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Infineon Technologies SIDC14D60F6X1SA4
- Part No.:
- SIDC14D60F6X1SA4
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC14D60F6X1SA4.pdf
- Description:
- DIODE GEN PURP 600V 45A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:8,833
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Product details
Overview
SIDC14D60F6X1SA4 from Infineon Technologies is a 600 V, 45 A fast-switching silicon power diode die fabricated using Emitter Controlled technology with a 70 µm chip thickness and soft reverse recovery behavior. It delivers low reverse recovery charge (Qrr) and a small temperature coefficient of forward voltage, making it suitable for high-frequency resonant converters and IGBT co-packaged power modules in industrial motor drives.
For engineers reviewing the SIDC14D60F6X1SA4 datasheet, SIDC14D60F6X1SA4 pinout (anode/cathode terminals), SIDC14D60F6X1SA4 application in SMPS and resonant topologies, or SIDC14D60F6X1SA4 equivalent bare-die diodes, this page provides verified die-level specifications, thermal and switching behavior context, package interface details, and validated alternatives for module integration.
Technical Context
This bare die uses Infineon's Emitter Controlled (EC) technology to achieve soft, fast reverse recovery with low Qrr (typ. < 1.5 µC at IF = 45 A, dI/dt = 100 A/µs) and stable VF across temperature (±0.3 mV/K). The 3.8 × 3.8 mm² chip integrates a photoimide passivation layer and AlSiCu front-side metallization.
Designed for direct die-attach in press-pack or solder-bonded power modules, its 70 µm thickness enables low thermal resistance when mounted on DBC substrates. Backside Ni/Ag metallization supports both epoxy and soft-solder bonding, with electrical conductivity verified under 90 A continuous forward current at Tvj ≤ 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - Maximum repetitive reverse blocking voltage; defines safe operation in 400–600 V DC-link applications. |
| IF | 45 A - Rated continuous forward current at Tvj < 150 °C; used for thermal design of module baseplate and heatsink. |
| VF | 1.6 V @ 45 A - Forward voltage drop directly impacts conduction loss and efficiency in hard- and soft-switched topologies. |
| Qrr | Low - Confirmed soft recovery with minimal tail current; reduces EMI and switching losses in ZVS/ZCS circuits. |
| Tvj Range | −40 to +175 °C - Extended junction temperature capability supports high-power density packaging and overtemperature margin. |
| Die Size | 3.8 × 3.8 mm² - Standard footprint compatible with automated die attach and wire bonding in 62 mm and 1200 V half-bridge modules. |
Pinout & Package
Package: Bare die (unencapsulated silicon chip) with anode pad (3.08 × 3.08 mm²) on front side and Ni/Ag backside metallization. No leadframe or molded body - intended for direct die attachment in power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode Pad (front) | Forward current entry point | AlSiCu metallized surface sized for 250 µm Al wire bonding or solder attach; electrically connects to module emitter/DC− node. |
| Backside (cathode) | Forward current exit / reverse blocking terminal | Ni/Ag layer enables low-resistance, thermally robust solder or conductive epoxy bond to DBC substrate cathode/DC+ side. |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EC) structure | Enables soft reverse recovery without snubbers, reducing system EMI filter size and cost in resonant LLC converters. |
| 70 µm thin die | Improves thermal coupling to substrate and lowers transient thermal impedance (ZthJC), critical for short-circuit ruggedness in IGBT co-packages. |
| Photoimide passivation | Provides reliable edge termination and moisture resistance during module potting or high-humidity operation up to 85 % RH. |
| Low VF tempco | ±0.3 mV/K ensures stable current sharing in parallel-connected dies without active balancing circuitry. |
Applications
| Industrial Motor Drives | Resonant LLC Converters |
|---|---|
Use Scenario: Used as freewheeling or anti-parallel diode in 15–75 kW 3-phase inverter modules driving PMSM/induction motors. IC Role / Device Role / Timing Role: Anti-parallel diode paired with 650 V IGBTs; conducts reactive energy during PWM dead-time and regenerative braking. Use Value: Soft recovery minimizes voltage overshoot across IGBTs during turn-off, enabling higher switching frequencies without increased snubber losses. | Use Scenario: Integrated into 3.3–12 kW server PSU half-bridge modules operating at 200–500 kHz. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement; handles high di/dt during zero-voltage switching transitions. Use Value: Low Qrr reduces turn-on loss in primary-side switches and improves light-load efficiency by >1.2 % compared to standard FRDs. |
| Induction Heating Systems | UPS Inverter Stages |
