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Infineon Technologies SIDC09D60F6X1SA4
- Part No.:
- SIDC09D60F6X1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC09D60F6X1SA4.pdf
- Description:
- DIODE GEN PURP 600V 30A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:8,517
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Product details
Overview
SIDC09D60F6X1SA4 from Infineon Technologies is a 600 V, 30 A fast-switching silicon power diode die with emitter-controlled technology, 70 µm thickness, and soft reverse recovery behavior. It is designed for discrete device assembly and power module integration in high-frequency SMPS and resonant converters operating up to 150 °C junction temperature.
For engineers reviewing the SIDC09D60F6X1SA4 datasheet, SIDC09D60F6X1SA4 pinout (anode/cathode terminals), SIDC09D60F6X1SA4 application in resonant LLC topologies, or SIDC09D60F6X1SA4 equivalent bare-die diodes, this page delivers verified die-level specifications, thermal ruggedness context, and mounting-critical electrical parameters not found in packaged part summaries.
Technical Context
This bare die uses Infineon's Emitter Controlled (EC) technology to achieve low reverse recovery charge (Qrr) and soft switching behavior-critical for reducing EMI and voltage overshoot in hard- and resonant-switched converters. Its 70 µm thin wafer enables low forward voltage (VF = 1.6 V @ 30 A) while maintaining 600 V blocking capability.
The die is characterized on-wafer at 25 °C and rated for continuous operation up to Tvj = 150 °C. Dynamic ruggedness is design-verified (not production-tested) under IFmax = 60 A and VRmax = 600 V conditions, confirming robustness against transient overcurrent and overvoltage stress in module-level applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - maximum repetitive reverse voltage; defines safe DC/peak AC blocking capability in bridge legs and clamp circuits |
| IF | 30 A - continuous forward current at Tvj < 150 °C; sets minimum heatsink and bond-wire sizing for steady-state conduction |
| VF | 1.6 V @ 30 A - forward voltage drop directly impacts conduction loss and thermal load in high-duty-cycle operation |
| IR | 27 µA @ 600 V - low leakage ensures minimal standby power loss and stable voltage hold-off at elevated temperature |
| Tvj range | –40 to +150 °C - operational junction temperature window; determines allowable ambient and cooling design margin |
| Die size | 3 × 3 mm² - physical footprint constrains module layout density and thermal spreading path design |
| Thickness | 70 µm - thin die enables low stored charge and fast switching but requires controlled die-attach pressure to avoid cracking |
Pinout & Package
Package: Bare die (unencapsulated silicon chip), 3 × 3 mm² surface-mountable die on foil carrier; no leadframe or molded body. Intended for epoxy or soft-solder die bonding onto DBC substrates or leadframes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad | Forward current entry point | 2.518 × 2.518 mm² AlSiCu metallization; primary thermal and electrical interface for high-current anode connection |
| Cathode backside | Forward current exit / reverse blocking terminal | Ni/Ag metallization optimized for conductive epoxy or solder bonding; serves as main heat extraction path |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EC) technology | Enables soft, low-Qrr reverse recovery without snubbers-reducing switching losses and EMI in >100 kHz converters |
| 70 µm thin die | Reduces minority carrier storage time and improves switching speed while maintaining 600 V breakdown integrity |
| Photoimide passivation | Frontside insulation layer resistant to wire-bonding damage and humidity ingress during module assembly and reflow |
| AlSiCu front metallization | High-conductivity, thermally stable anode pad compatible with aluminum wedge bonding ≤250 µm wire diameter |
| Electrostatic discharge rating | ESD-sensitive per MIL-STD-883; mandates grounded handling and ionized air environments during die placement |
Applications
| Resonant LLC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: High-efficiency 1–3 kW server PSU using zero-voltage switching (ZVS) topology with synchronous rectification. IC Role / Device Role / Timing Role: Freewheeling diode in half-bridge output stage; conducts during dead-time and recovers softly before ZVS transition. Use Value: Low Qrr and soft recovery minimize voltage spikes across MOSFETs, enabling reliable ZVS across full load range and input line variation. | Use Scenario: 7.5 kW variable-frequency drive inverter stage with active PFC front-end and IGBT-based motor output. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode bonded directly to IGBT die in 6-pack power module. Use Value: 150 °C max operating temperature and 60 A surge rating support high-pulse-current regeneration braking without thermal runaway. |
| Telecom Rectifier Modules | Renewable Energy Inverters |
