Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SIDC23D60E6X1SA1

Name: SIDC23D60E6X1SA1
Brand: Infineon Technologies
SKU: SIDC23D60E6X1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIDC23D60E6X1SA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: Die

Datasheet:: SIDC23D60E6X1SA1.pdf

Description:: DIODE GEN PURP 600V 50A DIE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,584

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIDC23D60E6 from Infineon Technologies is a 600 V, 50 A fast-switching silicon power diode chip fabricated using EMCON technology on a 70 µm-thick die (3.5 × 6.5 mm² active area). It delivers soft reverse recovery, low Q_rr (3.6 µC typ. at 25°C), and stable thermal performance for high-frequency switching in resonant converters and motor drives.

For engineers reviewing the SIDC23D60E6 datasheet, SIDC23D60E6 pinout, SIDC23D60E6 application, or SIDC23D60E6 equivalent, key selection criteria include reverse recovery charge (Q_rr), softness factor (S2 = 1), peak recovery current (I_RRM2 = 85.2 A), junction temperature range (–55 to +150°C), and die metallization compatibility with epoxy/soft solder die bonding.

Technical Context

This discrete diode chip operates as an uncontrolled, two-terminal power rectifier with no gate control. Its EMCON process enables precise dopant profiling for reduced carrier lifetime, resulting in fast yet soft turn-off behavior critical for minimizing EMI in ZVS/ZCS topologies.

Dynamic performance is characterized at 50 A forward current with 2900 A/µs di/dt and 300 V reverse voltage, yielding t_rr2 and Q_rr2 values of 5.9 µC at 125°C - confirming stable recovery under elevated thermal stress typical in industrial drive inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
VRRM	600 V - Maximum repetitive reverse blocking voltage; defines safe operating margin in 400 V DC-link SMPS and 3-phase 400 VAC input drives.
IF(AV)	50 A - Average forward current rating at Tjmax; supports continuous conduction mode operation in 3–5 kW power stages.
Qrr	3.6 µC (typ. @ 25°C) - Low reverse recovery charge reduces switching losses and snubber stress in high-frequency resonant LLC converters.
t rr2	Not specified - Recovery time measured under defined di/dt and VR conditions; softness (S2 = 1) ensures predictable turn-off waveform shape.
VF	1.25 V @ 50 A, 25°C - Forward voltage drop directly impacts conduction loss and thermal design in high-current freewheeling paths.
Tj Range	–55 to +150°C - Wide junction temperature range enables use in sealed industrial enclosures without forced cooling.
Die Size	3.5 × 6.5 mm² (16.5 mm² active) - Standard die footprint compatible with EUPEC module assembly and discrete press-pack mounting.

Pinout & Package

As a bare die, SIDC23D60E6 has no leadframe or molded package. It features an aluminum-silicon-copper (AlSiCu) anode metallization (2.78 × 5.78 mm²) and nickel-silver cathode metallization, designed for conductive epoxy or solder die attachment onto DBC substrates or copper bases.

Pin/Terminal	Circuit Role	Design Meaning
Anode Pad	Forward current entry / P-side connection	Large-area AlSiCu pad (2.78 × 5.78 mm²) optimized for low-resistance, thermally robust bond to heatsink or substrate.
Cathode Pad	Forward current exit / N-side connection	NiAg metallization provides reliable wire-bondability (Al wires ≤500 µm) and compatibility with soft-solder die attach.

Key Features

Feature	Design Value
EMCON Technology	70 µm thin die with tailored carrier lifetime enables fast, soft switching without external snubbers in hard-switched IGBT modules.
Low Qrr	3.6 µC typ. at 25°C - reduces turn-off loss by >30% vs. standard FRD dies in 100 kHz+ resonant converters.
Soft Recovery	S2 = 1 - near-ideal softness factor ensures minimal voltage overshoot and EMI during di/dt transients.
Thermal Stability	Reverse leakage <27 µA at 600 V, 25°C and stable VF drift - maintains efficiency across –40°C to +125°C ambient.

Applications

High-Frequency Resonant Converters

Industrial Motor Drives

Use Scenario: Used as secondary-side synchronous rectifier or resonant tank diode in 200–500 kHz LLC converters for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Uncontrolled power rectifier with soft recovery enabling zero-voltage switching (ZVS) boundary detection and reduced ringing.

Use Value: Q_rr ≤ 5.9 µC at 125°C ensures consistent dead-time optimization and <150 mV output voltage overshoot during light-load transitions.

Use Scenario: Freewheeling diode in 3-phase IGBT-based VFDs for HVAC compressors and pump inverters (3–11 kW).

IC Role / Device Role / Timing Role: Clamping and energy recirculation path during IGBT turn-off; handles repetitive 50 A forward current with 150 A surge capability.

