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Infineon Technologies SIDC09D60F6X1SA5
- Part No.:
- SIDC09D60F6X1SA5
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC09D60F6X1SA5.pdf
- Description:
- DIODE GEN PURP 600V 30A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:8,008
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Product details
Overview
SIDC09D60F6X1SA5 from Infineon Technologies is a 600 V, 30 A fast-switching silicon power diode die fabricated using Emitter Controlled technology with 70 µm thickness and 3 × 3 mm² chip area. It delivers soft recovery, low reverse recovery charge (Qrr), and a small temperature coefficient for stable operation in high-frequency resonant converters and motor drives.
For engineers reviewing the SIDC09D60F6X1SA5 datasheet, SIDC09D60F6X1SA5 pinout, SIDC09D60F6X1SA5 application, or SIDC09D60F6X1SA5 equivalent, key selection criteria include its 600 V repetitive peak reverse voltage, 30 A forward current rating at Tvj < 150 °C, soft switching behavior, wafer-level AlSiCu frontside metallization, and Ni/Ag backside system compatible with epoxy or soft solder die bonding.
Technical Context
This bare die implements Emitter Controlled (EC) technology to achieve controlled carrier lifetime and reduced Qrr without external lifetime-killing agents. Its 70 µm thickness and photoimide passivation enable high dynamic ruggedness under repetitive 600 V / 60 A stress conditions at Tvj ≤ 150 °C.
The device exhibits a typical forward voltage of 1.6 V at 30 A and 25 °C, with reverse leakage limited to 27 µA at 600 V. Its cathode-anode breakdown voltage is guaranteed ≥600 V at IR = 1.5 mA, and it is qualified per AQL 0.65 visual inspection per failure catalogue.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - maximum repetitive reverse blocking voltage, defining safe AC line or bus voltage margin in SMPS and inverter designs |
| IF | 30 A - continuous forward current rating at junction temperature < 150 °C, dependent on thermal design of module or discrete mounting |
| VF | 1.6 V @ 30 A, 25 °C - forward conduction loss baseline used to estimate conduction losses in high-efficiency topologies |
| Qrr | Low - enables soft, fast switching with reduced EMI and snubber stress in resonant LLC and phase-shifted full-bridge circuits |
| Tvj Range | –40 to +175 °C - extended junction temperature capability supports high-power density packaging and overtemperature derating |
| Die Size | 3 × 3 mm² - standard bare-die footprint enabling direct integration into power modules or custom discrete packages |
| Backside Metallization | Ni/Ag - electrically conductive, solderable and epoxy-bondable system compatible with industrial die-attach processes |
Pinout & Package
Package: Bare die (unmounted silicon chip), 3 × 3 mm², 70 µm thick, sawn on foil, with frontside AlSiCu metallization and Ni/Ag backside metallization. No leadframe or molded package - intended for module integration or discrete die bonding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode Pad (A) | Forward current entry point | 2.518 × 2.518 mm² AlSiCu surface for wire bonding or clip bonding; defines primary current path in half-bridge or freewheeling configurations |
| Cathode Backside | Forward current exit / thermal interface | Ni/Ag metallized surface serving as both electrical cathode contact and primary thermal conduction path to heatsink or DBC substrate |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled Technology | Enables precise carrier lifetime control for optimized trade-off between VF, Qrr, and softness without radiation or platinum diffusion |
| Soft Fast Switching | Reduces voltage overshoot and EMI generation during turn-off, critical for high-frequency resonant topologies above 100 kHz |
| Low Reverse Recovery Charge | Minimizes switching losses and di/dt-induced stress on complementary switches in bridge-leg configurations |
| Small Temperature Coefficient | Ensures stable Qrr and VF across –40 to +150 °C, supporting consistent performance in wide ambient and load conditions |
| Wafer-Level Qualified | Electrical parameters (VBR, IR, VF) tested on wafer; dynamic ruggedness verified by design and characterization, not production test |
Applications
| Industrial Motor Drives | Resonant LLC Converters |
|---|---|
Use Scenario: Used as freewheeling or clamp diode in IGBT-based 3-phase inverter stages driving HVAC compressors or servo motors. IC Role / Device Role / Timing Role: Power diode die providing low-loss, soft-recovery commutation path during IGBT turn-off and dead-time transitions. Use Value: Reduces switching losses and voltage spikes across IGBTs, improving efficiency and reliability at 8–20 kHz PWM frequencies. | Use Scenario: Integrated into secondary-side rectification of high-frequency LLC resonant DC-DC converters for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: High-speed output rectifier die handling 100–500 kHz sinusoidal currents with minimal reverse recovery disturbance. Use Value: Enables >96% peak efficiency by minimizing Qrr-related losses and reducing snubber component count. |
| High-Density Power Modules | Induction Heating Inverters |
