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Infineon Technologies SIDC09D60F6X1SA1
- Part No.:
- SIDC09D60F6X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC09D60F6X1SA1.pdf
- Description:
- DIODE GEN PURP 600V 30A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:6,554
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Product details
Overview
SIDC09D60F6X1SA1 from Infineon Technologies is a 600 V, 30 A fast-switching silicon power diode die fabricated using Emitter Controlled technology with 70 µm thickness and 3 × 3 mm² chip area. It delivers soft recovery, low reverse recovery charge (Qrr), and stable thermal coefficient, targeting high-efficiency resonant SMPS and motor drive modules.
For engineers reviewing the SIDC09D60F6X1SA1 datasheet, SIDC09D60F6X1SA1 pinout, SIDC09D60F6X1SA1 application, or SIDC09D60F6X1SA1 equivalent, key selection criteria include its 600 V repetitive peak reverse voltage, 30 A forward current rating at Tvj < 150 °C, soft switching behavior, wafer-level tested VF = 1.6 V @ 30 A, and suitability for epoxy or soft-solder die bonding in power modules.
Technical Context
This bare die implements Emitter Controlled (EC) technology to achieve controlled carrier lifetime and reduced tail current during turn-off. Its 70 µm thickness and photoimide passivation enable optimized trade-offs between forward conduction loss and switching speed.
Dynamic ruggedness is verified by design for IFmax = 60 A and VRmax = 600 V at Tvj ≤ 150 °C, though switching characteristics and thermal resistance depend entirely on module-level mounting and heatsinking - no values are specified for the die alone.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - maximum repetitive reverse blocking voltage; defines safe operating range in bridge or clamp configurations |
| IF | 30 A - continuous forward current at junction temperature < 150 °C; sets baseline conduction capability in module layout |
| VF @ 30 A | 1.6 V - forward voltage drop measured on wafer at 25 °C; directly impacts conduction loss in final assembly |
| IR @ 600 V | 27 µA - reverse leakage at rated voltage; indicates low off-state power loss and thermal stability |
| Chip size | 3 × 3 mm² - die footprint determines minimum module substrate area and thermal spreading design |
| Junction temp. range | –40 to +175 °C - extended operational range supports high-temperature industrial and traction applications |
Pinout & Package
Package: Bare die (unmounted silicon chip), 3 × 3 mm², 70 µm thick, anode pad size 2.518 × 2.518 mm², frontside photoimide passivation, Ni/Ag backside metallization suitable for epoxy or soft-solder die attach.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad | Forward current entry point | Large-area AlSiCu metallization (2.518 × 2.518 mm²) enables low-resistance bond interface and thermal conduction to substrate |
| Cathode surface | Forward current exit / reverse blocking terminal | Backside Ni/Ag metallization provides solderable or conductive-epoxy compatible interface for thermal and electrical connection |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled technology | Enables precise control of carrier lifetime for soft, low-noise turn-off without external snubbers |
| Low Qrr | Reduces switching losses and EMI in high-frequency resonant converters (e.g., LLC) |
| Small temperature coefficient of VF | Ensures stable forward drop across –40 to +150 °C, critical for parallel diode operation |
| Wafer-level tested parameters | VBR ≥ 600 V @ IR = 1.5 mA and VF = 1.6 V @ 30 A confirmed pre-dicing, improving BOM yield predictability |
Applications
| Resonant LLC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: High-frequency (100–500 kHz) secondary-side rectification in server/telecom LLC power supplies. IC Role / Device Role / Timing Role: Fast-recovery output rectifier handling bidirectional current flow during resonance. Use Value: Low Qrr and soft switching minimize voltage overshoot and reduce snubber losses by >25% vs. standard FRDs. | Use Scenario: Freewheeling path in 3-phase IGBT-based VFDs for HVAC and pump systems. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode integrated into power modules for regenerative braking energy return. Use Value: Stable VF over temperature ensures balanced current sharing across paralleled modules up to 150 °C junction. |
| UPS Inverter Stages | Traction Inverters (Auxiliary) |
