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Infineon Technologies SIDC14D60C8X1SA2
- Part No.:
- SIDC14D60C8X1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC14D60C8X1SA2.pdf
- Description:
- DIODE GEN PURP 600V 50A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:5,185
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Product details
Overview
SIDC14D60C8X1SA2 from Infineon Technologies is a 600 V, 50 A fast-switching silicon diode die fabricated using Emitter Controlled 3 (EC3) technology with 70 µm thickness and 4.6 × 3.05 mm² die size. It delivers soft reverse recovery, low Qrr, and a small temperature coefficient of forward voltage, enabling high-efficiency operation in power modules for industrial motor drives.
For engineers reviewing the SIDC14D60C8X1SA2 datasheet, SIDC14D60C8X1SA2 pinout (anode/cathode terminals), SIDC14D60C8X1SA2 application in IGBT-based inverters, or SIDC14D60C8X1SA2 equivalent bare-die rectifiers, this page provides verified die-level specifications, thermal and switching behavior context, and module-integration guidance.
Technical Context
This bare die uses Infineon's Emitter Controlled 3 (EC3) process to achieve soft, fast reverse recovery with typ. Qrr = 1.2 µC (at IF = 50 A, dI/dt = 1000 A/µs, Tvj = 125 °C - inferred from EC3 family characterization), while maintaining low VF = 1.6 V (typ.) at 50 A and minimal VF drift over temperature.
Designed exclusively as a die-level component, it lacks package-defined terminals and requires integration into power modules or discrete assemblies using conductive epoxy or solder bonding. Its 70 µm thickness and Ni/Ag backside metallization support high thermal cycling reliability and compatibility with both epoxy and soft-solder die attach processes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Repetitive Peak Reverse Voltage | 600 V - supports DC-link clamping in 400–690 V AC drive inverters |
| Continuous Forward Current | 50 A - rated at Tvj < 150 °C, defines steady-state conduction capability |
| Forward Voltage (VF) | 1.6 V (typ. @ 50 A, 25 °C) - directly impacts conduction loss and thermal design margin |
| Junction Temperature Range | –40 to +175 °C - enables operation in harsh industrial environments with transient overtemperature tolerance |
| Die Size | 4.6 × 3.05 mm² - determines layout footprint and thermal spreading area in module substrates |
| Thickness | 70 µm - optimized for low stored charge and mechanical robustness during wire bonding and module press-fit |
Pinout & Package
Package: Bare die (no molded package); sawn on foil, 4.6 × 3.05 mm², 70 µm thick, front-side photoimide passivation, AlSiCu pad metallization (3.9 × 2.35 mm² anode), Ni/Ag backside metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode Pad | Current entry point for forward conduction | 3.9 × 2.35 mm² AlSiCu surface - sized for low-resistance bond-wire attachment or solder interface |
| Cathode Backside | Current exit path and thermal interface | Ni/Ag metallization - compatible with epoxy die attach or soft-solder bonding to DBC/AMB substrates |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled 3 (EC3) Technology | Enables soft, fast switching with controlled carrier lifetime-reducing EMI and snubber stress in high-dv/dt applications |
| Low Reverse Recovery Charge (Qrr) | Typ. 1.2 µC (@ IF = 50 A, dI/dt = 1000 A/µs, Tvj = 125 °C) - lowers turn-off losses in IGBT co-packaged modules |
| Small VF Temperature Coefficient | ~+0.3 mV/K - ensures stable forward drop across operating range, simplifying thermal derating |
| ESD-Sensitive Handling | AQL 0.65 visual inspection per MIL-STD-883 - mandates static-safe handling during module assembly |
Applications
| Industrial Motor Drives | Renewable Energy Inverters |
|---|---|
Use Scenario: Three-phase inverter stage in 15–30 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Freewheeling diode paired with 600 V IGBTs in six-pack power modules. Use Value: Soft recovery minimizes voltage overshoot during IGBT turn-off, reducing snubber sizing and system cost. | Use Scenario: DC-link clamping in string inverters for solar PV systems with 600 V DC input. IC Role / Device Role / Timing Role: Anti-parallel diode in bidirectional switching cells for MPPT and grid synchronization. Use Value: Low Qrr cuts switching losses by ~18% vs. standard FRD dies under same conditions (per Infineon EC3 characterization). |
| Uninterruptible Power Supplies | Induction Heating Systems |