Use Scenario: Embedded in compact 62 mm or HPD power modules for solar inverters and UPS systems requiring high power density. IC Role / Device Role / Timing Role: Bare die mounted directly onto DBC substrates alongside IGBTs or SiC MOSFETs for optimized thermal and parasitic inductance management. Use Value: Eliminates bond wire inductance and package thermal resistance, supporting higher current density and improved thermal cycling life. | Use Scenario: Employed as resonant tank diode in 20–100 kHz series-resonant inverters for domestic and industrial induction cooktops. IC Role / Device Role / Timing Role: Fast, soft-recovery diode die conducting high di/dt resonant currents with minimal tail current and voltage ringing. Use Value: Prevents destructive overvoltage during zero-current switching transitions, extending inverter lifetime under repeated thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching power diode die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-16N1 | 1600 V rated, larger 7.2 × 7.2 mm² die, higher VF (~2.1 V), no EC technology | Targeted at medium-voltage industrial drives; less suitable for high-frequency resonant use due to higher Qrr | Select when higher voltage margin (>1200 V) and robustness against transient overvoltage outweigh switching speed requirements |
| STMicroelectronics STTH30L06D | 600 V, TO-247 packaged discrete diode, 30 A rated, soft recovery but thicker die (~120 µm), higher Qrr | Designed for PCB-mount discrete use; lacks bare-die flexibility and thermal interface optimization of SIDC09D60F6X1SA5 | Choose for prototyping or low-volume discrete builds where module integration is not required |
Compared with MDD100-16N1 and STTH30L06D, SIDC09D60F6X1SA5 offers superior high-frequency switching performance and thermal integration capability due to its thin EC die, making it optimal for space-constrained, high-efficiency power modules-not for standalone discrete replacement or ultra-high-voltage applications.
Availability
SIDC09D60F6X1SA5 is available at Aetrix Electronics and suitable for industrial motor drives, resonant LLC converters, high-density power modules, and induction heating inverters requiring stable component supply and wafer-level traceability.
Supply support for SIDC09D60F6X1SA5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, headquartered in Munich.
SIDC09D60F6X1SA5 belongs to Infineon's high-performance silicon power diode die portfolio, engineered specifically for integration into advanced power modules and high-frequency switching applications demanding soft recovery and thermal robustness.
FAQ
What is the recommended die attach method for SIDC09D60F6X1SA5?
The die supports electrically conductive adhesive bonding or soft soldering via its Ni/Ag backside metallization. For high-reliability power modules, Ag sintering or PbSn solder is preferred to ensure low thermal resistance and mechanical stability under thermal cycling. Al wire bonding (≤250 µm) is specified for anode interconnection.
Does SIDC09D60F6X1SA5 require gate drive or control signals?
No - SIDC09D60F6X1SA5 is a passive two-terminal power diode die with no gate or control terminal. It operates solely based on forward bias polarity and current direction. Its switching behavior is intrinsic to its Emitter Controlled silicon structure and thermal design, not externally controlled.
Can this die be used in life-support equipment?
Infineon explicitly restricts use in life-support devices or systems unless approved in writing. SIDC09D60F6X1SA5 has not received such approval; its qualification covers industrial and commercial power conversion only. Designers must obtain formal written consent from Infineon before deployment in implantable or critical-care systems.
Why is dynamic ruggedness marked "tbd" in the datasheet?
Dynamic ruggedness (Pmax) is verified by design and characterization-not production-tested-due to test limitations on bare dies. The value is derived from simulation and accelerated stress testing under 600 V / 60 A conditions at Tvj ≤ 150 °C, confirming robustness against repetitive avalanche-like stress in real module environments.
SIDC09D60F6X1SA5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 30 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC09D60F6X1SA5 FAQ
1.How can I place an order for SIDC09D60F6X1SA5 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC09D60F6X1SA5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC09D60F6X1SA5 reliable?
The price and inventory of SIDC09D60F6X1SA5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC09D60F6X1SA5 is usually 5 days.
3.What payment methods are accepted for SIDC09D60F6X1SA5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC09D60F6X1SA5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC09D60F6X1SA5?
SIDC09D60F6X1SA5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC09D60F6X1SA5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC09D60F6X1SA5?
For technical support, including SIDC09D60F6X1SA5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC09D60F6X1SA5 requirements.
6.How does Aetrix verify that SIDC09D60F6X1SA5 is sourced from the original manufacturer or authorized distributors?
All SIDC09D60F6X1SA5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC09D60F6X1SA5 meets industry standards.
7.What is the process for return or replacement of SIDC09D60F6X1SA5?
All SIDC09D60F6X1SA5 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC09D60F6X1SA5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC09D60F6X1SA5 part is unused and in its original packaging.
Return procedure for SIDC09D60F6X1SA5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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