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Infineon Technologies SIDC38D60C8X1SA1
- Part No.:
- SIDC38D60C8X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC38D60C8X1SA1.pdf
- Description:
- DIODE GEN PURP 600V 150A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:4,331
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Product details
Overview
SIDC38D60C8X1SA1 from Infineon Technologies is a 600 V, 150 A fast-switching silicon power diode die fabricated using Emitter Controlled 3 (EC3) technology with 70 µm thickness and 4.9 × 7.8 mm² chip area. It delivers soft reverse recovery, low Qrr, and stable thermal coefficient, and is designed for integration into high-power IGBT modules used in industrial motor drives.
For engineers reviewing the SIDC38D60C8X1SA1 datasheet, SIDC38D60C8X1SA1 pinout (anode/cathode terminals), SIDC38D60C8X1SA1 application in power modules, or SIDC38D60C8X1SA1 equivalent bare-die diodes, this page provides verified die-level specifications, mechanical layout, thermal ruggedness context, and module-integration guidance - not generic diode catalog data.
Technical Context
This bare die implements Infineon's Emitter Controlled 3 (EC3) process, enabling soft, fast switching with low reverse recovery charge (Qrr) and minimal temperature dependence of forward voltage. Its 70 µm thickness and AlSiCu front-side metallization support high-current wire bonding (≤500 µm Al) and low-inductance module assembly.
The die operates at junction temperatures up to +150 °C continuously (–40 to +175 °C range), with rated repetitive peak reverse voltage (VR) of 600 V and typical forward voltage (VF) of 1.6 V at 150 A. Dynamic ruggedness is design-verified under 300 A / 600 V stress conditions but not production-tested.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR | 600 V - Maximum blocking voltage in repetitive mode; defines use in 600 V-class power converters and inverters. |
| IF | 150 A - Continuous forward current rating at Tvj < 150 °C; sets minimum heatsink and thermal interface requirements. |
| VF @ 150 A | 1.2–1.9 V (typ. 1.6 V) - Forward conduction loss window; directly impacts conduction efficiency and thermal design margin. |
| Qrr | Low - Confirmed via EC3 process; reduces switching losses and EMI in hard-commutated IGBT modules. |
| Chip size | 4.9 × 7.8 mm² - Mechanical footprint for module substrate layout and die attach area planning. |
| Thickness | 70 µm - Enables high current density and low saturation voltage while maintaining mechanical robustness for sawn-on-foil handling. |
| Tvj range | –40 to +175 °C - Full operational junction temperature envelope; supports harsh industrial environments. |
Pinout & Package
Package: Bare die (unencapsulated silicon chip), sawn on foil, with front-side AlSiCu metallization and Ni/Ag backside metallization. Not housed in leaded or surface-mount package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad | Forward current entry terminal | 4.28 × 7.18 mm² AlSiCu area; designed for conductive epoxy or solder die attach and high-current Al wire bonding (≤500 µm). |
| Cathode side | Forward current exit / reverse blocking terminal | Backside Ni/Ag metallization; compatible with both epoxy and soft-solder die bonding in press-pack or soldered-module configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled 3 (EC3) technology | Enables soft reverse recovery and low Qrr without snubbers, reducing system EMI and stress on co-packaged IGBTs. |
| 70 µm thin die | Optimizes trade-off between on-state voltage, thermal resistance, and mechanical yield during module assembly and pressure contact. |
| Photoimide passivation | Front-side protection against moisture and contamination during module processing and long-term operation. |
| Ni/Ag back metallization | Enables reliable die bonding using either soft solder (e.g., PbSn) or conductive epoxies in high-reliability power modules. |
| ESD-sensitive classification | Complies with MIL-STD-883; requires handling per electrostatic discharge control protocols during module manufacturing. |
Applications
| Industrial Motor Drives | Renewable Energy Inverters |
|---|---|
Use Scenario: Integrated as freewheeling diode in 600 V IGBT-based three-phase inverter modules for HVAC compressors and pump drives. IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss, soft-recovery current path during IGBT turn-off commutation. Use Value: Reduces voltage overshoot and switching losses by 15–20% compared to standard fast recovery diodes in same module footprint. | Use Scenario: Used in string-level solar inverters requiring high reliability under wide ambient temperature swings (–25 to +60 °C). IC Role / Device Role / Timing Role: Anti-parallel diode in bidirectional DC-link chopper stage for MPPT and grid synchronization. Use Value: Stable VF temperature coefficient ensures consistent conduction loss across operating range, improving thermal management predictability. |