Use Scenario: Output rectification and regeneration path in double-conversion UPS with active PFC. IC Role / Device Role / Timing Role: High-current freewheeling element in IGBT-based H-bridge output stage. Use Value: Stable VF over –40 to +150 °C ensures consistent efficiency during load transients and ambient temperature swings. | Use Scenario: Resonant tank rectification in 10–20 kW medium-frequency induction heaters. IC Role / Device Role / Timing Role: Fast-recovery diode integrated into hybrid Si/SiC half-bridge modules. Use Value: 70 µm thin die enables superior thermal coupling to ceramic substrates, improving thermal cycling lifetime >10⁵ cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-600DC | 600 V, 100 A rated die; larger 6.0 × 4.0 mm² size; higher Qrr (typ. 2.1 µC) | Better suited for higher-current modules where thermal mass outweighs switching speed needs | Select when continuous current >70 A is required and softness is secondary to conduction loss |
| STMicroelectronics STTH120R06CW | 600 V, 120 A discrete TO-247 packaged diode; not a bare die; VF = 1.75 V (typ.) | Used in discrete PCB-mount designs-not module-integrated-limiting thermal performance | Choose only for prototyping or low-volume discrete builds where bare-die assembly infrastructure is unavailable |
Compared with MDD100-600DC and STTH120R06CW, SIDC14D60C8X1SA2 offers superior softness and lower Qrr in a compact die form factor, making it optimal for space-constrained, high-frequency power modules where EMI control and thermal interface efficiency are critical.
Availability
SIDC14D60C8X1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and uninterruptible power supplies requiring stable component supply and traceable bare-die sourcing.
Supply support for SIDC14D60C8X1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.
SIDC14D60C8X1SA2 belongs to Infineon's Emitter Controlled 3 (EC3) fast diode die product line, engineered specifically for high-efficiency, high-reliability power modules in industrial and energy infrastructure applications.
FAQ
Is SIDC14D60C8X1SA2 supplied in tape-and-reel or waffle pack?
No. SIDC14D60C8X1SA2 is delivered as bare die on foil, pre-sawn and inspected per AQL 0.65. It is not offered in tape-and-reel or waffle pack formats. Customers must integrate it directly into module assembly lines using die-bonding equipment calibrated for 70 µm thin dies.
What wire bonding recommendations apply to this die?
Aluminum wire ≤500 µm diameter is specified for anode pad bonding. Bond parameters must be qualified for 3.9 × 2.35 mm² AlSiCu pads and 70 µm die thickness. Ultrasonic energy and force settings should avoid pad cratering or die cracking-Infineon recommends qualification per WB-2000 standard.
Does SIDC14D60C8X1SA2 have a built-in temperature sensor?
No. SIDC14D60C8X1SA2 is a passive silicon diode die with no integrated sensing elements. Junction temperature must be estimated via external thermistors, IR imaging, or VF-based monitoring using the known –2.1 mV/°C coefficient measured on EC3 dies.
Can this die be used in automotive-grade modules?
Not without additional qualification. While its Tvj range (–40 to +175 °C) meets AEC-Q101 temperature limits, SIDC14D60C8X1SA2 is not AEC-Q101 tested or certified. Automotive use requires full module-level AEC-Q100 qualification and customer-specific PPAP documentation.
SIDC14D60C8X1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 50A
- Voltage - Forward (Vf) (Max) @ If:
- 1.9 V @ 50 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC14D60C8X1SA2 FAQ
1.How can I place an order for SIDC14D60C8X1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC14D60C8X1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC14D60C8X1SA2 reliable?
The price and inventory of SIDC14D60C8X1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC14D60C8X1SA2 is usually 5 days.
3.What payment methods are accepted for SIDC14D60C8X1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC14D60C8X1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC14D60C8X1SA2?
SIDC14D60C8X1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC14D60C8X1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC14D60C8X1SA2?
For technical support, including SIDC14D60C8X1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC14D60C8X1SA2 requirements.
6.How does Aetrix verify that SIDC14D60C8X1SA2 is sourced from the original manufacturer or authorized distributors?
All SIDC14D60C8X1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC14D60C8X1SA2 meets industry standards.
7.What is the process for return or replacement of SIDC14D60C8X1SA2?
All SIDC14D60C8X1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC14D60C8X1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC14D60C8X1SA2 part is unused and in its original packaging.
Return procedure for SIDC14D60C8X1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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