DBC or direct copper substrates |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EC) Technology | Enables soft reverse recovery with low Qrr, reducing voltage overshoot and EMI in hard- and resonant-switching topologies |
| 70 µm Thin Wafer | Minimizes stored charge and improves switching speed while maintaining ruggedness under high dv/dt conditions |
| Photoimide Passivation | Provides stable, moisture-resistant surface protection suitable for high-reliability module encapsulation processes |
| Ni/Ag Backside Metallization | Enables robust, low-void die bonding using either conductive epoxy or soft solder - critical for thermal cycling reliability |
Applications
| Resonant LLC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: High-efficiency 100–500 kHz DC-DC conversion in server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Freewheeling/commutation diode in synchronous rectification or secondary-side clamp circuits. Use Value: Low Qrr and soft recovery minimize turn-off losses and reduce snubber component count and size. | Use Scenario: Inverter output stage in HVAC compressors and pump drives requiring >100 kcycles lifetime. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode across IGBTs in 3-phase inverter legs. Use Value: Stable VF temperature coefficient ensures balanced current sharing and predictable thermal rise across parallel dies. |
| High-Density Power Modules | Renewable Energy Inverters |
Use Scenario: Compact half-bridge modules for EV onboard chargers and bidirectional DC-DC converters. IC Role / Device Role / Timing Role: Integrated freewheeling element in hybrid-packaged Si/SiC modules. Use Value: 2.12 × 3.41 mm² footprint allows precise die placement and thermal interface optimization with DBC substrates. | Use Scenario: String-level DC optimizers and central inverters in solar farms operating at 600 V bus. IC Role / Device Role / Timing Role: Boost-stage freewheeling diode handling intermittent high-current pulses. Use Value: –40 °C to +175 °C Tvj range supports outdoor deployment with wide ambient swings and high internal heating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching bare-die diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDP07E60F6X1SA5 | Same die size and VRRM, but uses Enhanced Emitter Controlled (EEC) process; typ. VF = 1.55 V @ 22.5 A | Better conduction efficiency in low-frequency, high-duty-cycle operation; slightly higher Qrr | Prefer when minimizing conduction loss dominates over switching loss in <100 kHz designs |
| IDD07SG60C6X1SA5 | 600 V, 25 A rated, SiC Schottky die; zero Qrr, VF = 1.7 V @ 22.5 A, Tvj up to 200 °C | No reverse recovery; requires gate-drive isolation and different thermal interface design | Select only when ultra-low EMI, zero-recovery operation, and >175 °C capability justify SiC cost and layout changes |
Compared with IDP07E60F6X1SA5, SIDC07D60F6X1SA5 offers softer recovery for reduced voltage ringing in resonant topologies; versus IDD07SG60C6X1SA5, it avoids SiC-specific layout constraints while delivering proven ruggedness in established Si-based module platforms.
Availability
SIDC07D60F6X1SA5 is available at Aetrix Electronics and suitable for resonant SMPS, industrial motor drives, and high-density power modules requiring stable component supply, consistent die-to-die parametric matching, and traceable wafer-lot sourcing.
Supply support for SIDC07D60F6X1SA5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, headquartered in Munich.
SIDC07D60F6X1SA5 belongs to Infineon's "Fast Switching Diode Die" product line, engineered specifically for high-reliability integration into custom power modules targeting resonant converters and industrial drive systems.
FAQ
Is SIDC07D60F6X1SA5 supplied in tape-and-reel or waffle pack?
No - SIDC07D60F6X1SA5 is delivered as a bare die on foil, not in standard packaging formats. It requires custom handling and die-attach tooling. Storage must follow Infineon's specification: dry nitrogen, dark environment, ≤23 °C, and ≤6 months from date of shipment.
Does this die include integrated ESD protection?
No - SIDC07D60F6X1SA5 is classified as an electrostatic discharge sensitive device (per MIL-STD-883), but it has no on-die ESD protection structure. Handling requires Class 0 ESD controls, including grounded workstations, ionized air, and shielded transport containers.
Can SIDC07D60F6X1SA5 be used in parallel configurations?
Yes - its low and stable temperature coefficient of VF enables predictable current sharing in parallel die arrangements. Successful implementation requires matched die placement, symmetric thermal paths, and low-inductance interconnects to avoid dynamic imbalance during switching transitions.
What is the maximum allowable mounting pressure during die attach?
Infineon does not specify a maximum mounting pressure; instead, it mandates void-free bonding with ≤5% void area. Recommended bond line thickness is 25–50 µm for epoxy and 10–20 µm for soft solder. Excessive pressure risks die fracture due to its 70 µm thickness and brittle silicon substrate.
SIDC07D60F6X1SA5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 22.5A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 22.5 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC07D60F6X1SA5 FAQ
1.How can I place an order for SIDC07D60F6X1SA5 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC07D60F6X1SA5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC07D60F6X1SA5 reliable?
The price and inventory of SIDC07D60F6X1SA5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC07D60F6X1SA5 is usually 5 days.
3.What payment methods are accepted for SIDC07D60F6X1SA5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC07D60F6X1SA5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC07D60F6X1SA5?
SIDC07D60F6X1SA5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC07D60F6X1SA5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC07D60F6X1SA5?
For technical support, including SIDC07D60F6X1SA5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC07D60F6X1SA5 requirements.
6.How does Aetrix verify that SIDC07D60F6X1SA5 is sourced from the original manufacturer or authorized distributors?
All SIDC07D60F6X1SA5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC07D60F6X1SA5 meets industry standards.
7.What is the process for return or replacement of SIDC07D60F6X1SA5?
All SIDC07D60F6X1SA5 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC07D60F6X1SA5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC07D60F6X1SA5 part is unused and in its original packaging.
Return procedure for SIDC07D60F6X1SA5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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