Use Value: Stable VF (1.25 V @ 50 A) and low thermal resistance enable direct die-attach to ceramic DBC without thermal interface material.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Boost PFC stage output diode in 3 kW online UPS systems with 16 kHz switching and high line-voltage transients.

IC Role / Device Role / Timing Role: High-reliability rectifier handling 50 A average current and 150 A non-repetitive surges during battery backup transitions.

Use Value: 600 V VRRM and <27 µA IR at 25°C ensure long-term reliability under sustained overvoltage stress and humidity exposure.

Use Scenario: Inverter bridge anti-parallel diode in 20–100 kHz solid-state induction heating generators for metal forging and brazing.

IC Role / Device Role / Timing Role: Bidirectional current path during resonant half-cycle reversal; must sustain 2900 A/µs di/dt without snap-off.

Use Value: Softness factor S2 = 1 prevents destructive voltage spikes during rapid current reversal, eliminating need for RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-recovery diode chip applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS MDD50-16N1	600 V, 50 A discrete TO-247 packaged diode; higher VF (1.45 V), larger Qrr (7.2 µC), no softness spec.	Requires heatsinking and PCB layout for leaded package; not suitable for module integration.	Select when board-level assembly and serviceability outweigh module integration needs.
STMicroelectronics STTH60R06DY	600 V, 60 A surface-mount diode; VF = 1.35 V, Qrr = 4.8 µC, softness not characterized.	Designed for SMD reflow; lacks die-level metallization specs for direct substrate bonding.	Prefer for compact AC-DC adapters where automated placement and reflow compatibility are mandatory.

Compared with MDD50-16N1 and STTH60R06DY, SIDC23D60E6 offers superior softness (S2 = 1), lower Qrr, and bare-die form factor - making it uniquely suited for high-density power module integration and ultra-low-EMI resonant designs where thermal and electrical parasitics must be minimized.

Availability

SIDC23D60E6 is available at Aetrix Electronics and suitable for high-frequency resonant converters, industrial motor drives, and uninterruptible power supplies requiring stable component supply and traceable wafer-lot sourcing.

Supply support for SIDC23D60E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

SIDC23D60E6 belongs to Infineon's EUPEC discrete diode chip portfolio, engineered specifically for integration into high-efficiency, high-reliability power modules used in industrial drives and renewable energy inverters.

FAQ

Is SIDC23D60E6 a packaged device or a bare die?

SIDC23D60E6 is a bare silicon die - not a packaged component. It measures 3.5 × 6.5 mm² with frontside photoimide passivation, AlSiCu anode, and NiAg cathode metallization. It requires die-attach via conductive epoxy or solder onto DBC substrates or copper bases before wire bonding.

What does "EMCON technology" mean for this diode?

EMCON (Emitter-Controlled) is Infineon's proprietary epitaxial process that precisely controls carrier lifetime through dopant engineering. For SIDC23D60E6, it yields fast, soft reverse recovery with low Qrr and stable VF across temperature - critical for EMI-sensitive resonant topologies.

Can SIDC23D60E6 replace standard FRDs in existing IGBT modules?

Yes - provided mechanical footprint (3.5 × 6.5 mm²), metallization compatibility (Al wire bond, NiAg cathode), and thermal interface match. Its softness (S2 = 1) and low Qrr reduce snubber stress, but thermal modeling must confirm junction temperature rise under target I_F and switching frequency.

What is the maximum allowable di/dt during reverse recovery?

The datasheet specifies dynamic testing at di/dt = 2900 A/µs under IF = 50 A, VR = 300 V, and Tj = 125°C. This value reflects the validated operational limit for controlled soft recovery; exceeding it risks snap-off and voltage overshoot, especially at elevated temperatures.

SIDC23D60E6X1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 50A

Voltage - Forward (Vf) (Max) @ If:: 1.25 V @ 50 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 27 µA @ 600 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

Operating Temperature - Junction:: -55°C ~ 150°C

SIDC23D60E6X1SA1 FAQ

1.How can I place an order for SIDC23D60E6X1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC23D60E6X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC23D60E6X1SA1 reliable?

The price and inventory of SIDC23D60E6X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC23D60E6X1SA1 is usually 5 days.

3.What payment methods are accepted for SIDC23D60E6X1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC23D60E6X1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC23D60E6X1SA1?

SIDC23D60E6X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC23D60E6X1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC23D60E6X1SA1?

For technical support, including SIDC23D60E6X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC23D60E6X1SA1 requirements.

6.How does Aetrix verify that SIDC23D60E6X1SA1 is sourced from the original manufacturer or authorized distributors?

All SIDC23D60E6X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC23D60E6X1SA1 meets industry standards.

7.What is the process for return or replacement of SIDC23D60E6X1SA1?

All SIDC23D60E6X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC23D60E6X1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC23D60E6X1SA1 part is unused and in its original packaging.

Return procedure for SIDC23D60E6X1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…