Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SIDC14D60F6X1SA3

Name: SIDC14D60F6X1SA3
Brand: Infineon Technologies
SKU: SIDC14D60F6X1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIDC14D60F6X1SA3

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: Die

Datasheet:: SIDC14D60F6X1SA3.pdf

Description:: DIODE GEN PURP 600V 45A DIE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,077

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIDC14D60F6X1SA3 from Infineon Technologies is a 600 V, 45 A fast-switching silicon power diode die with emitter-controlled technology, 70 µm chip thickness, soft reverse recovery (low Q_rr), and low temperature coefficient of forward voltage. It is designed for integration into discrete devices and power modules used in high-frequency SMPS, resonant converters, and motor drives.

For engineers reviewing the SIDC14D60F6X1SA3 datasheet, SIDC14D60F6X1SA3 pinout (anode-only bare die), SIDC14D60F6X1SA3 application in resonant topologies, or SIDC14D60F6X1SA3 equivalent for high-voltage Si diode dies, this page provides verified electrical specs, thermal context, package mapping, and validated alternatives aligned to Infineon's IMM PSD documentation (Edition 2.1, 09.03.2010).

Technical Context

This bare die implements emitter-controlled (EC) technology to achieve soft, fast switching with low reverse recovery charge (Q_rr) and minimal temperature dependence of V_F. Its 70 µm thin wafer enables reduced carrier lifetime and optimized dynamic ruggedness at 600 V blocking capability.

Rated for continuous forward current up to 90 A at T_vj < 150 °C and junction temperatures from –40 °C to +175 °C, it requires module-level thermal management-switching and thermal parameters are not specified for the die alone but depend on mounting method, bond material, and heatsink interface.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - maximum repetitive reverse voltage; defines safe DC/peak AC blocking capability in bridge or freewheeling positions
I_F	45 A - rated continuous forward current at T_vj < 150 °C; base rating for thermal design under steady-state conduction
I_FRM	90 A - maximum repetitive forward current; supports short-duration overload conditions with proper thermal derating
V_F	1.6 V @ I_F = 45 A - forward voltage drop determines conduction loss and thermal load in high-current paths
T_vj Range	–40 °C to +175 °C - extended junction temperature range enables operation in harsh industrial and automotive under-hood environments
Die Size	3.8 × 3.8 mm² - standardized bare-die footprint compatible with common power module substrates and die-attach processes

Pinout & Package

Package: Bare die (unmounted silicon chip), sawn on foil, 3.8 × 3.8 mm² active area, 70 µm thickness, front-side photoimide passivation, AlSiCu metallization (3200 nm), Ni/Ag backside metallization suitable for epoxy or soft-solder die bonding.

Pin/Terminal	Circuit Role	Design Meaning
Anode pad (A)	Forward current entry point	3.08 × 3.08 mm² AlSiCu surface; primary high-current interface requiring low-resistance bond to substrate or leadframe
Cathode (backside)	Forward current exit / reverse voltage reference	Ni/Ag metallized rear surface; electrically conductive bond required for thermal and electrical path completion

Key Features

Feature	Design Value
Emitter-Controlled (EC) Technology	Enables soft, fast reverse recovery with low Q_rr, reducing EMI and snubber stress in hard-switched and resonant circuits
Low Temperature Coefficient of V_F	Stable forward voltage across –40 °C to +175 °C improves current sharing in parallel configurations and thermal runaway immunity
70 µm Thin Wafer	Optimized carrier lifetime for balanced switching speed and ruggedness; supports high-frequency operation without excessive turn-off losses
Dynamic Ruggedness Verified	Validated for 90 A I_Fmax and 600 V V_Rmax at T_vj ≤ 150 °C-ensures reliability under transient overcurrent and overvoltage conditions

Applications

High-Frequency SMPS

Resonant LLC Converters

Use Scenario: Used as secondary-side synchronous rectifier or primary-side freewheeling diode in 100–500 kHz switched-mode power supplies for telecom and server PSUs.

IC Role / Device Role / Timing Role: Fast-recovery power diode die integrated into discrete packages or hybrid modules to minimize conduction and switching losses.

Use Value: Low Q_rr and soft recovery reduce voltage overshoot and EMI, enabling smaller output filters and higher power density.

Use Scenario: Employed as clamping or resonant tank diode in LLC resonant converters for EV chargers and industrial inverters.

IC Role / Device Role / Timing Role: Bare die mounted directly onto ceramic DBC substrates to maximize thermal performance and minimize parasitic inductance.

Use Value: Stable V_F over temperature ensures predictable zero-voltage switching (ZVS) boundary and consistent efficiency across ambient conditions.

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: Integrated into 600 V IGBT half-bridge modules for HVAC compressors and pump inverters operating at 8–16 kHz PWM frequencies.

IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss current recirculation during IGBT off-time in three-phase inverter legs.

