Infineon Technologies SIDC09D60E6X1SA3

Overview

SIDC09D60E6X1SA3 from Infineon Technologies is a 600 V, 20 A fast-switching silicon power diode chip fabricated using EMCON technology on a 70 µm thick die with 3 × 3 mm² footprint. It delivers soft recovery, low Qrr (1.7–2.7 µC), and stable VF (1.25–1.7 V at 20 A) for high-efficiency resonant SMPS and motor drive inverters.

For engineers reviewing the SIDC09D60E6X1SA3 datasheet, SIDC09D60E6X1SA3 pinout, SIDC09D60E6X1SA3 application, or SIDC09D60E6X1SA3 equivalent, key selection criteria include reverse recovery time (150–200 ns), temperature-stable leakage (<27 µA at 600 V), and compatibility with conductive epoxy or solder die-attach in discrete and module packaging.

Technical Context

This diode chip employs Infineon's EMCON process to achieve controlled carrier lifetime and optimized doping profiles, enabling soft reverse recovery with minimal voltage overshoot under high di/dt (700–900 A/µs). Its 70 µm thickness and photoimide passivation support thermal robustness up to +150 °C junction temperature.

Designed for bare-die integration, it features AlSiCu anode metallization (3200 nm) and Ni/Ag cathode (1400 nm), qualified for wire bonding with ≤500 µm Al wires and compatible with both epoxy and soft-solder die attach. No integrated package-requires external mounting and interconnection.

Key Specifications

Pinout & Package

Package: Bare die (no leadframe or molded package); 3 × 3 mm² total area, 6.7 mm² active area; 70 µm thickness; anode pad 2.51 × 2.51 mm²; photoimide passivation; flat orientation at 180°.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-recovery diode chip applications.

Compared with MBR2060CT and STTH2006D, SIDC09D60E6X1SA3 offers superior softness and thinner die for lower R_thJC, making it optimal for high-power-density module integration-whereas alternatives trade softness for ease of through-hole assembly or lower VF at the expense of EMI control.

Availability

SIDC09D60E6X1SA3 is available at Aetrix Electronics and suitable for resonant LLC converters, industrial motor drives, server PSUs, and renewable energy inverters requiring stable component supply and qualified bare-die sourcing.

Supply support for SIDC09D60E6X1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.

SIDC09D60E6X1SA3 belongs to Infineon's EMCON bare-die diode product line, engineered specifically for high-frequency, high-reliability power conversion modules used in industrial and renewable energy systems.

FAQ

Is SIDC09D60E6X1SA3 supplied in a packaged form or as a bare die?

SIDC09D60E6X1SA3 is supplied exclusively as a bare die-no leadframe, molding compound, or termination. It measures 3 × 3 mm² with 70 µm thickness, intended for direct die-attach into power modules or custom substrates using conductive epoxy or solder. No TO-220, DPAK, or SMD package variants exist for this part number.

What die-attach methods are qualified for SIDC09D60E6X1SA3?

Infineon qualifies both electrically conductive epoxy and soft-solder (e.g., SnAgCu) for anode-down or cathode-down mounting. The AlSiCu anode (3200 nm) and Ni/Ag cathode (1400 nm) metallizations are process-validated for shear strength ≥25 MPa and thermal cycling reliability per JEDEC JESD22-A104. Conductive glue is preferred for thermal stress mitigation in multi-die modules.

Does SIDC09D60E6X1SA3 require gate driving or external control signals?

No. SIDC09D60E6X1SA3 is a passive two-terminal power diode with no gate, control pin, or bias requirement. It operates solely based on forward/reverse voltage polarity and current direction. All electrical behavior-including t_rr, Qrr, and VF-is intrinsic to its silicon structure and EMCON process; no external timing or drive circuitry is involved.

Can SIDC09D60E6X1SA3 be used in life-support equipment?

No. Per Infineon's official warning, this component is not approved for use in life-support devices or systems without express written authorization. Its qualification covers industrial, computing, and renewable energy applications-not medical implants, ventilators, or critical-care monitoring where single-point failure could endanger human life.