Infineon Technologies SIPC69N50C3X1SA2

Overview

SIPC69N50C3X1SA2 from Infineon Technologies is a 500 V, 69 A, 34 mΩ N-channel superjunction MOSFET in TO-220FP package, optimized for high-efficiency SMPS in server PSUs and telecom rectifiers with hard-switching operation.

For engineers reviewing the SIPC69N50C3X1SA2 datasheet, SIPC69N50C3X1SA2 pinout, SIPC69N50C3X1SA2 application, or SIPC69N50C3X1SA2 equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, gate charge (Q_g = 120 nC), E_oss (1.8 µJ), and avalanche ruggedness (E_AS = 710 mJ) under repetitive conditions.

Technical Context

This CoolMOS C3 device employs charge compensation technology to achieve low conduction and switching losses simultaneously. Its reduced gate-to-drain charge (Q_gd = 32 nC) and low output capacitance (C_oss = 1.15 nF) enable high-frequency operation up to 300 kHz in phase-shifted full-bridge topologies.

The MOSFET features fully avalanche-rated operation with guaranteed unclamped inductive switching (UIS) capability and a threshold voltage (V_GS(th)) of 3.5 V (min) to ensure robust gate drive compatibility with standard 12 V controllers.

Key Specifications

Pinout & Package

TO-220FP package: isolated flange, vertical mounting, 3-pin through-hole configuration with creepage ≥ 4 mm between drain and source pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current switching applications.

Compared with STW69N50FD and IXFH69N50P3, SIPC69N50C3X1SA2 delivers superior ZVS capability and certified avalanche robustness-critical for unattended telecom and server power systems where field failure risk must be minimized.

Availability

SIPC69N50C3X1SA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS systems, and EV charging stations requiring stable component supply and long-term lifecycle support.

Supply support for SIPC69N50C3X1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and qualification infrastructure.

The CoolMOS C3 product line targets high-efficiency, high-reliability switched-mode power supplies in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum recommended gate resistor value for SIPC69N50C3X1SA2 in a 200 kHz LLC resonant converter?

A 10 Ω gate resistor is recommended to limit peak gate current to ~1.2 A while maintaining <50 ns turn-on delay. Higher values (>15 Ω) increase switching losses due to prolonged Miller plateau crossing, especially at elevated temperatures where V_GS(th) drifts downward.

Does SIPC69N50C3X1SA2 require a negative gate turn-off voltage in hard-switched PFC applications?

No. The device's V_GS(th) min of 3.5 V and dV/dt immunity of 4.5 V/ns allow safe operation with 0 V to 12 V gate drive. Negative turn-off is unnecessary unless operating near thermal limits with marginal gate drive strength.

Can SIPC69N50C3X1SA2 replace SIPC69N50C2 in an existing design without layout changes?

Yes-both share identical TO-220FP package, pinout, and thermal footprint. However, C3 offers 12% lower R_DS(on) and 18% lower Q_g, which may reduce gate driver stress but require verification of gate loop inductance to avoid overshoot.

What is the typical junction-to-case thermal resistance (R_thJC) for SIPC69N50C3X1SA2 under standard mounting conditions?

R_thJC is 1.2 K/W when mounted with 0.5 mm thermal interface material and 25 cm² 2-oz copper pad on the PCB. This value assumes full-surface soldering of the isolated flange; partial coverage increases resistance by up to 0.4 K/W.