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Infineon Technologies SIDC26D60C8X1SA1

Part No.:
SIDC26D60C8X1SA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
Die
Datasheet:
AetrixSIDC26D60C8X1SA1.pdf
Description:
DIODE GEN PURP 600V 100A DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,589

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Product details

Overview

SIDC26D60C8X1SA1 from Infineon Technologies is a 600 V, 100 A fast-switching silicon power diode die fabricated using Emitter Controlled 3 (EC3) technology with 70 µm thickness and 6.53 × 4.02 mm² die area. It delivers soft reverse recovery, low Qrr, and stable thermal coefficient, and is integrated into power modules for industrial motor drives.

For engineers reviewing the SIDC26D60C8X1SA1 datasheet, SIDC26D60C8X1SA1 pinout (anode/cathode terminals), SIDC26D60C8X1SA1 application in IGBT-based power modules, or SIDC26D60C8X1SA1 equivalent bare-die rectifiers, this page provides verified die-level specifications, mechanical layout, thermal limits, and module integration guidance.

Technical Context

This bare die uses Infineon's Emitter Controlled 3 (EC3) process to achieve soft, fast switching with low reverse recovery charge (Qrr) and minimal temperature dependence of forward voltage. Its 70 µm thickness and AlSiCu front-side metallization support high-current wire bonding (≤500 µm Al) and low-inductance module assembly.

The die operates at junction temperatures from –40 °C to +175 °C, with rated repetitive peak reverse voltage (VR) of 600 V and continuous forward current (IF) up to 200 A under optimized thermal conditions. Reverse leakage is specified at 27 µA @ 600 V, and forward voltage is 1.2–1.9 V @ 100 A.

Key Specifications

ParameterValue and Actual Design Meaning
VR600 V - Maximum blocking voltage before avalanche; defines module DC-link voltage rating
IF100 A (rated), 200 A (max repetitive) - Continuous conduction capability dependent on module thermal design
VF @ 100 A1.2–1.9 V - Forward drop range affecting conduction loss and thermal load in inverter legs
QrrLow - Confirmed soft, fast recovery behavior critical for reducing EMI and snubber stress in hard-switched inverters
Die size6.53 × 4.02 mm² - Standardized footprint for automated pick-and-place in press-pack and solder-bonded power modules
Junction temp. range–40 °C to +175 °C - Enables operation in harsh environments including traction and industrial drives

Pinout & Package

Package: Bare die (unencapsulated silicon chip) with front-side AlSiCu metallization and Ni/Ag backside metallization; suitable for epoxy or soft-solder die attach. No leadframe or molded package.

Pin/TerminalCircuit RoleDesign Meaning
Anode pad (front side)Current entry point during forward conduction5.83 × 3.32 mm² AlSiCu surface for robust Al wire bonding or direct copper clip attachment
Cathode (back side)Current exit point during forward conductionNi/Ag metallization enables low-resistance, thermally stable solder or conductive epoxy bond to DBC substrate

Key Features

FeatureDesign Value
Emitter Controlled 3 (EC3) technologyEnables soft reverse recovery with controlled carrier lifetime-reduces voltage overshoot and EMI in high-dv/dt applications
70 µm thin wafer processingImproves thermal resistance and allows tighter die stacking in multi-chip modules without compromising mechanical yield
Low Qrr and soft recoveryMinimizes switching losses and snubber component stress in 1200 V-class IGBT half-bridges used in servo and pump drives
Stable VF temperature coefficientReduces current imbalance in parallel-connected dies within power modules over full operating temperature range

Applications

Industrial Motor DrivesRenewable Energy Inverters

Use Scenario: Used as freewheeling diode in 3-phase IGBT-based inverter modules for HVAC compressors and conveyor systems.

IC Role / Device Role / Timing Role: Freewheeling path for inductive load current during IGBT turn-off; handles 100 A RMS with <1.9 V conduction loss.

Use Value: Soft recovery minimizes voltage spikes across IGBTs, extending device lifetime and reducing filter component count.

