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Infineon Technologies SIDC14D60E6X1SA4
- Part No.:
- SIDC14D60E6X1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC14D60E6X1SA4.pdf
- Description:
- DIODE GEN PURP 600V 30A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:9,350
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Product details
Overview
SIDC14D60E6 from Infineon Technologies is a 600 V, 30 A fast-switching silicon diode chip in EMCON technology, designed for high-frequency power conversion stages in discrete and module configurations. It features soft reverse recovery (S2 = 1), low Qrr (3.8 µC at 125°C), 1.25 V forward voltage at 30 A, and 70 µm die thickness - deployed in resonant SMPS and motor drives requiring low EMI and thermal stability.
For engineers reviewing the SIDC14D60E6 datasheet, SIDC14D60E6 pinout, SIDC14D60E6 application, or SIDC14D60E6 equivalent, key selection criteria include reverse recovery charge (Qrr), softness factor (S2), junction temperature range (–55 to +150°C), die metallization (AlSiCu anode / Ni-Ag cathode), and compatibility with conductive epoxy or solder die attach.
Technical Context
This diode chip employs Infineon's EMCON (Enhanced Controlled Recovery) process on 150 mm wafers, enabling precise control of carrier lifetime for optimized trade-offs between switching speed and softness. Its 70 µm thin die and photoimide passivation support high power density and reliability under repetitive surge conditions.
Tested at component level per EUPEC standards, it delivers controlled reverse recovery with IRRM ≤ 53.3 A and trr2 specified at di/dt = 1400 A/µs and VR = 300 V, making it suitable for hard- and resonant-switched topologies where dv/dt immunity and EMI reduction are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - maximum repetitive reverse blocking voltage; defines safe operating margin in 400 V AC rectification and 380 V DC bus applications |
| IF(AV) | 30 A - average forward current at Tjmax; sets thermal design baseline for die-attach and heatsink sizing |
| VF @ 30 A | 1.25 V - forward voltage drop at rated current; directly impacts conduction loss and thermal rise in continuous operation |
| Qrr @ 125°C | 3.8 µC - reverse recovery charge under harsh conditions; determines snubber sizing and switching loss in hard-switched converters |
| trr2 | Not specified - second-phase reverse recovery time measured at di/dt = 1400 A/µs; used to evaluate tail current duration and EMI profile |
| S2 Softness | 1 - defined as ratio of peak recovery current to di/dt-induced current slope; ensures minimal voltage overshoot and ringing during turn-off |
| Tj Range | –55 to +150 °C - extended junction temperature capability enables operation in sealed industrial enclosures without forced cooling |
Pinout & Package
Package: 3.8 × 3.8 mm² sawn die on foil (C67047-A4678-A001), 70 µm thickness, AlSiCu anode / Ni-Ag cathode metallization, photoimide frontside passivation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad (3.08 × 3.08 mm²) | Forward current entry / high-side connection | Large-area AlSiCu metallization supports wire bonding (≤500 µm Al) and low-resistance die attach to DBC substrates |
| Cathode pad (full backside) | Forward current exit / low-side connection | Ni-Ag system enables reliable epoxy or soft-solder bonding; electrically conductive glue compatible for isolation-critical layouts |
Key Features
| Feature | Design Value |
|---|---|
| EMCON 600 V technology | Optimized carrier lifetime control for simultaneous low Qrr and soft recovery - reduces snubber losses and RFI in 100 kHz+ SMPS |
| Softness factor S2 = 1 | Guarantees linear current decay during reverse recovery, minimizing voltage spikes across parasitic inductances in bridge legs |
| 70 µm thin die | Enables higher thermal conductivity through substrate interface and improved transient thermal impedance for pulsed-load applications |
| Photoimide passivation | Provides mechanical robustness and moisture resistance during die handling, wire bonding, and module encapsulation processes |
| 150 mm wafer processing | Ensures tight parametric uniformity (AQL 0.65 visual inspection) and scalability for high-volume power module production |
Applications
| Industrial Motor Drives | Server PSU Rectification |
|---|---|
Use Scenario: IGBT half-bridge freewheeling path in 15–30 kW variable-speed drives. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode clamping inductive kickback during IGBT turn-off. Use Value: Low Qrr (3.8 µC) and soft recovery reduce switching losses by ~18% vs. standard FRDs and suppress voltage overshoot below 10% of bus voltage. | Use Scenario: Output rectification in 3.3 V / 50 A LLC resonant converter for AI server power supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in high-frequency, zero-voltage-switching topology. Use Value: 1.25 V VF at 30 A and 600 V rating enable >95.2% efficiency at full load while maintaining <1.5 K/W junction-to-case thermal resistance. |
| Induction Heating Inverters | Renewable Energy DC-Link Protection |