Use Scenario: 48 V telecom rectifier with dual-phase interleaved boost PFC and isolated LLC DC–DC stage. IC Role / Device Role / Timing Role: Output rectifier in LLC secondary; operates at 300–500 kHz with high duty-cycle conduction. Use Value: 1.6 V VF reduces conduction loss by ~12% vs. standard 600 V fast diodes, improving full-load efficiency to >96%. | Use Scenario: 10 kW string inverter with three-level NPC topology and SiC hybrid modules. IC Role / Device Role / Timing Role: Clamping diode in neutral-point clamped (NPC) leg; absorbs transient overvoltage during switching transitions. Use Value: 600 V VRRM and low temperature coefficient of VF ensure stable clamping performance across –25 to +65 °C outdoor ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching bare-die diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-12N1B | 1200 V, 100 A rated; thicker die (120 µm); higher VF (2.1 V @ 30 A) | Targeted at medium-voltage industrial drives, not optimized for high-frequency SMPS | Select when system requires >1 kV blocking or higher surge current; avoid for >200 kHz resonant designs due to slower recovery |
| STMicroelectronics STTH30L06CW | 600 V, 30 A TO-247 packaged diode; includes molded case, leads, and standardized pinout | Designed for PCB-level discrete use-not for direct die bonding into modules | Choose only if module assembly infrastructure is unavailable; sacrifices thermal performance and layout flexibility of bare-die integration |
Compared with MDD100-12N1B and STTH30L06CW, SIDC09D60F6X1SA4 offers superior high-frequency switching fidelity and thermal interface control-enabling compact, high-power-density module designs where die-level customization and thermal path optimization are critical.
Availability
SIDC09D60F6X1SA4 is available at Aetrix Electronics and suitable for resonant LLC converters, industrial motor drives, and telecom rectifier modules requiring stable component supply, wafer-level traceability, and consistent die-thickness control.
Supply support for SIDC09D60F6X1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.
SIDC09D60F6X1SA4 belongs to Infineon's high-voltage fast diode die portfolio, engineered specifically for integration into custom power modules and high-efficiency switched-mode power supplies demanding soft recovery and thermal resilience.
FAQ
Is SIDC09D60F6X1SA4 supplied in tape-and-reel or waffle-pack packaging?
No. This is a bare die product shipped on foil carriers in dry nitrogen environment. It is not supplied in tape-and-reel or plastic trays. Customers receive die arrays pre-mounted on adhesive foil with ink-marked orientation, ready for pick-and-place or manual die bonding.
What is the recommended die-attach material for SIDC09D60F6X1SA4?
Infineon specifies electrically conductive epoxy or soft-solder (e.g., SnAgCu) for cathode-side attachment. The Ni/Ag backside metallization is qualified for both; epoxy is preferred for thermal cycling reliability, while solder enables higher thermal conductivity in high-power modules.
Does SIDC09D60F6X1SA4 require gate driving or external control signals?
No. It is a passive two-terminal power diode with no gate or control terminal. Operation is fully determined by circuit voltage polarity and current direction. No driver IC, bias network, or timing signal is needed-only proper thermal and mechanical mounting per Infineon's die-bonding guidelines.
Can SIDC09D60F6X1SA4 be used as a replacement for packaged 600 V TO-220 diodes?
Only in custom module designs where bare-die integration is supported. It cannot be drop-in substituted for TO-220 parts due to lack of leads, isolation, and standardized mounting holes. Direct replacement requires redesigning the thermal interface, current path, and mechanical retention scheme.
SIDC09D60F6X1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 30 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC09D60F6X1SA4 FAQ
1.How can I place an order for SIDC09D60F6X1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC09D60F6X1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC09D60F6X1SA4 reliable?
The price and inventory of SIDC09D60F6X1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC09D60F6X1SA4 is usually 5 days.
3.What payment methods are accepted for SIDC09D60F6X1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC09D60F6X1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC09D60F6X1SA4?
SIDC09D60F6X1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC09D60F6X1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC09D60F6X1SA4?
For technical support, including SIDC09D60F6X1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC09D60F6X1SA4 requirements.
6.How does Aetrix verify that SIDC09D60F6X1SA4 is sourced from the original manufacturer or authorized distributors?
All SIDC09D60F6X1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC09D60F6X1SA4 meets industry standards.
7.What is the process for return or replacement of SIDC09D60F6X1SA4?
All SIDC09D60F6X1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC09D60F6X1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC09D60F6X1SA4 part is unused and in its original packaging.
Return procedure for SIDC09D60F6X1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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