Use Value: Soft recovery prevents voltage spikes that could trigger false IGBT turn-on, improving system robustness and reducing gate driver stress.

Use Scenario: Embedded in solar string inverters and wind turbine converters where high reliability and long service life (>25 years) are required.

IC Role / Device Role / Timing Role: High-voltage, high-temperature-rated diode die supporting 600 V DC-link operation with wide thermal cycling tolerance.

Use Value: Extended T_vj range (–40 °C to +175 °C) and low V_F drift ensure stable performance across desert and arctic deployment environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Si fast diode die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS MDD140-16N1	1600 V rating, larger die (5.2 × 5.2 mm²), higher V_F (2.1 V @ 45 A), no EC structure	Targeted at medium-voltage industrial drives; less suitable for high-frequency SMPS due to slower recovery	Select only if >1200 V blocking is required and switching frequency < 50 kHz
STMicroelectronics STTH1206D	600 V, 120 A rated die, 100 µm thickness, standard PiN structure, higher Q_rr (≈2.5×)	Designed for discrete TO-247 packaging; lacks soft recovery and thermal stability of EC process	Prefer for cost-sensitive, lower-frequency applications where EMI control is less critical

Compared with MDD140-16N1 and STTH1206D, SIDC14D60F6X1SA3 delivers superior high-frequency efficiency and thermal stability due to its emitter-controlled architecture and thin 70 µm wafer-critical for resonant topologies and compact power modules where loss minimization and reliability under thermal cycling are prioritized.

Availability

SIDC14D60F6X1SA3 is available at Aetrix Electronics and suitable for high-frequency SMPS, resonant LLC converters, and industrial motor drives requiring stable component supply, traceable die-level sourcing, and long-term production continuity.

Supply support for SIDC14D60F6X1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, headquartered in Munich.

SIDC14D60F6X1SA3 belongs to Infineon's IMM PSD (Power Semiconductor Devices) bare die portfolio, engineered specifically for integration into high-efficiency, high-reliability power modules and discrete assemblies targeting industrial, renewable energy, and transportation systems.

FAQ

Is SIDC14D60F6X1SA3 supplied in a packaged form or as a bare die?

SIDC14D60F6X1SA3 is supplied exclusively as a bare silicon die-unmounted, sawn on foil, with 3.8 × 3.8 mm² active area and Ni/Ag backside metallization. It is not offered in any pre-packaged configuration (e.g., TO-220, DPAK) and requires customer-level assembly into modules or discrete housings using conductive epoxy or soft solder die bonding.

What is the significance of "Emitter Controlled technology" in this diode?

Emitter Controlled (EC) technology modifies the carrier lifetime profile near the emitter region to produce soft, controlled reverse recovery with low Q_rr and minimal voltage overshoot. Unlike standard PiN diodes, EC diodes avoid abrupt current collapse, reducing EMI generation and stress on adjacent switching devices-especially critical in high-frequency resonant and ZVS circuits.

Can SIDC14D60F6X1SA3 be used in parallel configurations?

Yes-its low and stable temperature coefficient of forward voltage (V_F) enables predictable current sharing across multiple paralleled dies. However, layout symmetry, matched bond wire lengths, and uniform thermal interface resistance are essential to prevent thermal runaway; Infineon recommends using identical mounting processes and substrate materials for all paralleled units.

Why are switching characteristics not specified in the datasheet for this part?

Switching behavior-including t_rr, Q_rr, and softness factor-is highly dependent on external factors such as module parasitics, heatsink thermal resistance, bond material, and PCB layout. As a bare die, SIDC14D60F6X1SA3's dynamic performance must be characterized in the final application environment; Infineon provides wafer-level static parameters only, per industry practice for unmounted power dies.

SIDC14D60F6X1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 45A

Voltage - Forward (Vf) (Max) @ If:: 1.6 V @ 45 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 27 µA @ 600 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

Operating Temperature - Junction:: -40°C ~ 175°C

SIDC14D60F6X1SA3 FAQ

1.How can I place an order for SIDC14D60F6X1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC14D60F6X1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC14D60F6X1SA3 reliable?

The price and inventory of SIDC14D60F6X1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC14D60F6X1SA3 is usually 5 days.

3.What payment methods are accepted for SIDC14D60F6X1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC14D60F6X1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC14D60F6X1SA3?

SIDC14D60F6X1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC14D60F6X1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC14D60F6X1SA3?

For technical support, including SIDC14D60F6X1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC14D60F6X1SA3 requirements.

6.How does Aetrix verify that SIDC14D60F6X1SA3 is sourced from the original manufacturer or authorized distributors?

All SIDC14D60F6X1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC14D60F6X1SA3 meets industry standards.

7.What is the process for return or replacement of SIDC14D60F6X1SA3?

All SIDC14D60F6X1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC14D60F6X1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC14D60F6X1SA3 part is unused and in its original packaging.

Return procedure for SIDC14D60F6X1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…