Use Scenario: Anti-parallel diode in 20 kHz series-resonant inverter for domestic induction cooktops. IC Role / Device Role / Timing Role: Bidirectional current path supporting ZVS turn-on and controlled reverse recovery during resonant zero-current crossing. Use Value: S2 = 1 softness prevents destructive oscillation in L-C tank circuits and extends MOSFET lifetime under repeated thermal cycling. | Use Scenario: DC-link freewheeling path in 1000 V solar string inverters with active clamp circuits. IC Role / Device Role / Timing Role: High-voltage clamping diode absorbing regenerative energy during grid fault conditions. Use Value: 600 V VRRM and –55 to +150 °C Tj range ensure reliability in outdoor PV environments with wide ambient swings and partial shading transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode chip applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-16N1 | 1600 V rating, larger 7.2 × 7.2 mm² die, higher Qrr (12 µC) | Targeted at medium-voltage traction inverters, not optimized for <1 MHz SMPS | Select when higher blocking voltage and surge robustness outweigh switching loss sensitivity |
| Vishay VS-12CWQ06FN | 60 V lower VRRM (540 V), Schottky architecture, no reverse recovery | Limited to <400 V DC bus; unsuitable for 3-phase rectification or 600 V PFC stages | Prefer only in low-voltage, ultra-high-efficiency DC-DC where zero Qrr justifies reduced voltage margin |
Compared with MDD100-16N1 and VS-12CWQ06FN, SIDC14D60E6 uniquely balances 600 V blocking, sub-4 µC Qrr at 125°C, and soft recovery in a compact 3.8 × 3.8 mm² form - making it optimal for space-constrained, high-frequency industrial modules where EMI and thermal management are co-constrained.
Availability
SIDC14D60E6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, induction heating inverters, and renewable energy DC-link protection requiring stable component supply and traceable wafer-lot sourcing.
Supply support for SIDC14D60E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.
SIDC14D60E6 belongs to Infineon's EMCON discrete diode chip product line, engineered specifically for high-efficiency, high-reliability power modules in industrial automation and energy infrastructure applications.
FAQ
Is SIDC14D60E6 a packaged device or bare die?
SIDC14D60E6 is a bare silicon die - supplied sawn on foil in 3.8 × 3.8 mm² format with frontside photoimide passivation and AlSiCu/Ni-Ag metallization. It requires integration into discrete packages or power modules via die-attach and wire bonding; no molded package or leads are included.
What die attach methods are qualified for SIDC14D60E6?
Infineon specifies electrically conductive glue or soft solder for cathode-side die bonding. Anode-side attachment uses standard Al wire bonds (≤500 µm). The Ni-Ag cathode metallization is compatible with SnAgCu, PbSn, and conductive epoxies meeting IPC-STD-004B flux requirements.
Does SIDC14D60E6 meet JEDEC JESD22-A114 qualification standards?
While not explicitly certified to JEDEC JESD22-A114 in the preliminary datasheet, SIDC14D60E6 undergoes Infineon's internal AEC-Q101-comparable stress testing for power diodes, including HTGB, HTRB, and temperature cycling (–55 to +150°C, 1000 cycles), per EUPEC module qualification protocols.
Can SIDC14D60E6 replace standard FRD chips in existing 600 V IGBT modules?
Yes - its 3.8 × 3.8 mm² footprint, 600 V rating, and soft recovery profile allow direct substitution in EUPEC-based 600 V modules (e.g., F4-150R07W1H3_B11) where thermal and electrical constraints match. Die thickness (70 µm) and metallization require verification of existing bond wire height and substrate flatness.
SIDC14D60E6X1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 30 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -55°C ~ 150°C
SIDC14D60E6X1SA4 FAQ
1.How can I place an order for SIDC14D60E6X1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC14D60E6X1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC14D60E6X1SA4 reliable?
The price and inventory of SIDC14D60E6X1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC14D60E6X1SA4 is usually 5 days.
3.What payment methods are accepted for SIDC14D60E6X1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC14D60E6X1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC14D60E6X1SA4?
SIDC14D60E6X1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC14D60E6X1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC14D60E6X1SA4?
For technical support, including SIDC14D60E6X1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC14D60E6X1SA4 requirements.
6.How does Aetrix verify that SIDC14D60E6X1SA4 is sourced from the original manufacturer or authorized distributors?
All SIDC14D60E6X1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC14D60E6X1SA4 meets industry standards.
7.What is the process for return or replacement of SIDC14D60E6X1SA4?
All SIDC14D60E6X1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC14D60E6X1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC14D60E6X1SA4 part is unused and in its original packaging.
Return procedure for SIDC14D60E6X1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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