Use Scenario: DC-link clamping and regeneration path in double-conversion online UPS systems. IC Role / Device Role / Timing Role: Clamp diode absorbing inductive kickback during IGBT commutation. Use Value: 600 V VRRM and dynamic ruggedness support reliable operation under transient overvoltage conditions up to 600 V. | Use Scenario: Auxiliary DC-DC converter in rail or EV battery management subsystems. IC Role / Device Role / Timing Role: Output rectifier in isolated flyback or forward converters powering control logic. Use Value: Extended Tvj range (–40 to +175 °C) allows direct integration into high-temp engine bay or under-hood environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching power diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-16N1B | 1600 V, 100 A module-integrated diode; larger die, higher VR, not bare die | Targeted for medium-voltage industrial drives, not resonant SMPS | Select only when system requires >1000 V blocking or pre-packaged module integration |
| STMicroelectronics STTH30L06CW | 600 V, 30 A TO-247 packaged diode; slower recovery, higher Qrr, discrete package | Used in lower-frequency hard-switched PFC and boost stages | Choose only if board-level discrete mounting is required and soft switching is not critical |
Compared with MDD100-16N1B and STTH30L06CW, SIDC09D60F6X1SA1 offers superior softness and lower Qrr in a bare-die format optimized for thermal integration in compact power modules - making it uniquely suited for high-frequency resonant topologies where layout parasitics and thermal coupling dominate performance.
Availability
SIDC09D60F6X1SA1 is available at Aetrix Electronics and suitable for resonant LLC converters, industrial motor drives, UPS inverter stages, and auxiliary traction DC-DC converters requiring stable component supply and wafer-level traceability.
Supply support for SIDC09D60F6X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.
SIDC09D60F6X1SA1 belongs to Infineon's high-voltage power diode die portfolio, designed specifically for integration into custom power modules targeting high-efficiency, high-power-density industrial and telecom power conversion.
FAQ
Is SIDC09D60F6X1SA1 supplied in tape-and-reel or waffle pack?
No - SIDC09D60F6X1SA1 is shipped as bare die on foil, sawn and inspected per AQL 0.65 visual standards. It is not provided in tape-and-reel or tray formats. Customers must handle via die-bonding equipment compatible with 3 × 3 mm² chips and photoimide-passivated surfaces.
Can SIDC09D60F6X1SA1 be used in parallel configurations?
Yes - its small temperature coefficient of forward voltage enables stable current sharing across paralleled dies when mounted on a common heatsink with matched thermal resistance. Designers must ensure symmetrical bond wire length and uniform die attach pressure to avoid current imbalance.
What is the maximum recommended storage duration before use?
Infineon specifies storage for ≤6 months in original nitrogen-filled container, in darkness, at 23 °C ambient. Extended storage beyond this period risks increased moisture absorption in photoimide passivation, potentially affecting wire bond reliability and long-term bias stability.
Does SIDC09D60F6X1SA1 require gate driving or external control signals?
No - SIDC09D60F6X1SA1 is a passive two-terminal power diode die with no gate or control terminals. It operates solely based on applied anode-cathode voltage polarity and magnitude, with no active circuitry or driver interface required.
SIDC09D60F6X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 30 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC09D60F6X1SA1 FAQ
1.How can I place an order for SIDC09D60F6X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC09D60F6X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC09D60F6X1SA1 reliable?
The price and inventory of SIDC09D60F6X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC09D60F6X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC09D60F6X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC09D60F6X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC09D60F6X1SA1?
SIDC09D60F6X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC09D60F6X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC09D60F6X1SA1?
For technical support, including SIDC09D60F6X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC09D60F6X1SA1 requirements.
6.How does Aetrix verify that SIDC09D60F6X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC09D60F6X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC09D60F6X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC09D60F6X1SA1?
All SIDC09D60F6X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC09D60F6X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC09D60F6X1SA1 part is unused and in its original packaging.
Return procedure for SIDC09D60F6X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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