Use Scenario: Mounted in press-pack stacks for 10–30 kW medium-frequency (20–100 kHz) series-resonant inverters. IC Role / Device Role / Timing Role: Main freewheeling path during resonant current reversal; sustains high peak currents (>120 A) with minimal thermal runaway risk. Use Value: Stable VF vs. temperature prevents current hogging in multi-die parallel configurations under thermal stress. | Use Scenario: Embedded in 10–40 kVA double-conversion UPS inverter modules requiring high reliability and 15-year service life. IC Role / Device Role / Timing Role: DC-link clamping and regeneration path during grid-to-battery transfer; operates continuously at 85 °C ambient. Use Value: −40 to +175 °C Tvj rating allows derating headroom for extended lifetime under sustained overload conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD150-12N1 | 1200 V rated, larger die (5.2 × 5.2 mm²), higher Qrr (2.8 µC), thicker (120 µm) | Targeted at 1200 V systems; less suitable for compact 600 V modules due to size and thermal inertia | Select only if higher voltage blocking or legacy 1200 V platform reuse is required. |
| STMicroelectronics STTH120R06DJ | 600 V, 120 A rated, TO-247 packaged discrete; not a bare die; VF = 1.75 V @ 60 A | Used in PCB-mounted designs; lacks module integration flexibility and thermal performance of die form factor | Choose only for prototyping or low-volume board-level builds where module assembly is unavailable. |
Compared with MDD150-12N1 and STTH120R06DJ, SIDC14D60F6X1SA4 offers optimal trade-offs for space-constrained, high-frequency 600 V power modules-delivering lower Qrr, thinner profile, and direct die-attach compatibility unmatched by packaged alternatives or higher-voltage dies.
Availability
SIDC14D60F6X1SA4 is available at Aetrix Electronics and suitable for industrial motor drives, resonant LLC converters, induction heating systems, and UPS inverter stages requiring stable component supply and traceable wafer-lot sourcing.
Supply support for SIDC14D60F6X1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.
SIDC14D60F6X1SA4 belongs to Infineon's High-Speed Diode Die product line, engineered specifically for integration into high-efficiency, high-power-density power modules used in resonant and hard-switched converter topologies.
FAQ
Is SIDC14D60F6X1SA4 supplied in tape-and-reel or waffle pack?
No - SIDC14D60F6X1SA4 is delivered as loose bare dies in nitrogen-purged, light-blocking containers. Each lot includes wafer map documentation and visual inspection AQL 0.65 reports per Infineon's L4174M specification. Custom carrier trays or gel packs are available upon request for automated die placement.
What wire bonding parameters are recommended for this die?
Al wire ≤ 250 µm diameter is specified. Recommended bond parameters: ultrasonic power 80–100 mW, bond force 45–60 g, and bond temperature 150–175 °C. Wire loop height must remain below 120 µm to avoid interference with adjacent dies in multi-chip modules.
Can this die be soldered directly to copper baseplates?
Yes - the Ni/Ag backside metallization is qualified for soft-solder bonding (SnAgCu or SnPb) to oxygen-free copper or DBC substrates. Pre-tinning of the baseplate and controlled ramp/soak profiles (peak 235–245 °C) are required to prevent die cracking or intermetallic voiding.
Does SIDC14D60F6X1SA4 have avalanche rating?
No - SIDC14D60F6X1SA4 is not rated for repetitive avalanche operation. Its ruggedness is validated under dynamic conditions (IFmax = 90 A, VRmax = 600 V) per design characterization, but no guaranteed single-pulse avalanche energy (EAS) is specified or tested in production.
SIDC14D60F6X1SA4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 45A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 45 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC14D60F6X1SA4 FAQ
1.How can I place an order for SIDC14D60F6X1SA4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC14D60F6X1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC14D60F6X1SA4 reliable?
The price and inventory of SIDC14D60F6X1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC14D60F6X1SA4 is usually 5 days.
3.What payment methods are accepted for SIDC14D60F6X1SA4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC14D60F6X1SA4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC14D60F6X1SA4?
SIDC14D60F6X1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC14D60F6X1SA4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC14D60F6X1SA4?
For technical support, including SIDC14D60F6X1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC14D60F6X1SA4 requirements.
6.How does Aetrix verify that SIDC14D60F6X1SA4 is sourced from the original manufacturer or authorized distributors?
All SIDC14D60F6X1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC14D60F6X1SA4 meets industry standards.
7.What is the process for return or replacement of SIDC14D60F6X1SA4?
All SIDC14D60F6X1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC14D60F6X1SA4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC14D60F6X1SA4 part is unused and in its original packaging.
Return procedure for SIDC14D60F6X1SA4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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