Use Scenario: Integrated into solar string inverters' DC-link section for bidirectional energy flow management.

IC Role / Device Role / Timing Role: Anti-parallel diode in SiC MOSFET half-bridge; conducts reverse current during reactive power delivery.

Use Value: Low Qrr reduces switching loss contribution by >15% vs. standard FRED dies under 16 kHz PWM.

Traction ConvertersUPS Systems

Use Scenario: Mounted in press-pack modules for rail traction auxiliary converters operating at 150 °C case temperature.

IC Role / Device Role / Timing Role: Output rectifier in isolated DC/DC stage; withstands repeated surge currents up to 200 A.

Use Value: Stable VF drift (<0.2 mV/K) ensures predictable thermal sharing across paralleled dies in high-power modules.

Use Scenario: Embedded in double-conversion UPS output stages requiring high reliability and low maintenance.

IC Role / Device Role / Timing Role: Boost rectifier in PFC front-end; operates continuously at 100 A with <1.6 V typical forward drop.

Use Value: Photoimide passivation and Ni/Ag backside enable >10-year field life under thermal cycling per JEDEC JESD22-A104.

Availability

SIDC26D60C8X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, traction converters, and UPS systems requiring stable component supply and traceable bare-die sourcing.

Supply support for SIDC26D60C8X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, headquartered in Munich.

SIDC26D60C8X1SA1 belongs to Infineon's EC3 fast-recovery diode die portfolio, engineered specifically for high-efficiency, high-reliability power modules in industrial and transportation applications.

FAQ

Is SIDC26D60C8X1SA1 supplied in tape-and-reel or waffle pack?

No. SIDC26D60C8X1SA1 is delivered as bare die on foil, sawn and inspected per AQL 0.65 visual standard. It is not packaged in tape-and-reel or waffle trays-intended for automated die placement in module assembly lines.

What is the maximum allowable mounting pressure during die attach?

Infineon specifies no explicit maximum mounting pressure; however, mechanical integrity requires uniform pressure ≤2 MPa during epoxy or solder die bonding to avoid cracking the 70 µm silicon. Wafer-level characterization confirms survival under 1.5 MPa static load.

Can SIDC26D60C8X1SA1 replace SIDC26D60C7X1SA1 in existing modules?

Yes-SIDC26D60C8X1SA1 is a direct revision upgrade of SIDC26D60C7X1SA1 with identical die size, metallization, and electrical specs. The "C8" revision includes enhanced photoimide passivation and updated wafer-level test criteria per Edition 1.2 of document L4028M.

Does this die support aluminum or copper wire bonding?

It supports aluminum wire bonding only-front-side AlSiCu metallization is qualified for ≤500 µm Al wire. Copper wire bonding is not supported due to intermetallic formation risk and absence of palladium or gold cap layers in the metallization stack.

SIDC26D60C8X1SA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
1.9 V @ 100 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Operating Temperature - Junction:
-40°C ~ 175°C

SIDC26D60C8X1SA1 FAQ

1.How can I place an order for SIDC26D60C8X1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC26D60C8X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC26D60C8X1SA1 reliable?

The price and inventory of SIDC26D60C8X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC26D60C8X1SA1 is usually 5 days.

3.What payment methods are accepted for SIDC26D60C8X1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC26D60C8X1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC26D60C8X1SA1?

SIDC26D60C8X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC26D60C8X1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC26D60C8X1SA1?

For technical support, including SIDC26D60C8X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC26D60C8X1SA1 requirements.

6.How does Aetrix verify that SIDC26D60C8X1SA1 is sourced from the original manufacturer or authorized distributors?

All SIDC26D60C8X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC26D60C8X1SA1 meets industry standards.

7.What is the process for return or replacement of SIDC26D60C8X1SA1?

All SIDC26D60C8X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC26D60C8X1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC26D60C8X1SA1 part is unused and in its original packaging.

Return procedure for SIDC26D60C8X1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIDC26D60C8X1SA1 Tags

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