| Industrial UPS Systems | Traction Inverters (Auxiliary) |
Use Scenario: Mounted in press-pack configuration within double-sided cooling modules for online UPS rectifier/inverter stages. IC Role / Device Role / Timing Role: Output rectifier diode handling 300 A peak surge currents during battery backup transitions. Use Value: Verified dynamic ruggedness at 300 A / 600 V enables reliable operation during transient overload without parameter drift. | Use Scenario: Embedded in auxiliary traction inverter modules for rail vehicle HVAC and lighting systems (non-propulsion). IC Role / Device Role / Timing Role: Clamping diode in regenerative braking energy recirculation path. Use Value: Low Qrr minimizes heat generation during frequent PWM switching cycles, extending module service life under cyclic load. |
Availability
SIDC38D60C8X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and uninterruptible power supply (UPS) systems requiring stable component supply, traceable wafer-lot sourcing, and long-term module production continuity.
Supply support for SIDC38D60C8X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.
SIDC38D60C8X1SA1 belongs to Infineon's high-voltage power diode die portfolio, engineered specifically for integration into press-pack and soldered power modules targeting high-efficiency, high-reliability industrial drive and energy conversion systems.
FAQ
What is the recommended die attach method for SIDC38D60C8X1SA1?
Infineon specifies compatibility with both electrically conductive epoxy and soft-solder (e.g., PbSn) die attach. The Ni/Ag backside metallization ensures strong interfacial adhesion and low thermal resistance in either process. For high-power modules, solder attach is preferred to minimize long-term delamination risk under thermal cycling.
Does SIDC38D60C8X1SA1 require gate driving or external control signals?
No. SIDC38D60C8X1SA1 is a passive two-terminal power diode die with no gate or control terminals. It operates solely based on applied anode-cathode voltage polarity and magnitude, functioning as a unidirectional current conductor with soft reverse recovery characteristics.
Can SIDC38D60C8X1SA1 be used in parallel configurations within a single module?
Yes - its tight VF distribution (1.2–1.9 V at 150 A) and low temperature coefficient enable effective current sharing when multiple dies are mounted on a common substrate with matched thermal paths and symmetric bond wire layouts.
Is there a fully packaged version of this die available from Infineon?
No - SIDC38D60C8X1SA1 is exclusively offered as a bare die. Infineon does not provide a pre-packaged discrete part for this specific EC3 die; it is intended only for OEM integration into custom or standard power modules (e.g., SEMiX, PrimePACK, or customer-specific designs).
SIDC38D60C8X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 150A
- Voltage - Forward (Vf) (Max) @ If:
- 1.9 V @ 150 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Operating Temperature - Junction:
- -40°C ~ 150°C
SIDC38D60C8X1SA1 FAQ
1.How can I place an order for SIDC38D60C8X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC38D60C8X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC38D60C8X1SA1 reliable?
The price and inventory of SIDC38D60C8X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC38D60C8X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC38D60C8X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC38D60C8X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC38D60C8X1SA1?
SIDC38D60C8X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC38D60C8X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC38D60C8X1SA1?
For technical support, including SIDC38D60C8X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC38D60C8X1SA1 requirements.
6.How does Aetrix verify that SIDC38D60C8X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC38D60C8X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC38D60C8X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC38D60C8X1SA1?
All SIDC38D60C8X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC38D60C8X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC38D60C8X1SA1 part is unused and in its original packaging.
Return procedure for SIDC38D60C8X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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